JP2013062486A - 樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 - Google Patents
樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 Download PDFInfo
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Abstract
【解決手段】反磁性物質22の粒子と樹脂24とを金型30内に配置し、金型30内に配置された反磁性物質22に磁場を印加して、反磁性物質22を金型30の内側表面の少なくとも一部から遠ざかる方向に移動させた後、金型30内で樹脂24を硬化させて樹脂−反磁性物質複合構造体を製造することを含む方法によって、反磁性物質層12と樹脂層14とからなる樹脂−反磁性物質の複合構造体10を得る。
【選択図】図4
Description
また、上記課題を解決するために、本発明の樹脂−反磁性物質複合構造体の製造方法は、反磁性物質の粒子と樹脂とを金型内に配置し、前記金型内に配置された前記反磁性物質に磁場を印加して、前記反磁性物質を前記金型の内側表面の少なくとも一部から遠ざかる方向に移動させた後、前記金型内で樹脂を硬化させて樹脂−反磁性物質複合構造体を製造することを特徴とする。
反磁性物質は、磁場をかけたときに、磁場の逆向きに磁化されて、磁場とその勾配の積に比例する力が磁石に反発する方向に生じる磁性を有する物質である。具体的には、反磁性物質として、金(Au)、銀(Ag)、銅(Cu)、亜鉛(Zn)、水銀(Hg)、ビスマス(Bi)、グラファイトおよびグラフェンが挙げられる。反磁性物質は、異なる種類のものを2以上組み合わせて使用してよい。
樹脂は、複合構造体において、反磁性物質層の表面の少なくとも一部を被覆して、当該一部において絶縁性を確保する役割を有する。樹脂は、所望の絶縁性を有するものであれば、公知のものを任意に使用することができる。具体的には、ポリエチレン(PE)、ポリプロピレン(PP)、ポリスチレン(PS)、ポリ塩化ビニル(PVC)、塩素化ポリ塩化ビニル(CPVC)、ポリ塩化ビニリデン(PVDC)、ポリフッ化ビニリデン(PVDF)、ポリビニルアセタール(PVA)、ポリウレタン(PU)、ポリアミド(PA)、ポリエチレンテレフタレート(PET)、ポリブチレンテレフタレート(PBT)、ポリエーテルサルフォン(PES)、ポリサルフォン(PSF)、フェノール樹脂、シリコーン樹脂、エポキシ樹脂、尿素樹脂、不飽和ポリエステル樹脂、またはジアリルフタレート樹脂を使用して、樹脂層を形成することができる。
本発明の複合構造体は、前述の反磁性物質と樹脂とを用いて、後述する方法により製造される。本発明の複合構造体は、例えば、図1(a)に示すような断面、または図2(a)に示すような断面を有し、図1(b)に示すような外観、または図2(b)に示すような外観を有するものである。図1(a)(b)および図2(a)(b)の複合構造体10、20は、ともに、広い主表面と主表面の寸法に比較して有意に小さい寸法を有する側面とを有するシート状であり、2つの主表面が樹脂層14で覆われている。ここで、2つの主表面とは、反磁性物質層12の2つの平行な対向する表面である。図1(a)(b)の複合構造体10においては、反磁性物質層12の側面がすべて樹脂層14で覆われている。図2(a)(b)の複合構造体20においては、反磁性物質層12の2つの主表面に加えて、主表面に垂直な4つの側面のうちの3つの側面が樹脂層14で被覆され(即ち、5つの表面が被覆され)、1つの側面(第1側面)が露出している。ここで、反磁性物質層12が前述の反磁性物質であり、樹脂層14が前述の樹脂である。
このようにして得られる複合構造体は、絶縁層である樹脂層14で、反磁性物質層12の表面の少なくとも一部が被覆されているため、半導体装置における部品として使用することができる。反磁性物質層12がグラファイトからなる場合、反磁性物質層12は優れた熱伝導性を有するので、複合構造体は放熱部材(例えば、放熱ブロックまたは放熱フィン)として好ましく用いられる。また、反磁性物質22は、電磁波を反射する性質を有し、それが所定の方向の磁界におかれたときに、当該磁界を打ち消す方向に磁界を発生させる。よって、複合構造体は、半導体装置を構成する素子または部品から発生する電磁波を低減する役割をも果たす。
5 絶縁シート
6 小片
10、20、50 複合構造体
12、52 反磁性物質層
14、54 樹脂層
22 反磁性物質
24 樹脂
25 混合物
30 金型
40 パワーモジュール
42 パワー素子
44 駆動素子
46 ダイパッド
48 導電性ペースト
Claims (13)
- 反磁性物質層と、前記反磁性物質層の表面の少なくとも一部を覆う樹脂層とを含み、
前記反磁性物質層が反磁性物質の粒子が集合してなる層である、
樹脂−反磁性物質複合構造体。 - 前記反磁性物質層は、平行な2つの表面および前記2つの表面に垂直である1つまたは複数の側面を有し、
前記樹脂層が、前記2つの表面と、前記1つまたは前記複数の側面のうち少なくとも1つの側面とを覆う、
請求項1に記載の樹脂−反磁性物質複合構造体。 - 前記反射物質層は、樹脂−反磁性物質複合構造体の厚さ方向と垂直な方向において中央部の厚みが薄く、
前記樹脂層は、樹脂−反磁性物質複合構造体の厚さ方向と垂直な方向において中央部の厚みが厚い
請求項1または2に記載の樹脂−反磁性物質複合構造体。 - 前記樹脂層は、10μm未満の厚さを有している、
請求項1〜3のいずれか1項に記載の樹脂−反磁性物質複合構造体。 - 前記反磁性物質の粒子は、柱状粒子または板状粒子であり、
前記反磁性物質層において、前記柱状粒子の長軸または前記板状粒子の広い面が、樹脂−反磁性物質複合構造体の厚さ方向と平行な方向に配向している、
請求項1〜4のいずれか1項に記載の樹脂−反磁性物質複合構造体。 - 前記反磁性物質が、グラファイトである、
請求項1〜5のいずれか1項に記載の樹脂−反磁性物質複合構造体。 - 前記反磁性物質が、ビスマス、または表面がビスマスで被覆された物質である、
請求項1〜5のいずれか1項に記載の樹脂−反磁性物質複合構造体。 - 前記樹脂層は、熱硬化性樹脂が硬化してなる層である、
