JP5608157B2 - 基板エッチングシステム及びプロセスの方法及び装置 - Google Patents

基板エッチングシステム及びプロセスの方法及び装置 Download PDF

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JP5608157B2
JP5608157B2 JP2011500951A JP2011500951A JP5608157B2 JP 5608157 B2 JP5608157 B2 JP 5608157B2 JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011500951 A JP2011500951 A JP 2011500951A JP 5608157 B2 JP5608157 B2 JP 5608157B2
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gas
chamber
flow
etching
substrate
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JP2011515855A (ja
JP2011515855A5 (enExample
Inventor
シャルマ ブイ パマシー
ジョン シー ファル
クハリド シラジュディン
エズラ アール ゴールド
ジェームズ ピー クルーズ
スコット オルシェウスキー
ロイ シー ナンゴイ
サラブジェート シン
ダグラス エー ブッフバーガー
ジャレッド エー リー
チュンレイ ザング
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2011500951A 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置 Active JP5608157B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Publications (3)

Publication Number Publication Date
JP2011515855A JP2011515855A (ja) 2011-05-19
JP2011515855A5 JP2011515855A5 (enExample) 2012-05-10
JP5608157B2 true JP5608157B2 (ja) 2014-10-15

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JP2011500951A Active JP5608157B2 (ja) 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置

Country Status (6)

Country Link
US (1) US20090272717A1 (enExample)
JP (1) JP5608157B2 (enExample)
KR (1) KR20100128333A (enExample)
CN (2) CN101978479A (enExample)
TW (1) TWI538045B (enExample)
WO (1) WO2009117565A2 (enExample)

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US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
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JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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WO2019226711A1 (en) * 2018-05-22 2019-11-28 Etx Corporation Method and apparatus for transfer of two-dimensional materials
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
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JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP2023547315A (ja) * 2020-10-23 2023-11-10 ラム リサーチ コーポレーション プラズマエッチングリアクタ内への気相堆積プロセスの統合
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Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
KR20100128333A (ko) 2010-12-07
TWI538045B (zh) 2016-06-11
CN102446739B (zh) 2016-01-20
US20090272717A1 (en) 2009-11-05
TW201005822A (en) 2010-02-01
WO2009117565A3 (en) 2009-11-12
CN102446739A (zh) 2012-05-09
CN101978479A (zh) 2011-02-16
WO2009117565A2 (en) 2009-09-24

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