JP5619830B2 - 樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 - Google Patents
樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 Download PDFInfo
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- JP5619830B2 JP5619830B2 JP2012161701A JP2012161701A JP5619830B2 JP 5619830 B2 JP5619830 B2 JP 5619830B2 JP 2012161701 A JP2012161701 A JP 2012161701A JP 2012161701 A JP2012161701 A JP 2012161701A JP 5619830 B2 JP5619830 B2 JP 5619830B2
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Description
さらにまた、上記課題を解決するために、上記本発明の半導体装置を製造する方法は、粒子状の反磁性物質と樹脂とを金型内に配置し、前記金型内に配置された前記粒子状の反磁性物質に磁場を印加して、前記粒子状の反磁性物質を前記金型の内側表面の少なくとも一部から遠ざかる方向に移動させた後、前記金型内で樹脂を硬化させて複合構造体を製造し、複合構造体を放熱部材として封止することを特徴とする。
反磁性物質は、磁場をかけたときに、磁場の逆向きに磁化されて、磁場とその勾配の積に比例する力が磁石に反発する方向に生じる磁性を有する物質である。具体的には、反磁性物質として、金(Au)、銀(Ag)、銅(Cu)、亜鉛(Zn)、水銀(Hg)、ビスマス(Bi)、グラファイトおよびグラフェンが挙げられる。反磁性物質は、異なる種類のものを2以上組み合わせて使用してよい。
樹脂は、複合構造体において、反磁性物質層の表面の少なくとも一部を被覆して、当該一部において絶縁性を確保する役割を有する。樹脂は、所望の絶縁性を有するものであれば、公知のものを任意に使用することができる。具体的には、ポリエチレン(PE)、ポリプロピレン(PP)、ポリスチレン(PS)、ポリ塩化ビニル(PVC)、塩素化ポリ塩化ビニル(CPVC)、ポリ塩化ビニリデン(PVDC)、ポリフッ化ビニリデン(PVDF)、ポリビニルアセタール(PVA)、ポリウレタン(PU)、ポリアミド(PA)、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PBT)、ポリエーテルサルフォン(PES)、ポリサルフォン(PSF)、フェノール樹脂、シリコーン樹脂、エポキシ樹脂、尿素樹脂、不飽和ポリエステル樹脂、またはジアリルフタレート樹脂を使用して、樹脂層を形成することができる。
本発明の複合構造体は、前述の反磁性物質と樹脂とを用いて、後述する方法により製造される。本発明の複合構造体は、例えば、図1(a)に示すような断面、または図2(a)に示すような断面を有し、図1(b)に示すような外観、または図2(b)に示すような外観を有するものである。図1(a)(b)および図2(a)(b)の複合構造体10、20は、ともに、広い主表面と主表面の寸法に比較して有意に小さい寸法を有する側面とを有するシート状であり、2つの主表面が樹脂層14で覆われている。ここで、2つの主表面とは、反磁性物質層12の2つの平行な対向する表面である。図1(a)(b)の複合構造体10においては、反磁性物質層12の側面がすべて樹脂層14で覆われている。図2(a)(b)の複合構造体20においては、反磁性物質層12の2つの主表面に加えて、主表面に垂直な4つの側面のうちの3つの側面が樹脂層14で被覆され(即ち、5つの表面が被覆され)、1つの側面(第1側面)が露出している。ここで、反磁性物質層12が前述の反磁性物質であり、樹脂層14が前述の樹脂である。
このようにして得られる複合構造体は、絶縁層である樹脂層14で、反磁性物質層12の表面の少なくとも一部が被覆されているため、半導体装置における部品として使用することができる。反磁性物質層12がグラファイトからなる場合、反磁性物質層12は優れた熱伝導性を有するので、複合構造体は放熱部材(例えば、放熱ブロックまたは放熱フィン)として好ましく用いられる。また、反磁性物質22は、電磁波を反射する性質を有し、それが所定の方向の磁界におかれたときに、当該磁界を打ち消す方向に磁界を発生させる。よって、複合構造体は、半導体装置を構成する素子または部品から発生する電磁波を低減する役割をも果たす。
5 絶縁シート
6 小片
10、20、50 複合構造体
12、52 反磁性物質層
14、54 樹脂層
22 反磁性物質
24 樹脂
25 混合物
30 金型
40 パワーモジュール
42 パワー素子
44 駆動素子
46 ダイパッド
48 導電性ペースト
Claims (8)
- 複合構造体を放熱部材として含む半導体装置であって、
前記複合構造体は、反磁性物質層と、前記反磁性物質層の表面の少なくとも一部を覆う樹脂層とを含み、
前記反磁性物質層は、粒子状の反磁性物質が集合してなる層であり、
前記粒子状の反磁性物質は、柱状粒子または板状粒子であり、
前記反磁性物質層において、前記柱状粒子の長軸または前記板状粒子の広い面が、複合構造体の厚さ方向と平行な方向に配向しており、
前記反磁性物質層は、前記複合構造体の厚さ方向と垂直な方向において中央部の厚みが両端部の厚みよりも薄く、
前記樹脂層は、前記複合構造体の厚さ方向と垂直な方向において中央部の厚みが両端部の厚みよりも厚い、
半導体装置。 - 前記粒子状の前記反磁性物質が、粒径が0.01μm以上かつ250μm以下の粒子である、
請求項1に記載の半導体装置。 - 前記粒子状の反磁性物質が、鱗片状、ロッド状、フレーク状、または針状の粒子である、
請求項1または2に記載の半導体装置。 - 前記樹脂層は、10μm未満の厚さを有している、
請求項1〜3のいずれか1項に記載の半導体装置。 - 前記粒子状の反磁性物質が、グラファイトである、
請求項1〜4のいずれか1項に記載の半導体装置。 - 前記反磁性物質が、ビスマス、または表面がビスマスで被覆された物質である、
請求項1〜5のいずれか1項に記載の半導体装置。
半導体装置。 - 前記樹脂層は、熱硬化性樹脂が硬化してなる層である、
請求項1〜6のいずれか1項に記載の半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置を製造する製造方法であって、
粒子状の反磁性物質と樹脂とを金型内に配置し、前記金型内に配置された前記粒子状の反磁性物質に磁場を印加して、前記粒子状の反磁性物質を前記金型の内側表面の少なくとも一部から遠ざかる方向に移動させた後、
前記金型内で前記樹脂を硬化させて複合構造体を製造し、
前記複合構造体を放熱部材として封止して半導体装置を製造する、
半導体装置の製造方法。
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JP2012161701A JP5619830B2 (ja) | 2011-08-24 | 2012-07-20 | 樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 |
CN201210301612.5A CN102956578B (zh) | 2011-08-24 | 2012-08-22 | 树脂-反磁性物质复合结构体、其制造方法、以及使用其的半导体装置 |
US13/591,294 US8704362B2 (en) | 2011-08-24 | 2012-08-22 | Resin-diamagnetic material composite structure |
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ITTO20130677A1 (it) | 2013-08-06 | 2015-02-07 | Dayco Europe Srl | Puleggia filtrante per una trasmissione a cinghia |
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