請求項1〜7のいずれか1項に記載の樹脂−反磁性物質複合構造体。 - 請求項1〜8のいずれか1項に記載の樹脂−反磁性物質複合構造体を放熱部材として含む、
半導体装置。 - 反磁性物質の粒子と樹脂とを金型内に配置し、前記金型内に配置された前記反磁性物質に磁場を印加して、前記反磁性物質を前記金型の内側表面の少なくとも一部から遠ざかる方向に移動させた後、
前記金型内で前記樹脂を硬化させて複合構造体を製造する、
樹脂−反磁性物質複合構造体の製造方法。 - 前記反磁性物質が柱状粒子または板状粒子であり、前記反磁性物質を移動させて前記柱状粒子の長軸または前記板状粒子の広い面を前記磁場の方向と平行な方向に配向させる、
請求項10に記載の樹脂−反磁性物質複合構造体の製造方法。 - 前記金型が磁性体であり、
前記金型に電流を印加することで発生した磁場を、前記金型内に配置された前記反磁性物質に印加する、
請求項10または11に記載の樹脂−反磁性物質複合構造体の製造方法。 - 請求項10〜12のいずれか1項に記載の製造方法で樹脂−反磁性物質複合構造体を製造し、前記樹脂−反磁性物質複合構造体を放熱部材として封止して半導体装置を製造する、
半導体装置の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130049187A1 (en) * | 2011-08-24 | 2013-02-28 | Masanori Minamio | Resin-diamagnetic material composite structure, method for producing the same, and semiconductor device using the same |
WO2022030846A1 (ko) * | 2020-08-06 | 2022-02-10 | 자화전자(주) | 방열시트 및 이를 구비한 전자기기 |
WO2022182015A1 (ko) * | 2021-02-25 | 2022-09-01 | 삼성전자 주식회사 | 방열 부재 및 그를 포함하는 전자 장치 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1399942B1 (it) * | 2010-05-11 | 2013-05-09 | Masiero | Stampo per la realizzazione di prodotti con inserti costampati |
ITTO20130677A1 (it) | 2013-08-06 | 2015-02-07 | Dayco Europe Srl | Puleggia filtrante per una trasmissione a cinghia |
DE102013218826A1 (de) * | 2013-09-19 | 2015-03-19 | Siemens Aktiengesellschaft | Kühlkörper |
US9291217B2 (en) | 2014-04-08 | 2016-03-22 | Dayco Ip Holdings, Llc | Pulley assembly with radially oriented decoupling mechanism |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000281995A (ja) * | 1999-03-30 | 2000-10-10 | Polymatech Co Ltd | 熱伝導性接着フィルムおよび半導体装置 |
JP2002124795A (ja) * | 2000-10-12 | 2002-04-26 | Nippon Bismuth Kk | 電磁波シールドシート |
JP2004256687A (ja) * | 2003-02-26 | 2004-09-16 | Polymatech Co Ltd | 熱伝導性反応硬化型樹脂成形体及びその製造方法 |
JP2007273943A (ja) * | 2006-03-30 | 2007-10-18 | General Electric Co <Ge> | 高度ヒートシンク及び熱スプレッダ |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136095A (en) * | 1987-05-19 | 1992-08-04 | Syntex (U.S.A.) Inc. | Reversible agglutination mediators |
JPH03147891A (ja) | 1989-11-06 | 1991-06-24 | Ricoh Co Ltd | 熱転写記録媒体 |
GB9814835D0 (en) * | 1998-07-08 | 1998-09-09 | Europ Org For Nuclear Research | A thermal management board |
JP2000281802A (ja) * | 1999-03-30 | 2000-10-10 | Polymatech Co Ltd | 熱伝導性成形体およびその製造方法ならびに半導体装置 |
JP4528397B2 (ja) * | 1999-12-17 | 2010-08-18 | ポリマテック株式会社 | 接着方法および電子部品 |
US7326497B2 (en) * | 2001-12-21 | 2008-02-05 | Samsung Sdi Co., Ltd. | Graphite-containing composition, negative electrode for a lithium secondary battery, and lithium secondary battery |
US6946190B2 (en) * | 2002-02-06 | 2005-09-20 | Parker-Hannifin Corporation | Thermal management materials |
JP3913118B2 (ja) * | 2002-06-13 | 2007-05-09 | 忠正 藤村 | 超微粒ダイヤモンド粒子を分散した金属薄膜層、該薄膜層を有する金属材料、及びそれらの製造方法 |
