JP5588975B2 - 電気光学ダイオードデバイス - Google Patents
電気光学ダイオードデバイス Download PDFInfo
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- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
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Description
以下に説明されるデバイスの基本的な形態が図1に概略的に示される。デバイスは、基板1(例えば、ガラス)を含む。基板1の上には、電子輸送及び注入のためのカソード構造2並びに正孔輸送及び注入のためのアノード構造3が蒸着される。発光構造4は、カソードとアノードとの間に挟まれている。研究されているデバイスでは、カソード、アノード及び発光構造は、層状に形成され、基板への連続蒸着によって1層ずつ構築されている。しかしながら、本発明は、図示されるデバイス又はこのように製造されたデバイスに限定されるものではない。
図4は、一連のCOPLED A〜DのJ−V−L曲線を示す。これらの結果は、いくつかの特色を示している。
金属酸化物層に関連する光子構造は、エレクトロルミネセンス効率を向上させるために利用される。エレクトロルミネセンス効率は、金属電極による吸収を介した損失及び光出力結合の減少によって向上される。エレクトロルミネセンス効率の向上は、2つの手段(光ポンピング又はレーザ発振のいずれかによる誘導発光並びに構造からの発光を導くための導波)によってなされる。
Claims (20)
- 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に位置する分子半導体材料を含む有機発光要素と、
前記第1の電極と前記有機発光要素との間に配設された1.85を超える屈折率の材料を有し、前記第1の電極と前記有機発光要素との間で電荷を輸送する第1の電荷輸送層と、
前記第2の電極と前記有機発光要素との間に配設された1.85を超える屈折率を有する材料を含み、前記第2の電極と前記有機発光要素との間で電荷を輸送する第2の電荷輸送層と、を備え、
該デバイスの平面内で案内されるモードに対する前記第1電極及び前記第2電極に起因する光学的損失が十分に低く、前記デバイス内での光学的ゲインが維持される構造を有し、
前記有機発光要素は、層の形状に形成され、前記層の主平面に対して垂直方向において、前記主平面が有する屈折率よりも低い屈折率を有することを特徴とするダイオードデバイス。 - 前記第1の電荷輸送層と前記有機発光要素との間に位置する更なる電荷輸送層を含むことを特徴とする請求項1に記載のダイオードデバイス。
- 前記第1の電荷輸送層は、金属酸化物を含むことを特徴とする請求項1又は2に記載のダイオードデバイス。
- 金属酸化物は、ZnO、TiO2、MoO3又はZnOナノロッドであることを特徴とする請求項3に記載のダイオードデバイス。
- 前記第2の電荷輸送層と前記有機発光要素との間に位置する更なる電荷輸送層を含むことを特徴とする請求項1乃至4のいずれか1項に記載のダイオードデバイス。
- 前記第2の電荷輸送層が金属酸化物を含むことを特徴とする請求項1乃至5のいずれか1項に記載のダイオードデバイス。
- 前記第2の電荷輸送層に含まれる前記金属酸化物は、ZnO、TiO2、MoO3又はZnOナノロッドであることを特徴とする請求項6に記載のダイオードデバイス。
- 前記更なる電荷輸送層又は前記更なる電荷輸送層それぞれは、有機材料を含むことを特徴とする請求項2乃至7のいずれか1項に記載のダイオードデバイス。
- 前記更なる電荷輸送層又は前記更なる電荷輸送層それぞれは、1.85未満の屈折率を有することを特徴とする請求項2乃至8のいずれか1項に記載のダイオードデバイス。
- 前記更なる電荷輸送層又は前記更なる電荷輸送層それぞれは、TFBを含むことを特徴とする請求項2乃至9のいずれか1項に記載のダイオードデバイス。
- 前記デバイスからの光出力結合を増強する手段を含むことを特徴とする請求項1乃至10のいずれか1項に記載のダイオードデバイス。
- 前記デバイスからの前記光出力結合を増強する前記手段は、分散フィードバック構造を有することを特徴とする請求項11に記載のダイオードデバイス。
- 前記デバイスからの前記光出力結合を増強する前記手段は、回折格子を含むことを特徴とする請求項11又は12に記載のダイオードデバイス。
- 前記回折格子は、前記デバイスの2つの層の間の界面に設けられることを特徴とする請求項13に記載のダイオードデバイス。
- 前記2つの層は、前記第1の電極と前記第2の電極との間に位置することを特徴とする請求項14に記載のダイオードデバイス。
- 前記デバイスは、端発光デバイスであることを特徴とする請求項1乃至15のいずれか1項に記載のダイオードデバイス。
- 前記デバイスからの発光の25%超は、前記デバイスの端からであることを特徴とする請求項1乃至16のいずれか1項に記載のダイオードデバイス。
- 前記分子半導体材料は、有機材料であることを特徴とする請求項1乃至17のいずれか1項に記載のダイオードデバイス。
- 前記金属酸化物は、前記ZnOナノロッドの層であり、
前記ZnOナノロッドは、前記ZnOナノロッドの前記層の主平面に対して主に垂直に向けられていることを特徴とする請求項4又は7に記載のダイオードデバイス。 - 前記ナノロッドは、400nm未満の長さであることを特徴とする請求項19に記載のダイオードデバイス。
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