TWI379387B - - Google Patents

Download PDF

Info

Publication number
TWI379387B
TWI379387B TW094142400A TW94142400A TWI379387B TW I379387 B TWI379387 B TW I379387B TW 094142400 A TW094142400 A TW 094142400A TW 94142400 A TW94142400 A TW 94142400A TW I379387 B TWI379387 B TW I379387B
Authority
TW
Taiwan
Prior art keywords
rewiring
semiconductor device
external electrode
external
electrode
Prior art date
Application number
TW094142400A
Other languages
English (en)
Chinese (zh)
Other versions
TW200620574A (en
Inventor
Yuki Iwata
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200620574A publication Critical patent/TW200620574A/zh
Application granted granted Critical
Publication of TWI379387B publication Critical patent/TWI379387B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094142400A 2004-12-03 2005-12-02 Semiconductor device TW200620574A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004350882 2004-12-03

Publications (2)

Publication Number Publication Date
TW200620574A TW200620574A (en) 2006-06-16
TWI379387B true TWI379387B (enExample) 2012-12-11

Family

ID=36564981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142400A TW200620574A (en) 2004-12-03 2005-12-02 Semiconductor device

Country Status (6)

Country Link
US (1) US20090166856A1 (enExample)
JP (1) JP5039384B2 (enExample)
KR (1) KR20070088266A (enExample)
CN (2) CN101814458B (enExample)
TW (1) TW200620574A (enExample)
WO (1) WO2006059547A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102244021B (zh) * 2011-07-18 2013-05-01 江阴长电先进封装有限公司 Low-k芯片封装方法
JP2013026481A (ja) * 2011-07-22 2013-02-04 Teramikros Inc 半導体装置及び半導体装置の実装構造
US9343418B2 (en) * 2013-11-05 2016-05-17 Xilinx, Inc. Solder bump arrangements for large area analog circuitry
US10115706B2 (en) 2015-10-02 2018-10-30 Samsung Electronics Co., Ltd. Semiconductor chip including a plurality of pads
CN105575935A (zh) * 2016-02-25 2016-05-11 中国电子科技集团公司第十三研究所 Cmos驱动器晶圆级封装及其制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0639454Y2 (ja) * 1988-09-20 1994-10-12 三洋電機株式会社 半導体集積回路
EP0460554A1 (en) * 1990-05-30 1991-12-11 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JPH09107048A (ja) * 1995-03-30 1997-04-22 Mitsubishi Electric Corp 半導体パッケージ
JP2000100814A (ja) * 1998-09-18 2000-04-07 Hitachi Ltd 半導体装置
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
DE10139985B4 (de) * 2001-08-22 2005-10-27 Infineon Technologies Ag Elektronisches Bauteil mit einem Halbleiterchip sowie Verfahren zu seiner Herstellung
TW577160B (en) * 2002-02-04 2004-02-21 Casio Computer Co Ltd Semiconductor device and manufacturing method thereof
US6734472B2 (en) * 2002-04-25 2004-05-11 Synplicity, Inc. Power and ground shield mesh to remove both capacitive and inductive signal coupling effects of routing in integrated circuit device
CN1180474C (zh) * 2002-06-13 2004-12-15 威盛电子股份有限公司 芯片封装结构及结构中的基底板
JP2004031790A (ja) * 2002-06-27 2004-01-29 Hitachi Maxell Ltd 半導体チップ
JP2004079701A (ja) * 2002-08-14 2004-03-11 Sony Corp 半導体装置及びその製造方法
JP5183186B2 (ja) * 2007-12-14 2013-04-17 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
WO2006059547A1 (ja) 2006-06-08
KR20070088266A (ko) 2007-08-29
CN101814458A (zh) 2010-08-25
JP5039384B2 (ja) 2012-10-03
CN101814458B (zh) 2012-05-30
JPWO2006059547A1 (ja) 2008-06-05
TW200620574A (en) 2006-06-16
US20090166856A1 (en) 2009-07-02
CN1922728B (zh) 2010-05-05
CN1922728A (zh) 2007-02-28

Similar Documents

Publication Publication Date Title
US7166898B2 (en) Flip chip FET device
US6770963B1 (en) Multi-power ring chip scale package for system level integration
JP5638205B2 (ja) 半導体装置
US20220336305A1 (en) Semiconductor device having electrode pads arranged between groups of external electrodes
US20170179112A1 (en) Semiconductor device
CN1286173C (zh) 连接焊垫与静电放电保护电路的电路结构
CN102270611B (zh) 半导体装置
US20170154849A1 (en) Semiconductor device comprising power elements in juxtaposition order
US11552072B2 (en) Electronic discharge device and split multi rail network with symmetrical layout design technique
JP4776861B2 (ja) 半導体装置
TWI379387B (enExample)
US5365103A (en) Punchthru ESD device along centerline of power pad
JP3403981B2 (ja) 半導体装置
US20250048661A1 (en) Configurable capacitor
CN101599480A (zh) 半导体芯片封装结构
CN112992868A (zh) 具静电放电防护功能的半导体装置及静电放电的测试方法
JP2008021852A (ja) 半導体装置
JP2003229428A (ja) 半導体装置
HK1229065B (zh) 用於多电压的分裂式薄膜电容器
JP2010263234A (ja) 半導体集積回路装置
HK1111517B (en) Split thin film capacitor for multiple voltages

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees