FR3018389A1 - Procede de fabrication de lamelles bistables de courbures differentes - Google Patents
Procede de fabrication de lamelles bistables de courbures differentes Download PDFInfo
- Publication number
- FR3018389A1 FR3018389A1 FR1451833A FR1451833A FR3018389A1 FR 3018389 A1 FR3018389 A1 FR 3018389A1 FR 1451833 A FR1451833 A FR 1451833A FR 1451833 A FR1451833 A FR 1451833A FR 3018389 A1 FR3018389 A1 FR 3018389A1
- Authority
- FR
- France
- Prior art keywords
- layer portion
- layer
- piezoelectric
- bistable
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 40
- 241000446313 Lamella Species 0.000 claims abstract description 34
- 238000007750 plasma spraying Methods 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 12
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 piezoelectric Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
- F03G—SPRING, WEIGHT, INERTIA OR LIKE MOTORS; MECHANICAL-POWER PRODUCING DEVICES OR MECHANISMS, NOT OTHERWISE PROVIDED FOR OR USING ENERGY SOURCES NOT OTHERWISE PROVIDED FOR
- F03G7/00—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for
- F03G7/06—Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for using expansion or contraction of bodies due to heating, cooling, moistening, drying or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/08—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases only one element being diffused
- C23C10/10—Chromising
- C23C10/12—Chromising of ferrous surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (15)
- REVENDICATIONS1. Procédé de fabrication de lamelles bistables (13) de courbures différentes, chaque lamelle comprenant plusieurs portions de couches de matériaux (15, 17, 19, 21), dans lequel au moins une portion de couche particulière est déposée par un procédé de pulvérisation sous plasma dans des conditions différentes pour chacune des lamelles.
- 2. Procédé selon la revendication 1, dans lequel lesdites conditions différentes incluent l'une et/ou l'autre des conditions suivantes : puissance RF appliquée, puissance et fréquence d'un générateur DC pulsé, température et/ou polarisation d'un porte-substrat.
- 3. Procédé selon la revendication 1 ou 2, dans lequel chaque lamelle comprend : une première portion de couche d'un premier matériau (21) ; une deuxième portion de couche d'un deuxième matériau conducteur (17) ; une troisième portion de couche d'un troisième matériau piézoélectrique (15) ; et une quatrième portion de couche d'un quatrième matériau conducteur (19).
- 4. Procédé selon la revendication 3, dans lequel les premier et troisième matériaux sont identiques.
- 5. Procédé selon la revendication 3, dans lequel les 25 premier et troisième matériaux sont du nitrure d'aluminium, le deuxième matériau conducteur est du platine et le quatrième matériau conducteur est de l'aluminium.
- 6. Procédé selon la revendication 4 ou 5, dans lequel la première portion de couche (21) a une épaisseur comprise 30 entre 10 et 500 nm, la deuxième portion de couche (17) a une épaisseur comprise entre 10 et 500 nm, les troisième et quatrième portions de couches (15, 19) ont des épaisseurs comprises entre 1 et 10 pin.B12991 - 13-GR3C0-0378 12
- 7. Procédé selon l'une quelconque des revendications 3 à 6, dans lequel ladite portion de couche particulière est la première portion de couche de matériau (21).
- 8. Procédé selon l'une quelconque des revendications 1 5 à 7, dans lequel les couches de matériaux sont déposées sur une plaquette de silicium (25) ouverte en regard de la lamelle.
- 9. Procédé selon l'une quelconque des revendications 3 à 8, dans lequel la deuxième portion de couche (17) a une contrainte proche de zéro et les troisième et quatrième portions 10 de couches (15, 19) ont des contraintes égales et opposées.
- 10. Lamelle piézoélectrique bistable (13) comprenant une portion de couche d'un premier matériau piézoélectrique (15) disposée entre des première et deuxième portions de couche de matériau conducteur (17, 19), comprenant en outre une portion de 15 couche d'un matériau contraint (21) disposée d'un côté de la lamelle.
- 11. Lamelle piézoélectrique bistable selon la revendication 10, dans laquelle le matériau contraint (21) est un deuxième matériau piézoélectrique. 20
- 12. Lamelle piézoélectrique bistable selon la revendi- cation 11, dans laquelle les premier et deuxième matériaux piézoélectriques sont identiques.
- 13. Lamelle piézoélectrique bistable selon la revendication 12, dans laquelle les premier et deuxième matériaux 25 piézoélectriques sont du nitrure d'aluminium.
- 14. Lamelle piézoélectrique bistable selon la revendication 13, dans laquelle le premier matériau conducteur est du platine et le deuxième matériau conducteur est de l'aluminium.
- 15. Lamelle piézoélectrique bistable selon la revendi- 30 cation 14, dans laquelle la portion de couche de matériau contraint (21) a une épaisseur comprise entre 10 et 500 nm, la première portion de couche de matériau conducteur (17) a une épaisseur comprise entre 10 et 500 nm, la deuxième portion de couche de matériau conducteur (19) et la portion de couche d'unB12991 - 13-GR3C0-0378 13 premier matériau piézoélectrique (15) ont des épaisseurs comprises entre 1 et 10 pin.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451833A FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
US14/634,454 US10312431B2 (en) | 2014-03-06 | 2015-02-27 | Method of manufacturing bistable strips having different curvatures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451833A FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3018389A1 true FR3018389A1 (fr) | 2015-09-11 |
FR3018389B1 FR3018389B1 (fr) | 2017-09-01 |
Family
ID=51210513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1451833A Active FR3018389B1 (fr) | 2014-03-06 | 2014-03-06 | Procede de fabrication de lamelles bistables de courbures differentes |
Country Status (2)
Country | Link |
---|---|
US (1) | US10312431B2 (fr) |
FR (1) | FR3018389B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108897965B (zh) * | 2018-07-10 | 2022-05-03 | 浙江工业大学 | 一种多稳态复合材料壳的设计方法 |
Citations (7)
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WO1994019834A1 (fr) * | 1993-02-23 | 1994-09-01 | Research Corporation Technologies, Inc. | Dispositifs monolithiques en ceramique precontrainte et procede de realisation de ce dispositif |
WO1998011586A1 (fr) * | 1996-09-13 | 1998-03-19 | Thomson-Csf | Dispositif de commutation electrique et dispositif d'affichage utilisant ce dispositif de commutation |
US20020015259A1 (en) * | 2000-06-19 | 2002-02-07 | Munekazu Nishihara | Method for manufacturing a structure with curved surfaces |
US20060033595A1 (en) * | 2003-12-19 | 2006-02-16 | Keigo Nagao | Method of manufacturing piezoelectric thin film device and piezoelectric thin film device |
WO2008084578A1 (fr) * | 2006-12-25 | 2008-07-17 | Murata Manufacturing Co., Ltd. | Résonateur en film mince piézoélectrique |
US20100320871A1 (en) * | 2009-06-22 | 2010-12-23 | Hitachi Cable, Ltd. | Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device |
US20130257219A1 (en) * | 2012-04-02 | 2013-10-03 | Stmicroelectronics (Crolles 2) Sas | Energy harvesting device |
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-
2015
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WO2008084578A1 (fr) * | 2006-12-25 | 2008-07-17 | Murata Manufacturing Co., Ltd. | Résonateur en film mince piézoélectrique |
US20100320871A1 (en) * | 2009-06-22 | 2010-12-23 | Hitachi Cable, Ltd. | Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device |
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Also Published As
Publication number | Publication date |
---|---|
FR3018389B1 (fr) | 2017-09-01 |
US10312431B2 (en) | 2019-06-04 |
US20150255705A1 (en) | 2015-09-10 |
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