CN101978479A - 基材蚀刻系统与制程的方法及设备 - Google Patents

基材蚀刻系统与制程的方法及设备 Download PDF

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Publication number
CN101978479A
CN101978479A CN2009801103642A CN200980110364A CN101978479A CN 101978479 A CN101978479 A CN 101978479A CN 2009801103642 A CN2009801103642 A CN 2009801103642A CN 200980110364 A CN200980110364 A CN 200980110364A CN 101978479 A CN101978479 A CN 101978479A
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China
Prior art keywords
gas
chamber
flow
bias power
etching
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Pending
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CN2009801103642A
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English (en)
Chinese (zh)
Inventor
夏尔马·V·帕马斯
乔恩·C·法
科哈伊德·西拉朱迪茵
伊兹拉·R·高德
詹姆斯·P·克鲁斯
斯科特·奥尔斯则维斯基
罗伊·C·南古伊
萨拉弗野特·辛加
道格拉斯·A·布池贝尔格尔
札瑞德·A·李
张春雷
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201110402772.4A priority Critical patent/CN102446739B/zh
Publication of CN101978479A publication Critical patent/CN101978479A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Drying Of Semiconductors (AREA)
CN2009801103642A 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备 Pending CN101978479A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110402772.4A CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Related Child Applications (1)

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CN201110402772.4A Division CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

Publications (1)

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CN101978479A true CN101978479A (zh) 2011-02-16

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CN2009801103642A Pending CN101978479A (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备
CN201110402772.4A Active CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

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US (1) US20090272717A1 (enExample)
JP (1) JP5608157B2 (enExample)
KR (1) KR20100128333A (enExample)
CN (2) CN101978479A (enExample)
TW (1) TWI538045B (enExample)
WO (1) WO2009117565A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112469665A (zh) * 2018-05-22 2021-03-09 Etx公司 用于二维材料的转移的方法和装置
WO2025087254A1 (zh) * 2023-10-27 2025-05-01 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备
CN121065642A (zh) * 2024-06-04 2025-12-05 上海原子启智半导体设备有限公司 用于半导体工艺的快速气体输送系统
TWI929537B (zh) 2023-10-27 2026-06-21 大陸商中微半導體設備（上海）股份有限公司 電漿工藝方法及電漿處理設備

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021539A1 (ja) * 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
US8501629B2 (en) * 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
JP6068462B2 (ja) * 2011-06-30 2017-01-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
JP6859426B2 (ja) 2018-08-13 2021-04-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジリングの位置決めおよびセンタリング機構を組み込んだプラズマシース調整のための交換可能および／または折りたたみ式エッジリングアセンブリ
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
TWM602283U (zh) 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
JP7752172B2 (ja) 2020-10-05 2025-10-09 ラム リサーチ コーポレーション プラズマ処理システム用の可動エッジリング
KR20230088869A (ko) * 2020-10-23 2023-06-20 램 리써치 코포레이션 플라즈마 에칭 반응기 내로 증기 증착 프로세스의 통합
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange
TWI918362B (zh) * 2025-01-06 2026-03-11 旭宇騰精密科技股份有限公司 晶圓處理設備及晶圓處理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
US20030207579A1 (en) * 2002-05-01 2003-11-06 Michael Rattner Method of etching a deep trench having a tapered profile in silicon
US20040092118A1 (en) * 2002-08-16 2004-05-13 David Johnson Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143427A (ja) * 1985-12-18 1987-06-26 Hitachi Ltd 処理ガス供給装置
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6694915B1 (en) * 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6462481B1 (en) * 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6409933B1 (en) * 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
FR2834382B1 (fr) * 2002-01-03 2005-03-18 Cit Alcatel Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US6846746B2 (en) * 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
FR2842387B1 (fr) * 2002-07-11 2005-07-08 Cit Alcatel Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre
US7074723B2 (en) * 2002-08-02 2006-07-11 Applied Materials, Inc. Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system
US6900133B2 (en) * 2002-09-18 2005-05-31 Applied Materials, Inc Method of etching variable depth features in a crystalline substrate
US20040157457A1 (en) * 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
KR100549204B1 (ko) * 2003-10-14 2006-02-02 주식회사 리드시스템 실리콘 이방성 식각 방법
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
KR100655445B1 (ko) * 2005-10-04 2006-12-08 삼성전자주식회사 플라즈마 처리 장치 및 방법, 그리고 반도체 제조 설비
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2008205436A (ja) * 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
JP2009182059A (ja) * 2008-01-29 2009-08-13 Toshiba Corp ドライエッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
US20030207579A1 (en) * 2002-05-01 2003-11-06 Michael Rattner Method of etching a deep trench having a tapered profile in silicon
US20040092118A1 (en) * 2002-08-16 2004-05-13 David Johnson Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112469665A (zh) * 2018-05-22 2021-03-09 Etx公司 用于二维材料的转移的方法和装置
CN112469665B (zh) * 2018-05-22 2023-10-17 Etx公司 用于二维材料的转移的方法和装置
WO2025087254A1 (zh) * 2023-10-27 2025-05-01 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备
TWI929537B (zh) 2023-10-27 2026-06-21 大陸商中微半導體設備（上海）股份有限公司 電漿工藝方法及電漿處理設備
CN121065642A (zh) * 2024-06-04 2025-12-05 上海原子启智半导体设备有限公司 用于半导体工艺的快速气体输送系统

Also Published As

Publication number Publication date
TWI538045B (zh) 2016-06-11
JP5608157B2 (ja) 2014-10-15
WO2009117565A2 (en) 2009-09-24
JP2011515855A (ja) 2011-05-19
CN102446739A (zh) 2012-05-09
TW201005822A (en) 2010-02-01
CN102446739B (zh) 2016-01-20
US20090272717A1 (en) 2009-11-05
WO2009117565A3 (en) 2009-11-12
KR20100128333A (ko) 2010-12-07

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Application publication date: 20110216