CN101978479A - 基材蚀刻系统与制程的方法及设备 - Google Patents

基材蚀刻系统与制程的方法及设备 Download PDF

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Publication number
CN101978479A
CN101978479A CN2009801103642A CN200980110364A CN101978479A CN 101978479 A CN101978479 A CN 101978479A CN 2009801103642 A CN2009801103642 A CN 2009801103642A CN 200980110364 A CN200980110364 A CN 200980110364A CN 101978479 A CN101978479 A CN 101978479A
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CN
China
Prior art keywords
gas
chamber
flow
bias power
etching
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Pending
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CN2009801103642A
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English (en)
Chinese (zh)
Inventor
夏尔马·V·帕马斯
乔恩·C·法
科哈伊德·西拉朱迪茵
伊兹拉·R·高德
詹姆斯·P·克鲁斯
斯科特·奥尔斯则维斯基
罗伊·C·南古伊
萨拉弗野特·辛加
道格拉斯·A·布池贝尔格尔
札瑞德·A·李
张春雷
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201110402772.4A priority Critical patent/CN102446739B/zh
Publication of CN101978479A publication Critical patent/CN101978479A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
CN2009801103642A 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备 Pending CN101978479A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110402772.4A CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201110402772.4A Division CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

Publications (1)

Publication Number Publication Date
CN101978479A true CN101978479A (zh) 2011-02-16

Family

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Family Applications (2)

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CN2009801103642A Pending CN101978479A (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备
CN201110402772.4A Active CN102446739B (zh) 2008-03-21 2009-03-19 基材蚀刻系统与制程的方法及设备

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Country Status (6)

Country Link
US (1) US20090272717A1 (enExample)
JP (1) JP5608157B2 (enExample)
KR (1) KR20100128333A (enExample)
CN (2) CN101978479A (enExample)
TW (1) TWI538045B (enExample)
WO (1) WO2009117565A2 (enExample)

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WO2025087254A1 (zh) * 2023-10-27 2025-05-01 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备

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US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
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US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (ja) * 2014-03-17 2017-03-22 株式会社東芝 プラズマダイシング方法およびプラズマダイシング装置
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US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
TWI701357B (zh) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 用於膜沉積的脈衝化電漿
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP2023547315A (ja) * 2020-10-23 2023-11-10 ラム リサーチ コーポレーション プラズマエッチングリアクタ内への気相堆積プロセスの統合
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

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Publication number Priority date Publication date Assignee Title
CN112469665A (zh) * 2018-05-22 2021-03-09 Etx公司 用于二维材料的转移的方法和装置
CN112469665B (zh) * 2018-05-22 2023-10-17 Etx公司 用于二维材料的转移的方法和装置
WO2025087254A1 (zh) * 2023-10-27 2025-05-01 中微半导体设备(上海)股份有限公司 一种等离子体工艺方法及等离子体处理设备

Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
KR20100128333A (ko) 2010-12-07
TWI538045B (zh) 2016-06-11
CN102446739B (zh) 2016-01-20
JP5608157B2 (ja) 2014-10-15
US20090272717A1 (en) 2009-11-05
TW201005822A (en) 2010-02-01
WO2009117565A3 (en) 2009-11-12
CN102446739A (zh) 2012-05-09
WO2009117565A2 (en) 2009-09-24

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Application publication date: 20110216