FR2843230B1 (fr) * | 2002-08-02 | 2005-04-29 | Commissariat Energie Atomique | Actionneur magnetique a levitation |
FR2857778B1 (fr) * | 2003-07-17 | 2006-02-03 | Commissariat Energie Atomique | Actionneur magnetique a levitation a temps de commutation et/ou courant d'actionnement reduits. |
US7220485B2 (en) | 2003-09-19 | 2007-05-22 | Momentive Performance Materials Inc. | Bulk high thermal conductivity feedstock and method of making thereof |
US7292441B2 (en) | 2003-11-25 | 2007-11-06 | Advanced Energy Technology Inc. | Thermal solution for portable electronic devices |
US20100326645A1 (en) | 2004-01-21 | 2010-12-30 | Wei Fan | Thermal pyrolytic graphite laminates with vias |
JP2006165153A (ja) | 2004-12-06 | 2006-06-22 | Matsushita Electric Ind Co Ltd | 熱伝導シート |
US7235745B2 (en) * | 2005-01-10 | 2007-06-26 | Endicott Interconnect Technologies, Inc. | Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate |
US7758956B2 (en) * | 2005-02-16 | 2010-07-20 | Fujifilm Corporation | Antireflection film and polarizing plate and image display device using same |
JP2007189154A (ja) * | 2006-01-16 | 2007-07-26 | Fujitsu Ltd | 熱伝導接合材及び実装方法 |
JP4897360B2 (ja) * | 2006-06-08 | 2012-03-14 | ポリマテック株式会社 | 熱伝導性成形体及びその製造方法 |
WO2011080338A1 (de) * | 2009-12-31 | 2011-07-07 | Sgl Carbon Se | Einrichtung zur temperierung eines raums |
JP5619830B2 (ja) * | 2011-08-24 | 2014-11-05 | パナソニック株式会社 | 樹脂−反磁性物質複合構造体、その製造方法、およびそれを用いた半導体装置 |
JP5556803B2 (ja) * | 2011-12-28 | 2014-07-23 | コニカミノルタ株式会社 | 二成分現像剤及び現像方法 |
-
2012
- 2012-07-20 JP JP2012161701A patent/JP5619830B2/ja not_active Expired - Fee Related
- 2012-08-22 CN CN201210301612.5A patent/CN102956578B/zh not_active Expired - Fee Related
- 2012-08-22 US US13/591,294 patent/US8704362B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000281995A (ja) * | 1999-03-30 | 2000-10-10 | Polymatech Co Ltd | 熱伝導性接着フィルムおよび半導体装置 |
JP2002124795A (ja) * | 2000-10-12 | 2002-04-26 | Nippon Bismuth Kk | 電磁波シールドシート |
JP2004256687A (ja) * | 2003-02-26 | 2004-09-16 | Polymatech Co Ltd | 熱伝導性反応硬化型樹脂成形体及びその製造方法 |
JP2007273943A (ja) * | 2006-03-30 | 2007-10-18 | General Electric Co <Ge> | 高度ヒートシンク及び熱スプレッダ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130049187A1 (en) * | 2011-08-24 | 2013-02-28 | Masanori Minamio | Resin-diamagnetic material composite structure, method for producing the same, and semiconductor device using the same |
US8704362B2 (en) * | 2011-08-24 | 2014-04-22 | Panasonic Corporation | Resin-diamagnetic material composite structure |
WO2022030846A1 (ko) * | 2020-08-06 | 2022-02-10 | 자화전자(주) | 방열시트 및 이를 구비한 전자기기 |
WO2022182015A1 (ko) * | 2021-02-25 | 2022-09-01 | 삼성전자 주식회사 | 방열 부재 및 그를 포함하는 전자 장치 |
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