JP5574705B2 - Ｅｕｖランプおよび／または軟ｘ線ランプおよび対応する装置の変換効率を高める方法 - Google Patents

Ｅｕｖランプおよび／または軟ｘ線ランプおよび対応する装置の変換効率を高める方法 Download PDF

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JP5574705B2
JP5574705B2 JP2009510578A JP2009510578A JP5574705B2 JP 5574705 B2 JP5574705 B2 JP 5574705B2 JP 2009510578 A JP2009510578 A JP 2009510578A JP 2009510578 A JP2009510578 A JP 2009510578A JP 5574705 B2 JP5574705 B2 JP 5574705B2
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Prior art keywords
liquid material
soft
discharge space
euv
evaporated
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Japanese (ja)
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JP2009537943A5 (enExample
JP2009537943A (ja
Inventor
イェルン ヨンケルス
ドミニク マルセル ファウトレファンゲ
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Luminescent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009510578A 2006-05-16 2007-05-08 Ｅｕｖランプおよび／または軟ｘ線ランプおよび対応する装置の変換効率を高める方法 Expired - Fee Related JP5574705B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06113972 2006-05-16
EP06113972.1 2006-05-16
PCT/IB2007/051716 WO2007135587A2 (en) 2006-05-16 2007-05-08 A method of increasing the conversion efficiency of an euv and/or soft x-ray lamp and a corresponding apparatus

Publications (3)

Publication Number Publication Date
JP2009537943A JP2009537943A (ja) 2009-10-29
JP2009537943A5 JP2009537943A5 (enExample) 2010-06-24
JP5574705B2 true JP5574705B2 (ja) 2014-08-20

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JP2009510578A Expired - Fee Related JP5574705B2 (ja) 2006-05-16 2007-05-08 Ｅｕｖランプおよび／または軟ｘ線ランプおよび対応する装置の変換効率を高める方法

Country Status (9)

Country Link
US (1) US8040030B2 (enExample)
EP (1) EP2020165B1 (enExample)
JP (1) JP5574705B2 (enExample)
KR (1) KR101396158B1 (enExample)
CN (1) CN101444148B (enExample)
AT (1) ATE489839T1 (enExample)
DE (1) DE602007010765D1 (enExample)
TW (1) TWI420976B (enExample)
WO (1) WO2007135587A2 (enExample)

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US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
JP5386799B2 (ja) * 2007-07-06 2014-01-15 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、ｅｕｖ光放射方法、ｅｕｖ露光方法および電子デバイスの製造方法
DE102007060807B4 (de) * 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
KR20100102682A (ko) * 2007-12-27 2010-09-24 에이에스엠엘 네델란즈 비.브이. 극자외 방사선 소스 및 극자외 방사선을 생성하는 방법
NL2002890A1 (nl) 2008-06-16 2009-12-17 Asml Netherlands Bv Lithographic apparatus.
EP2308272B1 (en) * 2008-07-28 2012-09-19 Philips Intellectual Property & Standards GmbH Method and device for generating euv radiation or soft x-rays
JP4623192B2 (ja) * 2008-09-29 2011-02-02 ウシオ電機株式会社 極端紫外光光源装置および極端紫外光発生方法
CN102257883B (zh) 2008-12-16 2014-06-25 皇家飞利浦电子股份有限公司 用于以提高的效率生成euv辐射或软x射线的方法和装置
JP5245857B2 (ja) * 2009-01-21 2013-07-24 ウシオ電機株式会社 極端紫外光光源装置
JP5504673B2 (ja) * 2009-03-30 2014-05-28 ウシオ電機株式会社 極端紫外光光源装置
CN103281855B (zh) * 2013-05-16 2015-10-14 中国科学院光电研究院 一种用于激光光源的液态金属靶产生装置
CN104394642B (zh) * 2014-12-07 2017-03-08 湖南科技大学 激光等离子体共振x光源
CN105376919B (zh) * 2015-11-06 2017-08-01 华中科技大学 一种激光诱导液滴靶放电产生等离子体的装置
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
JP7156331B2 (ja) * 2020-05-15 2022-10-19 ウシオ電機株式会社 極端紫外光光源装置
KR20250109087A (ko) 2024-01-09 2025-07-16 한국표준과학연구원 레이저 생성 플라즈마를 사용하는 극자외선 발생 장치 및 방법

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JPS63164199A (ja) * 1986-12-25 1988-07-07 Shimadzu Corp Ｘ線発生装置用タ−ゲツト装置
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5866871A (en) 1997-04-28 1999-02-02 Birx; Daniel Plasma gun and methods for the use thereof
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
JP2002214400A (ja) 2001-01-12 2002-07-31 Toyota Macs Inc レーザープラズマｅｕｖ光源装置及びそれに用いられるターゲット
TW589924B (en) * 2001-04-06 2004-06-01 Fraunhofer Ges Forschung Process and device for producing extreme ultraviolet ray/weak x-ray
CN1314300C (zh) * 2001-06-07 2007-05-02 普莱克斯有限责任公司 星形箍缩的x射线和远紫外线光子源
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
CN101795527B (zh) * 2002-09-19 2013-02-20 Asml荷兰有限公司 辐射源、光刻装置和器件制造方法
EP1401248B1 (en) 2002-09-19 2012-07-25 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
US7002168B2 (en) * 2002-10-15 2006-02-21 Cymer, Inc. Dense plasma focus radiation source
US20050025280A1 (en) 2002-12-10 2005-02-03 Robert Schulte Volumetric 3D x-ray imaging system for baggage inspection including the detection of explosives
DE10310623B8 (de) * 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
JP4052155B2 (ja) * 2003-03-17 2008-02-27 ウシオ電機株式会社 極端紫外光放射源及び半導体露光装置
EP1642482B1 (en) * 2003-06-27 2013-10-02 Bruker Advanced Supercon GmbH Method and device for producing extreme ultraviolet radiation or soft x-ray radiation
DE10342239B4 (de) 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
FR2860385B1 (fr) 2003-09-26 2007-06-01 Cit Alcatel Source euv
JP2005141158A (ja) 2003-11-10 2005-06-02 Canon Inc 照明光学系及び露光装置
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7075096B2 (en) * 2004-02-13 2006-07-11 Plex Llc Injection pinch discharge extreme ultraviolet source

Also Published As

Publication number Publication date
CN101444148B (zh) 2013-03-27
WO2007135587A3 (en) 2008-04-24
KR20090021168A (ko) 2009-02-27
US20090206268A1 (en) 2009-08-20
KR101396158B1 (ko) 2014-05-19
JP2009537943A (ja) 2009-10-29
TWI420976B (zh) 2013-12-21
WO2007135587A2 (en) 2007-11-29
DE602007010765D1 (de) 2011-01-05
CN101444148A (zh) 2009-05-27
TW200814858A (en) 2008-03-16
EP2020165A2 (en) 2009-02-04
US8040030B2 (en) 2011-10-18
ATE489839T1 (de) 2010-12-15
EP2020165B1 (en) 2010-11-24

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