JP5606458B2 - フォトニックデバイスのための透明基板 - Google Patents
フォトニックデバイスのための透明基板 Download PDFInfo
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- JP5606458B2 JP5606458B2 JP2011550580A JP2011550580A JP5606458B2 JP 5606458 B2 JP5606458 B2 JP 5606458B2 JP 2011550580 A JP2011550580 A JP 2011550580A JP 2011550580 A JP2011550580 A JP 2011550580A JP 5606458 B2 JP5606458 B2 JP 5606458B2
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- 239000000758 substrate Substances 0.000 title claims description 182
- 238000000576 coating method Methods 0.000 claims description 151
- 239000011248 coating agent Substances 0.000 claims description 145
- 229910052751 metal Inorganic materials 0.000 claims description 143
- 239000002184 metal Substances 0.000 claims description 143
- 230000005540 biological transmission Effects 0.000 claims description 113
- 229910052725 zinc Inorganic materials 0.000 claims description 69
- 229910052782 aluminium Inorganic materials 0.000 claims description 59
- 238000003780 insertion Methods 0.000 claims description 50
- 230000037431 insertion Effects 0.000 claims description 49
- 230000003287 optical effect Effects 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 229910052719 titanium Inorganic materials 0.000 claims description 40
- 229910052726 zirconium Inorganic materials 0.000 claims description 37
- 229910052804 chromium Inorganic materials 0.000 claims description 36
- 229910052735 hafnium Inorganic materials 0.000 claims description 34
- 229910052758 niobium Inorganic materials 0.000 claims description 34
- 229910052720 vanadium Inorganic materials 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 30
- 229910052750 molybdenum Inorganic materials 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 26
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 229910052718 tin Inorganic materials 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 229910052715 tantalum Inorganic materials 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 19
- 229910052738 indium Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 150000002739 metals Chemical class 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 11
- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 475
- 239000011701 zinc Substances 0.000 description 117
- 239000010936 titanium Substances 0.000 description 53
- 239000011521 glass Substances 0.000 description 42
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 32
- 239000010955 niobium Substances 0.000 description 32
- 230000004888 barrier function Effects 0.000 description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 28
- 239000012044 organic layer Substances 0.000 description 20
- 229910052748 manganese Inorganic materials 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 235000014692 zinc oxide Nutrition 0.000 description 15
- 230000008901 benefit Effects 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000011787 zinc oxide Substances 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 13
- 229910052763 palladium Inorganic materials 0.000 description 12
- 238000005424 photoluminescence Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- 229910052741 iridium Inorganic materials 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- 229910052790 beryllium Inorganic materials 0.000 description 8
