SG11201705232YA - Resonator manufacturing method - Google Patents

Resonator manufacturing method

Info

Publication number
SG11201705232YA
SG11201705232YA SG11201705232YA SG11201705232YA SG11201705232YA SG 11201705232Y A SG11201705232Y A SG 11201705232YA SG 11201705232Y A SG11201705232Y A SG 11201705232YA SG 11201705232Y A SG11201705232Y A SG 11201705232YA SG 11201705232Y A SG11201705232Y A SG 11201705232YA
Authority
SG
Singapore
Prior art keywords
resonator manufacturing
resonator
manufacturing
Prior art date
Application number
SG11201705232YA
Inventor
Keiichi Umeda
Hiroshi Yamada
Yasuhiro Aida
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of SG11201705232YA publication Critical patent/SG11201705232YA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02259—Driving or detection means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2463—Clamped-clamped beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2468—Tuning fork resonators
    • H03H9/2478—Single-Ended Tuning Fork resonators
    • H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG11201705232YA 2014-12-26 2015-11-20 Resonator manufacturing method SG11201705232YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014265347 2014-12-26
PCT/JP2015/082672 WO2016104004A1 (en) 2014-12-26 2015-11-20 Resonator manufacturing method

Publications (1)

Publication Number Publication Date
SG11201705232YA true SG11201705232YA (en) 2017-07-28

Family

ID=56150037

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705232YA SG11201705232YA (en) 2014-12-26 2015-11-20 Resonator manufacturing method

Country Status (5)

Country Link
US (1) US10727807B2 (en)
JP (1) JP6395008B2 (en)
CN (1) CN107112967B (en)
SG (1) SG11201705232YA (en)
WO (1) WO2016104004A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6245265B2 (en) * 2013-09-20 2017-12-13 株式会社村田製作所 Vibration device and manufacturing method thereof
JP6489234B2 (en) 2015-12-02 2019-03-27 株式会社村田製作所 Piezoelectric element, piezoelectric microphone, piezoelectric resonator, and method of manufacturing piezoelectric element
CN106249947B (en) * 2016-07-22 2019-04-19 京东方科技集团股份有限公司 A kind of substrate and display device
US10339776B2 (en) * 2017-11-14 2019-07-02 Sensormatic Electronics Llc Security marker
JP7097074B2 (en) * 2019-02-07 2022-07-07 国立研究開発法人産業技術総合研究所 Nitride piezoelectric material and MEMS device using it
TWI809455B (en) * 2021-07-20 2023-07-21 大陸商茂丞(鄭州)超聲科技有限公司 Suspended piezoelectric ultrasonic transducers and the manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2756476B2 (en) * 1989-04-17 1998-05-25 住友シチックス株式会社 Method for producing p-type silicon single crystal
JP2001168675A (en) * 1999-12-08 2001-06-22 Mitsubishi Electric Corp Piezoelectric resonator, piezoelectric oscillator using this and method for manufacturing piezoelectric resonator
JP2005236338A (en) * 2001-05-11 2005-09-02 Ube Ind Ltd Piezoelectric thin-film resonator
JP2005236337A (en) 2001-05-11 2005-09-02 Ube Ind Ltd Thin-film acoustic resonator and method of producing the same
CN100527615C (en) * 2004-04-20 2009-08-12 株式会社东芝 Film bulk acoustic-wave resonator and method for manufacturing the same
JP2007019758A (en) * 2005-07-06 2007-01-25 Toshiba Corp Thin film piezo-electricity resonant element and manufacturing method thereof
JP5316748B2 (en) * 2008-03-28 2013-10-16 セイコーエプソン株式会社 Manufacturing method of vibrating piece
JP5168002B2 (en) 2008-07-22 2013-03-21 セイコーエプソン株式会社 Vibrator and oscillator
CN105210294B (en) 2013-05-13 2017-09-29 株式会社村田制作所 vibrating device

Also Published As

Publication number Publication date
US10727807B2 (en) 2020-07-28
CN107112967A (en) 2017-08-29
CN107112967B (en) 2020-07-07
WO2016104004A1 (en) 2016-06-30
JP6395008B2 (en) 2018-09-26
US20170272050A1 (en) 2017-09-21
JPWO2016104004A1 (en) 2017-08-31

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