TWI538045B - 基材蝕刻系統與製程之方法及設備 - Google Patents

基材蝕刻系統與製程之方法及設備 Download PDF

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Publication number
TWI538045B
TWI538045B TW098109255A TW98109255A TWI538045B TW I538045 B TWI538045 B TW I538045B TW 098109255 A TW098109255 A TW 098109255A TW 98109255 A TW98109255 A TW 98109255A TW I538045 B TWI538045 B TW I538045B
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TW
Taiwan
Prior art keywords
gas
chamber
etching
flow
bias power
Prior art date
Application number
TW098109255A
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English (en)
Chinese (zh)
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TW201005822A (en
Inventor
帕馬西沙瑪Ｖ
法爾瓊Ｃ
瑟拉裘汀卡利德
古德愛爾羅伯
克魯斯詹姆士Ｐ
歐玆烏斯基史考特
那歌力羅伊Ｃ
辛沙拉傑特
布卻柏格道格拉斯二世Ａ
李傑瑞Ａ
張春雷
Original Assignee
應用材料股份有限公司
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201005822A publication Critical patent/TW201005822A/zh
Application granted granted Critical
Publication of TWI538045B publication Critical patent/TWI538045B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW098109255A 2008-03-21 2009-03-20 基材蝕刻系統與製程之方法及設備 TWI538045B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US4057008P 2008-03-28 2008-03-28
US9482008P 2008-09-05 2008-09-05

Publications (2)

Publication Number Publication Date
TW201005822A TW201005822A (en) 2010-02-01
TWI538045B true TWI538045B (zh) 2016-06-11

Family

ID=41091536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098109255A TWI538045B (zh) 2008-03-21 2009-03-20 基材蝕刻系統與製程之方法及設備

Country Status (6)

Country Link
US (1) US20090272717A1 (enExample)
JP (1) JP5608157B2 (enExample)
KR (1) KR20100128333A (enExample)
CN (2) CN101978479A (enExample)
TW (1) TWI538045B (enExample)
WO (1) WO2009117565A2 (enExample)

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Also Published As

Publication number Publication date
JP2011515855A (ja) 2011-05-19
KR20100128333A (ko) 2010-12-07
CN102446739B (zh) 2016-01-20
JP5608157B2 (ja) 2014-10-15
US20090272717A1 (en) 2009-11-05
TW201005822A (en) 2010-02-01
WO2009117565A3 (en) 2009-11-12
CN102446739A (zh) 2012-05-09
CN101978479A (zh) 2011-02-16
WO2009117565A2 (en) 2009-09-24

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