KR101496603B1 - 검사 장치 - Google Patents

검사 장치 Download PDF

Info

Publication number
KR101496603B1
KR101496603B1 KR1020137016614A KR20137016614A KR101496603B1 KR 101496603 B1 KR101496603 B1 KR 101496603B1 KR 1020137016614 A KR1020137016614 A KR 1020137016614A KR 20137016614 A KR20137016614 A KR 20137016614A KR 101496603 B1 KR101496603 B1 KR 101496603B1
Authority
KR
South Korea
Prior art keywords
illumination
optical system
wafer
sample
delete delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020137016614A
Other languages
English (en)
Korean (ko)
Other versions
KR20130112053A (ko
Inventor
마사아끼 이또
히데또시 니시야마
다까히로 진구
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20130112053A publication Critical patent/KR20130112053A/ko
Application granted granted Critical
Publication of KR101496603B1 publication Critical patent/KR101496603B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020137016614A 2010-12-27 2011-11-02 검사 장치 Expired - Fee Related KR101496603B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010289105A JP5637841B2 (ja) 2010-12-27 2010-12-27 検査装置
JPJP-P-2010-289105 2010-12-27
PCT/JP2011/006129 WO2012090371A1 (ja) 2010-12-27 2011-11-02 検査装置

Publications (2)

Publication Number Publication Date
KR20130112053A KR20130112053A (ko) 2013-10-11
KR101496603B1 true KR101496603B1 (ko) 2015-02-26

Family

ID=46382516

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137016614A Expired - Fee Related KR101496603B1 (ko) 2010-12-27 2011-11-02 검사 장치

Country Status (4)

Country Link
US (1) US9602780B2 (enExample)
JP (1) JP5637841B2 (enExample)
KR (1) KR101496603B1 (enExample)
WO (1) WO2012090371A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220154000A (ko) * 2021-05-12 2022-11-21 (주)하이비젼시스템 위치 선택형 가변 광원 제어 시스템 및 방법

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9068917B1 (en) * 2006-03-14 2015-06-30 Kla-Tencor Technologies Corp. Systems and methods for inspection of a specimen
JP5331771B2 (ja) * 2010-09-27 2013-10-30 株式会社日立ハイテクノロジーズ 検査装置
JP5833546B2 (ja) * 2010-11-09 2015-12-16 パナソニック株式会社 距離計測装置および距離計測方法
EP2993682A1 (en) * 2014-09-04 2016-03-09 Fei Company Method of performing spectroscopy in a transmission charged-particle microscope
CN107003239B (zh) * 2014-12-10 2022-03-29 赛拓生物科技公司 自触发流式细胞计数仪
US9784689B2 (en) * 2015-07-10 2017-10-10 Applied Materials Israel Ltd. Method and system for inspecting an object with an array of beams
TWI585394B (zh) * 2015-12-09 2017-06-01 由田新技股份有限公司 動態式自動追焦系統
JP6549061B2 (ja) * 2016-05-09 2019-07-24 富士フイルム株式会社 撮影装置および方法並びに撮影装置制御プログラム
JP2018155600A (ja) * 2017-03-17 2018-10-04 東レエンジニアリング株式会社 外観検査装置
US12345661B2 (en) * 2019-08-14 2025-07-01 Hitachi High-Tech Corporation Defect inspection apparatus and defect inspection method
CN110874837B (zh) * 2019-10-31 2023-07-25 中导光电设备股份有限公司 一种基于局部特征分布的缺陷自动检测方法
KR20230024468A (ko) 2021-08-11 2023-02-21 삼성전자주식회사 레이저 어닐링 장치 및 그것의 동작 방법
JP2023092933A (ja) * 2021-12-22 2023-07-04 株式会社ヴィーネックス 検査装置及び検査方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005283190A (ja) * 2004-03-29 2005-10-13 Hitachi High-Technologies Corp 異物検査方法及びその装置
JP2008020359A (ja) * 2006-07-13 2008-01-31 Hitachi High-Technologies Corp 表面検査方法及び装置
JP2010014635A (ja) * 2008-07-07 2010-01-21 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
JP2010236966A (ja) * 2009-03-31 2010-10-21 Hitachi High-Technologies Corp 欠陥検査装置およびその方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142991B2 (ja) * 1993-06-04 2001-03-07 三井金属鉱業株式会社 レーザ走査装置および画像形成方法
JPH07243988A (ja) * 1994-03-04 1995-09-19 Toshiba Corp 表面検査装置
JP3490792B2 (ja) * 1995-03-27 2004-01-26 富士写真フイルム株式会社 表面検査装置
JP3411780B2 (ja) * 1997-04-07 2003-06-03 レーザーテック株式会社 レーザ顕微鏡及びこのレーザ顕微鏡を用いたパターン検査装置
US6248988B1 (en) 1998-05-05 2001-06-19 Kla-Tencor Corporation Conventional and confocal multi-spot scanning optical microscope
JP3453128B2 (ja) * 2001-06-21 2003-10-06 レーザーテック株式会社 光学式走査装置及び欠陥検出装置
US7088443B2 (en) 2002-02-11 2006-08-08 Kla-Tencor Technologies Corporation System for detecting anomalies and/or features of a surface
US6809808B2 (en) 2002-03-22 2004-10-26 Applied Materials, Inc. Wafer defect detection system with traveling lens multi-beam scanner
US6724473B2 (en) 2002-03-27 2004-04-20 Kla-Tencor Technologies Corporation Method and system using exposure control to inspect a surface
JP2005300581A (ja) * 2004-04-06 2005-10-27 Sony Corp マスク検査装置
JP4164470B2 (ja) * 2004-05-18 2008-10-15 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2006078421A (ja) 2004-09-13 2006-03-23 Olympus Corp パターン欠陥検出装置及びその方法
JP4500641B2 (ja) * 2004-09-29 2010-07-14 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
JP2006162500A (ja) * 2004-12-09 2006-06-22 Hitachi High-Technologies Corp 欠陥検査装置
JP4875936B2 (ja) * 2006-07-07 2012-02-15 株式会社日立ハイテクノロジーズ 異物・欠陥検出方法および異物・欠陥検査装置
JP5349742B2 (ja) * 2006-07-07 2013-11-20 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
JP4857174B2 (ja) * 2007-04-25 2012-01-18 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
JP5466377B2 (ja) * 2008-05-16 2014-04-09 株式会社日立ハイテクノロジーズ 欠陥検査装置
JP2012137350A (ja) * 2010-12-27 2012-07-19 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005283190A (ja) * 2004-03-29 2005-10-13 Hitachi High-Technologies Corp 異物検査方法及びその装置
JP2008020359A (ja) * 2006-07-13 2008-01-31 Hitachi High-Technologies Corp 表面検査方法及び装置
JP2010014635A (ja) * 2008-07-07 2010-01-21 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
JP2010236966A (ja) * 2009-03-31 2010-10-21 Hitachi High-Technologies Corp 欠陥検査装置およびその方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220154000A (ko) * 2021-05-12 2022-11-21 (주)하이비젼시스템 위치 선택형 가변 광원 제어 시스템 및 방법
KR102719272B1 (ko) 2021-05-12 2024-10-18 (주)하이비젼시스템 위치 선택형 가변 광원 제어 시스템 및 방법

