FR3018389B1 - Procede de fabrication de lamelles bistables de courbures differentes - Google Patents
Procede de fabrication de lamelles bistables de courbures differentesInfo
- Publication number
- FR3018389B1 FR3018389B1 FR1451833A FR1451833A FR3018389B1 FR 3018389 B1 FR3018389 B1 FR 3018389B1 FR 1451833 A FR1451833 A FR 1451833A FR 1451833 A FR1451833 A FR 1451833A FR 3018389 B1 FR3018389 B1 FR 3018389B1
- Authority
- FR
- France
- Prior art keywords
- different curves
- manufacturing
- blades
- bistable blades
- manufacturing bistable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
- F03G—SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR
- F03G7/00—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for
- F03G7/06—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/08—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases only one element being diffused
- C23C10/10—Chromising
- C23C10/12—Chromising of ferrous surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Micromachines (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451833A FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
US14/634,454 US10312431B2 (en) | 2014-03-06 | 2015-02-27 | Method of manufacturing bistable strips having different curvatures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451833A FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3018389A1 FR3018389A1 (fr) | 2015-09-11 |
FR3018389B1 true FR3018389B1 (fr) | 2017-09-01 |
Family
ID=51210513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1451833A Active FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
Country Status (2)
Country | Link |
---|---|
US (1) | US10312431B2 (fr) |
FR (1) | FR3018389B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108897965B (zh) * | 2018-07-10 | 2022-05-03 | 浙江工业大学 | 一种多稳态复合材料壳的设计方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR911E (fr) * | 1902-01-27 | 1903-04-23 | Chaudieres Lagosse Des | Appareil servant à fixer les tubes dans les plaques tubulaires |
US2988911A (en) * | 1957-08-02 | 1961-06-20 | Helen M Carter | Automatic door lock mechanism for safes, strongboxes and other receptacles |
US4083220A (en) * | 1975-04-21 | 1978-04-11 | Hitachi, Ltd. | Sub-zero temperature plastic working process for metal |
JP2819141B2 (ja) * | 1989-02-13 | 1998-10-30 | 株式会社エー・アンド・デイ | 定速排気装置および定速排気装置の制御方法 |
US5471721A (en) * | 1993-02-23 | 1995-12-05 | Research Corporation Technologies, Inc. | Method for making monolithic prestressed ceramic devices |
FR2753565B1 (fr) * | 1996-09-13 | 1998-11-27 | Thomson Csf | Dispositif de commutation electrique et dispositif d'affichage utilisant ce dispositif de commutation |
JP2963993B1 (ja) * | 1998-07-24 | 1999-10-18 | 工業技術院長 | 超微粒子成膜法 |
JP2001026110A (ja) * | 1999-07-07 | 2001-01-30 | Samsung Electro Mech Co Ltd | セラミック粉末とポリビニリデンフルオライドとの混合体を利用した圧電/電歪マイクロアクチュエータ及びその製造方法 |
JP2002004043A (ja) * | 2000-06-19 | 2002-01-09 | Matsushita Electric Ind Co Ltd | 曲面を有する構造体及びその製造方法 |
US6674291B1 (en) * | 2000-10-30 | 2004-01-06 | Agere Systems Guardian Corp. | Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom |
US6866730B2 (en) * | 2003-03-21 | 2005-03-15 | General Motors Corporation | Metallic-based adhesion materials |
US7212082B2 (en) * | 2003-12-19 | 2007-05-01 | Ube Industries, Ltd. | Method of manufacturing piezoelectric thin film device and piezoelectric thin film device |
