JP5637841B2 - 検査装置 - Google Patents

検査装置 Download PDF

Info

Publication number
JP5637841B2
JP5637841B2 JP2010289105A JP2010289105A JP5637841B2 JP 5637841 B2 JP5637841 B2 JP 5637841B2 JP 2010289105 A JP2010289105 A JP 2010289105A JP 2010289105 A JP2010289105 A JP 2010289105A JP 5637841 B2 JP5637841 B2 JP 5637841B2
Authority
JP
Japan
Prior art keywords
inspection apparatus
defect inspection
illumination
optical system
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010289105A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012137348A (ja
JP2012137348A5 (enExample
Inventor
昌昭 伊東
昌昭 伊東
西山　英利
英利 西山
神宮　孝広
孝広 神宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010289105A priority Critical patent/JP5637841B2/ja
Priority to US13/997,496 priority patent/US9602780B2/en
Priority to PCT/JP2011/006129 priority patent/WO2012090371A1/ja
Priority to KR1020137016614A priority patent/KR101496603B1/ko
Publication of JP2012137348A publication Critical patent/JP2012137348A/ja
Publication of JP2012137348A5 publication Critical patent/JP2012137348A5/ja
Application granted granted Critical
Publication of JP5637841B2 publication Critical patent/JP5637841B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2010289105A 2010-12-27 2010-12-27 検査装置 Expired - Fee Related JP5637841B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010289105A JP5637841B2 (ja) 2010-12-27 2010-12-27 検査装置
US13/997,496 US9602780B2 (en) 2010-12-27 2011-11-02 Apparatus for inspecting defect with time/spatial division optical system
PCT/JP2011/006129 WO2012090371A1 (ja) 2010-12-27 2011-11-02 検査装置
KR1020137016614A KR101496603B1 (ko) 2010-12-27 2011-11-02 검사 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010289105A JP5637841B2 (ja) 2010-12-27 2010-12-27 検査装置

Publications (3)

Publication Number Publication Date
JP2012137348A JP2012137348A (ja) 2012-07-19
JP2012137348A5 JP2012137348A5 (enExample) 2013-12-26
JP5637841B2 true JP5637841B2 (ja) 2014-12-10

Family

ID=46382516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010289105A Expired - Fee Related JP5637841B2 (ja) 2010-12-27 2010-12-27 検査装置

Country Status (4)