Also Published As

Publication number Publication date
JP5637841B2 (ja) 2014-12-10
JP2012137348A (ja) 2012-07-19
US20130286191A1 (en) 2013-10-31
US9602780B2 (en) 2017-03-21
KR20130112053A (ko) 2013-10-11
WO2012090371A1 (ja) 2012-07-05

Similar Documents

Publication Publication Date Title
KR101496603B1 (ko) 검사 장치
CN116783474B (zh) 扫描散射测量叠盖测量
JP4751617B2 (ja) 欠陥検査方法及びその装置
US7847927B2 (en) Defect inspection method and defect inspection apparatus
JP5303217B2 (ja) 欠陥検査方法及び欠陥検査装置
KR20140136054A (ko) 결함 검사 장치 및 결함 검사 방법
US20090213215A1 (en) Defect inspection apparatus and method
CN110658196B (zh) 一种缺陷检测装置及缺陷检测方法
KR20140133925A (ko) 결함 검사 방법 및 결함 검사 장치
WO2015011968A1 (ja) 検査装置
JP2016024042A (ja) 検査装置及びオートフォーカス方法
US7767982B2 (en) Optical auto focusing system and method for electron beam inspection tool
JP5629782B2 (ja) 検査装置
JP2011027662A (ja) 欠陥検査装置およびその方法
US9791380B2 (en) Inspection device and image capture element
JP5593209B2 (ja) 検査装置
JP3282790B2 (ja) 位相シフトマスクの欠陥検査装置
KR0154559B1 (ko) 결함 레티클 검사장치 및 방법
JP2000180373A (ja) 欠陥検査方法及び欠陥検査装置
KR0154686B1 (ko) 결함 레티클 검사장치 및 방법
WO2026028377A1 (ja) 光学検査装置及びその制御方法
KR20240055201A (ko) 웨이퍼 표면 검사 장치
KR20240109032A (ko) 광학 계측 설비, 그를 이용한 광학 계측 방법 및 그를 이용한 반도체 장치의 제조 방법
JPH102864A (ja) 異物検査装置
JP2004053258A (ja) 異物検査装置及び方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180218

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180218

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000