US20060099440A1 (en) * | 2004-11-09 | 2006-05-11 | Purusottam Sahoo | High energy plasma arc process |
WO2008084578A1 (fr) * | 2006-12-25 | 2008-07-17 | Murata Manufacturing Co., Ltd. | Résonateur en film mince piézoélectrique |
JP5471612B2 (ja) * | 2009-06-22 | 2014-04-16 | 日立金属株式会社 | 圧電性薄膜素子の製造方法及び圧電薄膜デバイスの製造方法 |
JP5599203B2 (ja) * | 2010-03-02 | 2014-10-01 | キヤノン株式会社 | 圧電薄膜、圧電素子、圧電素子の製造方法、液体吐出ヘッドおよび超音波モータ |
KR101664853B1 (ko) * | 2010-04-15 | 2016-10-12 | 코웨이 주식회사 | 래치 밸브 및 이를 이용한 유량 조절 장치 |
US20130241939A1 (en) * | 2012-03-16 | 2013-09-19 | Qualcomm Mems Technologies, Inc. | High capacitance density metal-insulator-metal capacitors |
FR2988911A1 (fr) | 2012-04-02 | 2013-10-04 | St Microelectronics Crolles 2 | Plaque incurvee et son procede de fabrication |
FR2988912A1 (fr) * | 2012-04-02 | 2013-10-04 | St Microelectronics Crolles 2 | Dispositif de recuperation d'energie |
-
2014
- 2014-03-06 FR FR1451833A patent/FR3018389B1/fr active Active
-
2015
- 2015-02-27 US US14/634,454 patent/US10312431B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3018389A1 (fr) | 2015-09-11 |
US10312431B2 (en) | 2019-06-04 |
US20150255705A1 (en) | 2015-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102016200026B8 (de) | Wafer-Herstellungsverfahren | |
DK3140393T3 (da) | Fremstillingsmetode for voksne leverstamceller | |
FR3023286B1 (fr) | Procede de fabrication de tetrafluoropropene | |
FR3018308B1 (fr) | Secteur de stator pour turbomachine et son procede de fabrication | |
FR3032314B1 (fr) | Actionneur de positionnement et procede de fabrication | |
ES2864754T8 (es) | Método de producción de metionina | |
DK3174988T3 (da) | Fremgangsmåde til fremstilling af mælkesyre | |
BR112016027652A2 (pt) | Método para produzir tiametoxam | |
DK3166927T3 (da) | Fremgangsmåde til fremstilling af 4-alkoxy-3-hydroxy-picolinsyre | |
SG11201705232YA (en) | Resonator manufacturing method | |
DK3166923T3 (da) | Fremgangsmåde til fremstilling af substituerede phenylalkaner | |
FR3020361B1 (fr) | Procede de fabrication de verre mince | |
EP3231898A4 (fr) | Procédé permettant de fabriquer des composants électroformés | |
DK3206886T3 (da) | Fremgangsmåde til at fremstille tredimensionelle strukturelle overflader | |
DK2923836T3 (da) | Fremgangsmåde til fremstilling af trykkeskabelon til teknisk trykning | |
TWI562220B (en) | Manufacturing method of semiconductor structure | |
FR3018631B1 (fr) | Caloduc et son procede de fabrication | |
DK3191709T3 (da) | Fremgangsmåde til produktion af elektricitet | |
KR20180084965A (ko) | 무회탄의 제조 방법 | |
FR3018389B1 (fr) | Procede de fabrication de lamelles bistables de courbures differentes | |
FR3052022B1 (fr) | Procede de fabrication de biscottes | |
FR3038208B1 (fr) | Procede de fabrication de confiture | |
DK3143028T3 (da) | Fremgangsmåde til fremstilling af penamer | |
GB2523370B (en) | Blade manufacturing method | |
FR3027551B1 (fr) | Procede de fabrication ameliore d’une piece aeronautique notamment de grandes dimensions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
CA | Change of address |
Effective date: 20240708 |
|
CD | Change of name or company name |
Owner name: STMICROELECTRONICS (CROLLES 2) SAS, FR Effective date: 20240708 Owner name: STMICROELECTRONICS FRANCE, FR Effective date: 20240708 |
|
CJ | Change in legal form |
Effective date: 20240708 |