KR20100128333A - 기판 에칭 시스템 및 프로세스의 방법 및 장치 - Google Patents

기판 에칭 시스템 및 프로세스의 방법 및 장치 Download PDF

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Publication number
KR20100128333A
KR20100128333A KR1020107023432A KR20107023432A KR20100128333A KR 20100128333 A KR20100128333 A KR 20100128333A KR 1020107023432 A KR1020107023432 A KR 1020107023432A KR 20107023432 A KR20107023432 A KR 20107023432A KR 20100128333 A KR20100128333 A KR 20100128333A
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KR
South Korea
Prior art keywords
gas
chamber
etching
substrate
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020107023432A
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English (en)
Korean (ko)
Inventor
샤마 브이. 파마티
존 씨. 파
칼리드 시라주딘
에즈라 알. 골드
제임스 피. 크루즈
스코트 올스제프스키
로이 씨. 난고이
사라브지트 싱
더글라스 에이. 부흐버거
제리드 에이. 이
춘레이 장
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20100128333A publication Critical patent/KR20100128333A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020107023432A 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치 Ceased KR20100128333A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05

Publications (1)

Publication Number Publication Date
KR20100128333A true KR20100128333A (ko) 2010-12-07

Family

ID=41091536

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107023432A Ceased KR20100128333A (ko) 2008-03-21 2009-03-19 기판 에칭 시스템 및 프로세스의 방법 및 장치

Country Status (6)

Country Link
US (1) US20090272717A1 (enExample)
JP (1) JP5608157B2 (enExample)
KR (1) KR20100128333A (enExample)
CN (2) CN101978479A (enExample)
TW (1) TWI538045B (enExample)
WO (1) WO2009117565A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021539A1 (ja) * 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
US8501629B2 (en) * 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
KR101932250B1 (ko) * 2011-06-30 2019-03-20 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
WO2019226711A1 (en) * 2018-05-22 2019-11-28 Etx Corporation Method and apparatus for transfer of two-dimensional materials
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP2023547315A (ja) * 2020-10-23 2023-11-10 ラム リサーチ コーポレーション プラズマエッチングリアクタ内への気相堆積プロセスの統合
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange
CN119905397A (zh) * 2023-10-27 2025-04-29 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143427A (ja) * 1985-12-18 1987-06-26 Hitachi Ltd 処理ガス供給装置
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6462481B1 (en) * 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6409933B1 (en) * 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) * 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
FR2834382B1 (fr) * 2002-01-03 2005-03-18 Cit Alcatel Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US6849554B2 (en) * 2002-05-01 2005-02-01 Applied Materials, Inc. Method of etching a deep trench having a tapered profile in silicon
US6846746B2 (en) * 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
FR2842387B1 (fr) * 2002-07-11 2005-07-08 Cit Alcatel Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre
US7074723B2 (en) * 2002-08-02 2006-07-11 Applied Materials, Inc. Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system
US6924235B2 (en) * 2002-08-16 2005-08-02 Unaxis Usa Inc. Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US6900133B2 (en) * 2002-09-18 2005-05-31 Applied Materials, Inc Method of etching variable depth features in a crystalline substrate
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US20040157457A1 (en) * 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
KR100549204B1 (ko) * 2003-10-14 2006-02-02 주식회사 리드시스템 실리콘 이방성 식각 방법
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
KR100655445B1 (ko) * 2005-10-04 2006-12-08 삼성전자주식회사 플라즈마 처리 장치 및 방법, 그리고 반도체 제조 설비
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2008205436A (ja) * 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
JP2009182059A (ja) * 2008-01-29 2009-08-13 Toshiba Corp ドライエッチング方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170110035A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110039A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
KR20170110036A (ko) * 2016-03-22 2017-10-10 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법

Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
TWI538045B (zh) 2016-06-11
CN102446739B (zh) 2016-01-20
JP5608157B2 (ja) 2014-10-15
US20090272717A1 (en) 2009-11-05
TW201005822A (en) 2010-02-01
WO2009117565A3 (en) 2009-11-12
CN102446739A (zh) 2012-05-09
CN101978479A (zh) 2011-02-16
WO2009117565A2 (en) 2009-09-24

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