- 229910052793 cadmium Inorganic materials 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000005361 soda-lime glass Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 229910052789 astatine Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 229910001120 nichrome Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- XMUIKZODBRYDCK-UHFFFAOYSA-N 2,3,4,5,6,9-hexahydro-1h-1,4,7-triazonine Chemical compound C1CNCC=NCCN1 XMUIKZODBRYDCK-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- PWFFDTZNRAEFIY-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1C1=CC(N)=CC=C1C1=CC=C(N)C=C1 PWFFDTZNRAEFIY-UHFFFAOYSA-N 0.000 description 1
- WPUSEOSICYGUEW-UHFFFAOYSA-N 4-[4-(4-methoxy-n-(4-methoxyphenyl)anilino)phenyl]-n,n-bis(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WPUSEOSICYGUEW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 229910007667 ZnOx Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- YJVLWFXZVBOFRZ-UHFFFAOYSA-N titanium zinc Chemical compound [Ti].[Zn] YJVLWFXZVBOFRZ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE200900099 | 2009-02-19 | ||
| BEBE2009/0097 | 2009-02-19 | ||
| BE200900095 | 2009-02-19 | ||
| BE200900097 | 2009-02-19 | ||
| BE200900096 | 2009-02-19 | ||
| BEBE2009/0095 | 2009-02-19 | ||
| BEBE2009/0098 | 2009-02-19 | ||
| BE200900098 | 2009-02-19 | ||
| BEBE2009/0096 | 2009-02-19 | ||
| BEBE2009/0099 | 2009-02-19 | ||
| BEBE2009/0094 | 2009-02-19 | ||
| BE200900094 | 2009-02-19 | ||
| BEBE2009/0548 | 2009-09-08 | ||
| BE200900548 | 2009-09-08 | ||
| PCT/EP2010/052147 WO2010094775A1 (fr) | 2009-02-19 | 2010-02-19 | Susbstrat transparent pour dispositifs photoniques |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014171080A Division JP2015028940A (ja) | 2009-02-19 | 2014-08-26 | フォトニックデバイスのための透明基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012518261A JP2012518261A (ja) | 2012-08-09 |
| JP2012518261A5 JP2012518261A5 (enExample) | 2013-02-28 |
| JP5606458B2 true JP5606458B2 (ja) | 2014-10-15 |
Family
ID=42167678
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011550580A Expired - Fee Related JP5606458B2 (ja) | 2009-02-19 | 2010-02-19 | フォトニックデバイスのための透明基板 |
| JP2014171080A Pending JP2015028940A (ja) | 2009-02-19 | 2014-08-26 | フォトニックデバイスのための透明基板 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014171080A Pending JP2015028940A (ja) | 2009-02-19 | 2014-08-26 | フォトニックデバイスのための透明基板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110297988A1 (enExample) |
| EP (1) | EP2399306A1 (enExample) |
| JP (2) | JP5606458B2 (enExample) |
| CN (1) | CN102326274A (enExample) |
| EA (1) | EA201101212A1 (enExample) |
| WO (1) | WO2010094775A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092972A1 (de) * | 2011-01-06 | 2012-07-12 | Heliatek Gmbh | Elektronisches oder optoelektronisches bauelement mit organischen schichten |
| GB201101910D0 (en) * | 2011-02-04 | 2011-03-23 | Pilkington Group Ltd | Growth layer for the photovol taic applications |
| FR2976729B1 (fr) * | 2011-06-16 | 2013-06-07 | Saint Gobain | Substrat a electrode pour dispositif oled et un tel dispositif oled |
| BE1020130A3 (fr) * | 2011-08-04 | 2013-05-07 | Agc Glass Europe | Structure comprenant une pluralite de modules optoelectroniques. |
| DE102012200224A1 (de) * | 2012-01-10 | 2013-07-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, verfahren zum herstellen eines optoelektronischen bauelements, vorrichtung zum abtrennen eines raumes und möbelstück |
| BE1020735A3 (fr) * | 2012-05-29 | 2014-04-01 | Agc Glass Europe | Substrat verrier texture a proprietes optiques ameliorees pour dispositif optoelectronique. |
| CN103713761A (zh) * | 2012-10-09 | 2014-04-09 | 联胜（中国）科技有限公司 | 触控板以及触控显示装置 |
| WO2014192902A1 (ja) * | 2013-05-31 | 2014-12-04 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
| CN107369761B (zh) * | 2017-08-10 | 2020-04-14 | 武汉华星光电技术有限公司 | 一种柔性显示面板及其基板pi层结构、制备方法 |
