JP5636319B2 - 光モジュールの製造方法 - Google Patents

光モジュールの製造方法 Download PDF

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Publication number
JP5636319B2
JP5636319B2 JP2011060916A JP2011060916A JP5636319B2 JP 5636319 B2 JP5636319 B2 JP 5636319B2 JP 2011060916 A JP2011060916 A JP 2011060916A JP 2011060916 A JP2011060916 A JP 2011060916A JP 5636319 B2 JP5636319 B2 JP 5636319B2
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JP
Japan
Prior art keywords
bonding
load
optical
substrate
optical element
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Expired - Fee Related
Application number
JP2011060916A
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English (en)
Japanese (ja)
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JP2012198295A5 (enExample
JP2012198295A (ja
Inventor
薫 依田
薫 依田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP2011060916A priority Critical patent/JP5636319B2/ja
Priority to EP12159734.8A priority patent/EP2500757B1/en
Priority to US13/422,656 priority patent/US9214446B2/en
Priority to CN201210070077.7A priority patent/CN102684064B/zh
Publication of JP2012198295A publication Critical patent/JP2012198295A/ja
Publication of JP2012198295A5 publication Critical patent/JP2012198295A5/ja
Application granted granted Critical
Publication of JP5636319B2 publication Critical patent/JP5636319B2/ja
Expired - Fee Related legal-status Critical Current
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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2011060916A 2011-03-18 2011-03-18 光モジュールの製造方法 Expired - Fee Related JP5636319B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011060916A JP5636319B2 (ja) 2011-03-18 2011-03-18 光モジュールの製造方法
EP12159734.8A EP2500757B1 (en) 2011-03-18 2012-03-15 Method of manufacturing optical module
US13/422,656 US9214446B2 (en) 2011-03-18 2012-03-16 Method of manufacturing optical module
CN201210070077.7A CN102684064B (zh) 2011-03-18 2012-03-16 光模块的制造方法

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Application Number Priority Date Filing Date Title
JP2011060916A JP5636319B2 (ja) 2011-03-18 2011-03-18 光モジュールの製造方法

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JP2012198295A JP2012198295A (ja) 2012-10-18
JP2012198295A5 JP2012198295A5 (enExample) 2014-02-20
JP5636319B2 true JP5636319B2 (ja) 2014-12-03

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US (1) US9214446B2 (enExample)
EP (1) EP2500757B1 (enExample)
JP (1) JP5636319B2 (enExample)
CN (1) CN102684064B (enExample)

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JP5847473B2 (ja) * 2011-07-21 2016-01-20 シチズンホールディングス株式会社 光モジュール
JP5230829B1 (ja) * 2012-03-09 2013-07-10 株式会社フジクラ 水分の除去方法、光ファイバの半田付け方法、及び、半導体レーザモジュールの製造方法
JP5925062B2 (ja) * 2012-06-18 2016-05-25 シチズンホールディングス株式会社 光モジュール及び光モジュールの製造方法
DE102015002176A1 (de) * 2015-02-24 2016-08-25 Jenoptik Laser Gmbh Verfahren zum Herstellen eines Diodenlasers und Diodenlaser
US10126504B2 (en) * 2015-05-27 2018-11-13 The United States Of America, As Represented By The Secretary Of The Navy Antireflective surface structures for active and passive optical fiber
CN105711224B (zh) * 2016-03-25 2017-11-24 湖南新中合光电科技股份有限公司 一种光分路器晶圆贴片系统

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US5393697A (en) * 1994-05-06 1995-02-28 Industrial Technology Research Institute Composite bump structure and methods of fabrication
US5568892A (en) * 1994-06-16 1996-10-29 Lucent Technologies Inc. Alignment and bonding techniques
JPH10208269A (ja) 1997-01-28 1998-08-07 Toshiba Corp 光ピックアップヘッド及びその製造方法並びに製造装置
JP3655179B2 (ja) * 1999-10-20 2005-06-02 富士通株式会社 半導体チップ素子
JP2002111113A (ja) * 2000-09-28 2002-04-12 Hitachi Ltd 光モジュール
JP3790995B2 (ja) * 2004-01-22 2006-06-28 有限会社ボンドテック 接合方法及びこの方法により作成されるデバイス並びに接合装置
JP2007133011A (ja) * 2005-11-08 2007-05-31 Nec Corp 光結合構造およびその製造方法、光モジュール
JP4349475B2 (ja) * 2009-03-19 2009-10-21 三菱電機株式会社 光モジュールの製造方法

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