JP5627929B2 - 非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法 - Google Patents

非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法 Download PDF

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Publication number
JP5627929B2
JP5627929B2 JP2010123448A JP2010123448A JP5627929B2 JP 5627929 B2 JP5627929 B2 JP 5627929B2 JP 2010123448 A JP2010123448 A JP 2010123448A JP 2010123448 A JP2010123448 A JP 2010123448A JP 5627929 B2 JP5627929 B2 JP 5627929B2
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Prior art keywords
film
thin film
oxide thin
amorphous oxide
resistivity
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JP2010123448A
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English (en)
Japanese (ja)
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JP2011249691A (ja
Inventor
威史 濱
威史 濱
智子 山田
山田　　智子
梅田　賢一
賢一 梅田
文彦 望月
文彦 望月
田中　淳
淳 田中
鈴木　真之
真之 鈴木
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2010123448A priority Critical patent/JP5627929B2/ja
Priority to TW100116767A priority patent/TWI485775B/zh
Priority to KR1020110045389A priority patent/KR101523125B1/ko
Publication of JP2011249691A publication Critical patent/JP2011249691A/ja
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Publication of JP5627929B2 publication Critical patent/JP5627929B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2010123448A 2010-05-28 2010-05-28 非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法 Active JP5627929B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010123448A JP5627929B2 (ja) 2010-05-28 2010-05-28 非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法
TW100116767A TWI485775B (zh) 2010-05-28 2011-05-13 非晶質氧化物薄膜之製造方法及電場效果型電晶體之製造方法
KR1020110045389A KR101523125B1 (ko) 2010-05-28 2011-05-13 비정질 산화물 박막의 제조 방법 및 전계 효과형 트랜지스터의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010123448A JP5627929B2 (ja) 2010-05-28 2010-05-28 非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法

Publications (2)

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JP2011249691A JP2011249691A (ja) 2011-12-08
JP5627929B2 true JP5627929B2 (ja) 2014-11-19

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JP2010123448A Active JP5627929B2 (ja) 2010-05-28 2010-05-28 非晶質酸化物薄膜の製造方法及び電界効果型トランジスタの製造方法

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JP (1) JP5627929B2 (ko)
KR (1) KR101523125B1 (ko)
TW (1) TWI485775B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102225396B1 (ko) * 2012-01-25 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US9929310B2 (en) * 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
TWI608523B (zh) * 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
WO2016006297A1 (ja) * 2014-07-07 2016-01-14 ソニー株式会社 電子デバイス及びその製造方法、固体撮像装置、並びに、絶縁材料
US11031506B2 (en) 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4732080B2 (ja) * 2005-09-06 2011-07-27 キヤノン株式会社 発光素子
JP4981283B2 (ja) * 2005-09-06 2012-07-18 キヤノン株式会社 アモルファス酸化物層を用いた薄膜トランジスタ
JP5006598B2 (ja) * 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
JP2007109918A (ja) * 2005-10-14 2007-04-26 Toppan Printing Co Ltd トランジスタおよびその製造方法
JP5177954B2 (ja) * 2006-01-30 2013-04-10 キヤノン株式会社 電界効果型トランジスタ
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
JP5320746B2 (ja) * 2007-03-28 2013-10-23 凸版印刷株式会社 薄膜トランジスタ
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
JP2010103451A (ja) * 2007-11-26 2010-05-06 Fujifilm Corp 薄膜電界効果型トランジスタおよびそれを用いた電界発光装置
KR101344594B1 (ko) * 2008-05-22 2013-12-26 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 그것을 이용한 비정질 산화물 박막의 형성 방법, 및 박막 트랜지스터의 제조 방법
JP5345456B2 (ja) * 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP2012124446A (ja) * 2010-04-07 2012-06-28 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ

Also Published As

Publication number Publication date
JP2011249691A (ja) 2011-12-08
TW201207942A (en) 2012-02-16
KR101523125B1 (ko) 2015-05-26
TWI485775B (zh) 2015-05-21
KR20110131091A (ko) 2011-12-06

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