| WO2019079679A1 (en) | 2017-10-20 | 2019-04-25 | Magic Leap, Inc. | CONFIGURING OPTICAL LAYERS IN PRINTING LITHOGRAPHY METHODS |
| CN113631964B (zh) * | 2019-01-24 | 2024-05-31 | 康宁股份有限公司 | 具有低反射率电极结构的液体透镜和液体透镜制品 |
| CN111628102A (zh) * | 2020-05-18 | 2020-09-04 | 武汉华星光电半导体显示技术有限公司 | 一种微腔电极结构及有机电致发光器件 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2728559B1 (fr) * | 1994-12-23 | 1997-01-31 | Saint Gobain Vitrage | Substrats en verre revetus d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire |
| JPH10100303A (ja) * | 1996-06-07 | 1998-04-21 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板およびそれを用いた表示素子 |
| JPH1069984A (ja) * | 1996-06-18 | 1998-03-10 | Mitsui Petrochem Ind Ltd | 有機エレクトロルミネッセンス素子 |
| TW385375B (en) * | 1996-07-26 | 2000-03-21 | Asahi Glass Co Ltd | Transparent conductive film and forming method for transparent electrode |
| EP0963960A1 (fr) * | 1998-06-08 | 1999-12-15 | Glaverbel | Substrat transparent revêtu d'une couche d'argent |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| JP4468546B2 (ja) * | 2000-04-13 | 2010-05-26 | 三井化学株式会社 | 透明電極 |
| JP4052941B2 (ja) * | 2000-09-29 | 2008-02-27 | 日本板硝子株式会社 | 低放射率透明積層体 |
| US6984934B2 (en) | 2001-07-10 | 2006-01-10 | The Trustees Of Princeton University | Micro-lens arrays for display intensity enhancement |
| US6872472B2 (en) * | 2002-02-15 | 2005-03-29 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
| JP2003288993A (ja) * | 2002-03-27 | 2003-10-10 | Tokai Rubber Ind Ltd | 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子 |
| WO2003096080A2 (en) * | 2002-05-08 | 2003-11-20 | Target Technology Company, Llc. | Silver alloy thin film reflector and transparent electrical conductor |
| US20040140757A1 (en) * | 2003-01-17 | 2004-07-22 | Eastman Kodak Company | Microcavity OLED devices |
| JP2005044778A (ja) * | 2003-07-19 | 2005-02-17 | Samsung Sdi Co Ltd | 電界発光素子 |
| US7268485B2 (en) * | 2003-10-07 | 2007-09-11 | Eastman Kodak Company | White-emitting microcavity OLED device |
| US8427043B2 (en) * | 2006-02-22 | 2013-04-23 | Saint-Gobain Glass France | Organic light-emitting device and use of a transparent electroconductive layer in an organic light-emitting device |
| KR101700286B1 (ko) * | 2006-09-07 | 2017-02-13 | 쌩-고벵 글래스 프랑스 | 유기 발광 소자용 기판, 상기 기판 및 유기 발광 소자의 제조 방법 및 용도 |
| US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| EP2090139A2 (fr) * | 2006-11-17 | 2009-08-19 | Saint-Gobain Glass France | Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant |
| FR2913146B1 (fr) * | 2007-02-23 | 2009-05-01 | Saint Gobain | Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications |
| FR2919110A1 (fr) * | 2007-07-16 | 2009-01-23 | Saint Gobain | Substrat de face avant d'ecran plasma, utilisation et procede de fabrication |
-
2010
- 2010-02-19 JP JP2011550580A patent/JP5606458B2/ja not_active Expired - Fee Related
- 2010-02-19 US US13/201,765 patent/US20110297988A1/en not_active Abandoned
- 2010-02-19 CN CN2010800086873A patent/CN102326274A/zh active Pending
- 2010-02-19 EA EA201101212A patent/EA201101212A1/ru unknown
- 2010-02-19 EP EP10705857A patent/EP2399306A1/fr not_active Withdrawn
- 2010-02-19 WO PCT/EP2010/052147 patent/WO2010094775A1/fr not_active Ceased
-
2014
- 2014-08-26 JP JP2014171080A patent/JP2015028940A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010094775A1 (fr) | 2010-08-26 |
| JP2012518261A (ja) | 2012-08-09 |
| EP2399306A1 (fr) | 2011-12-28 |
| US20110297988A1 (en) | 2011-12-08 |
| CN102326274A (zh) | 2012-01-18 |
| JP2015028940A (ja) | 2015-02-12 |
| EA201101212A1 (ru) | 2012-03-30 |
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