JP5578045B2 - 検出装置、センサーデバイス及び電子機器 - Google Patents

検出装置、センサーデバイス及び電子機器 Download PDF

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Publication number
JP5578045B2
JP5578045B2 JP2010260001A JP2010260001A JP5578045B2 JP 5578045 B2 JP5578045 B2 JP 5578045B2 JP 2010260001 A JP2010260001 A JP 2010260001A JP 2010260001 A JP2010260001 A JP 2010260001A JP 5578045 B2 JP5578045 B2 JP 5578045B2
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Japan
Prior art keywords
node
detection
transistor
read
period
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JP2010260001A
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English (en)
Japanese (ja)
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JP2011174918A (ja
JP2011174918A5 (enExample
Inventor
浩 堀内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2010260001A priority Critical patent/JP5578045B2/ja
Priority to CN2011100258005A priority patent/CN102192789A/zh
Priority to US13/013,011 priority patent/US9222838B2/en
Priority to EP11151983.1A priority patent/EP2357457A3/en
Publication of JP2011174918A publication Critical patent/JP2011174918A/ja
Publication of JP2011174918A5 publication Critical patent/JP2011174918A5/ja
Application granted granted Critical
Publication of JP5578045B2 publication Critical patent/JP5578045B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/003—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using pyroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/021—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric
    • H01G7/023—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric of macromolecular compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2010260001A 2010-01-26 2010-11-22 検出装置、センサーデバイス及び電子機器 Expired - Fee Related JP5578045B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010260001A JP5578045B2 (ja) 2010-01-26 2010-11-22 検出装置、センサーデバイス及び電子機器
CN2011100258005A CN102192789A (zh) 2010-01-26 2011-01-24 检测装置、传感器装置以及电子设备
US13/013,011 US9222838B2 (en) 2010-01-26 2011-01-25 Detection device, sensor device, and electronic device
EP11151983.1A EP2357457A3 (en) 2010-01-26 2011-01-25 Detection device, sensor device, and electronic device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010014135 2010-01-26
JP2010014135 2010-01-26
JP2010260001A JP5578045B2 (ja) 2010-01-26 2010-11-22 検出装置、センサーデバイス及び電子機器

Publications (3)

Publication Number Publication Date
JP2011174918A JP2011174918A (ja) 2011-09-08
JP2011174918A5 JP2011174918A5 (enExample) 2013-12-05
JP5578045B2 true JP5578045B2 (ja) 2014-08-27

Family

ID=43902701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010260001A Expired - Fee Related JP5578045B2 (ja) 2010-01-26 2010-11-22 検出装置、センサーデバイス及び電子機器

Country Status (4)

Country Link
US (1) US9222838B2 (enExample)
EP (1) EP2357457A3 (enExample)
JP (1) JP5578045B2 (enExample)
CN (1) CN102192789A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014153308A (ja) * 2013-02-13 2014-08-25 Azbil Corp 人検知装置および人検知方法
JP6202245B2 (ja) * 2013-03-22 2017-09-27 セイコーエプソン株式会社 赤外線センサー及び熱電変換素子
US10446116B2 (en) 2016-09-23 2019-10-15 Apple Inc. Temperature sensor on display active area
CN107657923B (zh) 2017-11-15 2020-02-21 合肥鑫晟光电科技有限公司 像素电路的检测方法、显示面板的驱动方法、显示装置及像素电路
US11244547B1 (en) 2020-08-21 2022-02-08 Vivint, Inc. Smart monitoring system
US11594034B1 (en) * 2020-08-21 2023-02-28 Vivint, Inc. Techniques for a smart monitoring system

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142427A (ja) * 1983-02-02 1984-08-15 Matsushita Electric Ind Co Ltd 熱感知器
US4897547A (en) * 1986-09-26 1990-01-30 Honeywell Inc. Gate coupled input circuit
JPH01102321A (ja) * 1987-10-16 1989-04-20 Hamamatsu Photonics Kk 赤外線検出装置とその製造方法
US5043820A (en) * 1989-03-27 1991-08-27 Hughes Aircraft Company Focal plane array readout employing one capacitive feedback transimpedance amplifier for each column
US5144133A (en) * 1991-04-04 1992-09-01 Texas Instruments Incorporated Uncooled infrared detector readout monolithic integrated circuit with individual pixel signal processing
JPH06265411A (ja) * 1993-03-16 1994-09-22 Fujitsu Ltd 赤外線撮像方法及び装置
US5926217A (en) * 1993-07-27 1999-07-20 Drs Technologies, Inc. Focal plane array integrated circuit with individual pixel signal processing
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US5869857A (en) * 1997-04-07 1999-02-09 Chen; Pao-Jung CMOS photodetectors with wide range operating region
DE69943177D1 (de) * 1998-02-27 2011-03-24 Panasonic Elec Works Co Ltd Infrarot-Strahlungsdetektor
JP3536896B2 (ja) * 1998-03-24 2004-06-14 富士ゼロックス株式会社 固体撮像素子
JP3031332B2 (ja) * 1998-05-06 2000-04-10 日本電気株式会社 イメージセンサ
JP3793033B2 (ja) * 2001-03-29 2006-07-05 株式会社東芝 赤外線センサ及びその駆動方法
TW536618B (en) * 2001-09-10 2003-06-11 Matsushita Electric Works Ltd Object detecting device with a pyroelectric sensor
JP2003101005A (ja) * 2001-09-27 2003-04-04 Citizen Watch Co Ltd 固体撮像装置
JP4075880B2 (ja) * 2004-09-29 2008-04-16 セイコーエプソン株式会社 電気光学装置、データ線駆動回路、信号処理回路および電子機器
JP4331160B2 (ja) * 2005-12-07 2009-09-16 株式会社東芝 赤外線センサおよびその駆動方法
JP2007181106A (ja) * 2005-12-28 2007-07-12 Matsushita Electric Ind Co Ltd センサ及びその駆動方法
US7969494B2 (en) * 2007-05-21 2011-06-28 Aptina Imaging Corporation Imager and system utilizing pixel with internal reset control and method of operating same
JP2009017432A (ja) 2007-07-09 2009-01-22 Seiko Epson Corp レベルシフト回路および表示装置
JP2009089292A (ja) 2007-10-03 2009-04-23 Seiko Epson Corp レベルシフタ及び表示装置
JP2010014135A (ja) 2008-07-01 2010-01-21 Nsk Ltd バックアップロール用転がり軸受
JP2010097042A (ja) 2008-10-17 2010-04-30 Seiko Epson Corp 画素回路、電気光学装置および電子機器
JP5416473B2 (ja) 2009-05-07 2014-02-12 日本ペイント株式会社 複層塗膜形成方法

Also Published As

Publication number Publication date
US9222838B2 (en) 2015-12-29
JP2011174918A (ja) 2011-09-08
CN102192789A (zh) 2011-09-21
EP2357457A3 (en) 2013-10-02
EP2357457A2 (en) 2011-08-17
US20110182323A1 (en) 2011-07-28

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