Country Link
US (1) US9602780B2 (enExample)
JP (1) JP5637841B2 (enExample)
KR (1) KR101496603B1 (enExample)
WO (1) WO2012090371A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9068917B1 (en) * 2006-03-14 2015-06-30 Kla-Tencor Technologies Corp. Systems and methods for inspection of a specimen
JP5331771B2 (ja) * 2010-09-27 2013-10-30 株式会社日立ハイテクノロジーズ 検査装置
JP5833546B2 (ja) * 2010-11-09 2015-12-16 パナソニック株式会社 距離計測装置および距離計測方法
EP2993682A1 (en) * 2014-09-04 2016-03-09 Fei Company Method of performing spectroscopy in a transmission charged-particle microscope
CN107003239B (zh) * 2014-12-10 2022-03-29 赛拓生物科技公司 自触发流式细胞计数仪
US9784689B2 (en) * 2015-07-10 2017-10-10 Applied Materials Israel Ltd. Method and system for inspecting an object with an array of beams
TWI585394B (zh) * 2015-12-09 2017-06-01 由田新技股份有限公司 動態式自動追焦系統
JP6549061B2 (ja) * 2016-05-09 2019-07-24 富士フイルム株式会社 撮影装置および方法並びに撮影装置制御プログラム
JP2018155600A (ja) * 2017-03-17 2018-10-04 東レエンジニアリング株式会社 外観検査装置
US12345661B2 (en) * 2019-08-14 2025-07-01 Hitachi High-Tech Corporation Defect inspection apparatus and defect inspection method
CN110874837B (zh) * 2019-10-31 2023-07-25 中导光电设备股份有限公司 一种基于局部特征分布的缺陷自动检测方法
KR102719272B1 (ko) * 2021-05-12 2024-10-18 (주)하이비젼시스템 위치 선택형 가변 광원 제어 시스템 및 방법
KR20230024468A (ko) 2021-08-11 2023-02-21 삼성전자주식회사 레이저 어닐링 장치 및 그것의 동작 방법
JP2023092933A (ja) * 2021-12-22 2023-07-04 株式会社ヴィーネックス 検査装置及び検査方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142991B2 (ja) * 1993-06-04 2001-03-07 三井金属鉱業株式会社 レーザ走査装置および画像形成方法
JPH07243988A (ja) * 1994-03-04 1995-09-19 Toshiba Corp 表面検査装置
JP3490792B2 (ja) * 1995-03-27 2004-01-26 富士写真フイルム株式会社 表面検査装置
JP3411780B2 (ja) * 1997-04-07 2003-06-03 レーザーテック株式会社 レーザ顕微鏡及びこのレーザ顕微鏡を用いたパターン検査装置
US6248988B1 (en) 1998-05-05 2001-06-19 Kla-Tencor Corporation Conventional and confocal multi-spot scanning optical microscope
JP3453128B2 (ja) * 2001-06-21 2003-10-06 レーザーテック株式会社 光学式走査装置及び欠陥検出装置
US7088443B2 (en) 2002-02-11 2006-08-08 Kla-Tencor Technologies Corporation System for detecting anomalies and/or features of a surface
US6809808B2 (en) 2002-03-22 2004-10-26 Applied Materials, Inc. Wafer defect detection system with traveling lens multi-beam scanner
US6724473B2 (en) 2002-03-27 2004-04-20 Kla-Tencor Technologies Corporation Method and system using exposure control to inspect a surface
JP2005283190A (ja) * 2004-03-29 2005-10-13 Hitachi High-Technologies Corp 異物検査方法及びその装置
JP2005300581A (ja) * 2004-04-06 2005-10-27 Sony Corp マスク検査装置
JP4164470B2 (ja) * 2004-05-18 2008-10-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2006078421A (ja) 2004-09-13 2006-03-23 Olympus Corp パターン欠陥検出装置及びその方法
JP4500641B2 (ja) * 2004-09-29 2010-07-14 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
JP2006162500A (ja) * 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 欠陥検査装置
JP4875936B2 (ja) * 2006-07-07 2012-02-15 株式会社日立ハイテクノロジーズ 異物・欠陥検出方法および異物・欠陥検査装置
JP5349742B2 (ja) * 2006-07-07 2013-11-20 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
JP5279992B2 (ja) * 2006-07-13 2013-09-04 株式会社日立ハイテクノロジーズ 表面検査方法及び装置
JP4857174B2 (ja) * 2007-04-25 2012-01-18 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
JP5466377B2 (ja) * 2008-05-16 2014-04-09 株式会社日立ハイテクノロジーズ 欠陥検査装置
JP5572293B2 (ja) * 2008-07-07 2014-08-13 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
JP2010236966A (ja) * 2009-03-31 2010-10-21 Hitachi High-Technologies Corp 欠陥検査装置およびその方法
JP2012137350A (ja) * 2010-12-27 2012-07-19 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置

Also Published As

Publication number Publication date
JP2012137348A (ja) 2012-07-19
US20130286191A1 (en) 2013-10-31
US9602780B2 (en) 2017-03-21
KR101496603B1 (ko) 2015-02-26
KR20130112053A (ko) 2013-10-11
WO2012090371A1 (ja) 2012-07-05

Similar Documents

Publication Publication Date Title
JP5637841B2 (ja) 検査装置
JP4751617B2 (ja) 欠陥検査方法及びその装置
US7251024B2 (en) Defect inspection method and apparatus therefor
JP5303217B2 (ja) 欠陥検査方法及び欠陥検査装置
CN116783474A (zh) 扫描散射测量叠盖测量
JP5452571B2 (ja) 欠陥検査方法および欠陥検査装置
JP5571969B2 (ja) 欠陥検査方法及びその装置
JP2016024042A (ja) 検査装置及びオートフォーカス方法
US7767982B2 (en) Optical auto focusing system and method for electron beam inspection tool
JP5276833B2 (ja) 欠陥検査方法及び欠陥検査装置
JP5629782B2 (ja) 検査装置
JP2011027662A (ja) 欠陥検査装置およびその方法
JP4822548B2 (ja) 欠陥検査装置
US9791380B2 (en) Inspection device and image capture element
JP3282790B2 (ja) 位相シフトマスクの欠陥検査装置
JP5593209B2 (ja) 検査装置
JP2000097872A (ja) 光学的検査装置
KR0154559B1 (ko) 결함 레티클 검사장치 및 방법
US7528940B2 (en) System and method for inspecting an object using an acousto-optic device
JP2000180373A (ja) 欠陥検査方法及び欠陥検査装置
WO2026028377A1 (ja) 光学検査装置及びその制御方法
KR0154686B1 (ko) 결함 레티클 검사장치 및 방법
JP2004053258A (ja) 異物検査装置及び方法

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120521

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140731

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141021

R150 Certificate of patent or registration of utility model

Ref document number: 5637841

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees