JP5599203B2 - 圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ - Google Patents

圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ Download PDF

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JP5599203B2
JP5599203B2 JP2010045907A JP2010045907A JP5599203B2 JP 5599203 B2 JP5599203 B2 JP 5599203B2 JP 2010045907 A JP2010045907 A JP 2010045907A JP 2010045907 A JP2010045907 A JP 2010045907A JP 5599203 B2 JP5599203 B2 JP 5599203B2
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Japan
Prior art keywords
piezoelectric material
piezoelectric
substrate
thin film
piezoelectric element
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JP2010045907A
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English (en)
Japanese (ja)
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JP2011181776A5 (cg-RX-API-DMAC10.html
JP2011181776A (ja
Inventor
純 久保田
憲一 武田
潤平 林
幹夫 島田
祐一 島川
正樹 東
嘉孝 中村
正徳 河合
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Canon Inc
Kyoto University
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Canon Inc
Kyoto University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Inc, Kyoto University filed Critical Canon Inc
Priority to JP2010045907A priority Critical patent/JP5599203B2/ja
Priority to US13/581,429 priority patent/US9461238B2/en
Priority to PCT/JP2011/055153 priority patent/WO2011108732A2/en
Priority to EP11709223.9A priority patent/EP2537194B1/en
Priority to KR1020127024730A priority patent/KR101486127B1/ko
Publication of JP2011181776A publication Critical patent/JP2011181776A/ja
Publication of JP2011181776A5 publication Critical patent/JP2011181776A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8561—Bismuth-based oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/10—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
    • H02N2/106—Langevin motors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/10—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
    • H02N2/16—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors using travelling waves, i.e. Rayleigh surface waves
    • H02N2/163—Motors with ring stator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2010045907A 2010-03-02 2010-03-02 圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ Active JP5599203B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010045907A JP5599203B2 (ja) 2010-03-02 2010-03-02 圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ
US13/581,429 US9461238B2 (en) 2010-03-02 2011-02-28 Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
PCT/JP2011/055153 WO2011108732A2 (en) 2010-03-02 2011-02-28 Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
EP11709223.9A EP2537194B1 (en) 2010-03-02 2011-02-28 Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
KR1020127024730A KR101486127B1 (ko) 2010-03-02 2011-02-28 압전 박막, 압전 소자, 및 그의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010045907A JP5599203B2 (ja) 2010-03-02 2010-03-02 圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ

Publications (3)

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JP2011181776A JP2011181776A (ja) 2011-09-15
JP2011181776A5 JP2011181776A5 (cg-RX-API-DMAC10.html) 2013-04-18
JP5599203B2 true JP5599203B2 (ja) 2014-10-01

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US (1) US9461238B2 (cg-RX-API-DMAC10.html)
EP (1) EP2537194B1 (cg-RX-API-DMAC10.html)
JP (1) JP5599203B2 (cg-RX-API-DMAC10.html)
KR (1) KR101486127B1 (cg-RX-API-DMAC10.html)
WO (1) WO2011108732A2 (cg-RX-API-DMAC10.html)

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US9356224B2 (en) * 2009-10-30 2016-05-31 The Regents Of The University Of California Thin film bismuth iron oxides useful for piezoelectric devices
JP5610133B2 (ja) * 2010-05-07 2014-10-22 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、及び圧電素子
JP5991457B2 (ja) * 2010-11-16 2016-09-14 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置及び圧電素子並びに圧電材料
JP5909336B2 (ja) 2011-08-23 2016-04-26 矢崎総業株式会社 コネクタ端子の製造方法
CN103014625B (zh) * 2012-12-28 2014-08-13 东南大学 制备四方相室温多铁性材料BiFeO3的方法
WO2014157023A1 (ja) * 2013-03-28 2014-10-02 Tdk株式会社 磁器組成物
JP6079515B2 (ja) * 2013-09-09 2017-02-15 富士通株式会社 二次イオン質量分析装置
FR3018389B1 (fr) * 2014-03-06 2017-09-01 St Microelectronics Sa Procede de fabrication de lamelles bistables de courbures differentes
JP6398771B2 (ja) * 2014-03-31 2018-10-03 Tdk株式会社 圧電組成物および圧電素子
JP6390170B2 (ja) 2014-05-28 2018-09-19 株式会社リコー 電気−機械変換素子、電気−機械変換素子の製造方法、液滴吐出ヘッド、液滴吐出装置
JP6525255B2 (ja) * 2015-05-28 2019-06-05 株式会社リコー 電気機械変換素子、電気機械変換素子の製造方法、液滴吐出ヘッド及び液滴吐出装置
NL2016335B1 (en) * 2016-02-29 2017-09-11 Univ Delft Tech Atomic scale data storage device by means of atomic vacancy manipulation.
JP6146599B2 (ja) * 2016-07-26 2017-06-14 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー
JP2018186227A (ja) * 2017-04-27 2018-11-22 Tdk株式会社 積層構造体及びスピン変調素子
JP2018206855A (ja) * 2017-05-31 2018-12-27 Tdk株式会社 積層構造体及びスピン変調素子
CN108664913B (zh) * 2018-05-04 2020-04-07 京东方科技集团股份有限公司 一种传感器及其制备方法、面板和识别装置
CN111341904B (zh) * 2020-03-04 2023-06-23 济南晶正电子科技有限公司 一种压电薄膜及其制备方法、确定压电晶轴方向的方法
US12052922B2 (en) 2020-03-26 2024-07-30 Tdk Corporation Piezoelectric thin film, piezoelectric thin film element and piezoelectric transducer
JP7579109B2 (ja) * 2020-10-28 2024-11-07 Tdk株式会社 圧電薄膜、圧電薄膜素子及び圧電トランスデューサ
CN112813385B (zh) * 2020-12-24 2022-06-14 中国科学院上海硅酸盐研究所 一种c轴择优取向的铌酸铋钙薄膜及其制备方法
CN113193107B (zh) * 2021-04-28 2023-02-28 江西省纳米技术研究院 一种单原子压电材料及其制备方法与应用
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件

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JP2010045907A (ja) 2008-08-12 2010-02-25 Seiko Epson Corp 誘起電圧波形テーブル作成装置及び誘起電圧波形テーブルの作成法
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JP5885931B2 (ja) 2010-03-15 2016-03-16 キヤノン株式会社 ビスマス鉄酸化物粉体、その製造方法、誘電体セラミックス、圧電素子、液体吐出ヘッドおよび超音波モータ

Also Published As

Publication number Publication date
EP2537194B1 (en) 2016-08-17
EP2537194A2 (en) 2012-12-26
KR20120137375A (ko) 2012-12-20
WO2011108732A2 (en) 2011-09-09
KR101486127B1 (ko) 2015-01-23
JP2011181776A (ja) 2011-09-15
US20120319533A1 (en) 2012-12-20
WO2011108732A3 (en) 2012-01-12
WO2011108732A4 (en) 2012-04-19
US9461238B2 (en) 2016-10-04

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