JP5568009B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 260
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 28
- 230000007547 defect Effects 0.000 claims description 23
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 11
- 238000011065 in-situ storage Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910019080 Mg-H Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Description
(CH3)3Ga(g)+NH3(g)→GaN(s)+3CH4(g)
)面に位置するようになる。したがって、上記低モルInGaN層145はインジウムが混合された場合、V欠陥147が多量生成できるが、このようなインジウムが混合された層の表面146はある一定の表面エネルギーE(surface)を有し、V欠陥147が形成されれば、上記表面エネルギーは最小E’に変わるようになる。
E’=f(S、λx)
)面が形成されながら生じるエネルギーであり、λxは転位コアエネルギーである。上記低モルInGaN層145の表面146が最小の E’値を持つ時までV欠陥(V-defect)147は続けて生成されて大きくなる。また、上記InGaN層145にはインジウムがドーピングされるので、位置エネルギー差(例:1.5~2V)により(0001)表面146より(
)面に優先的に成長が起こるようになる。
)面電界状態(surface electric state)を撹乱させて、インジウムによるV欠陥(V-defect)147の生成と成長を制限するようになる。即ち、上記低モルInGaN145でV欠陥147の(
)面に対する位置エネルギーを撹乱させて、V欠陥147に続けて付こうとするインジウムを妨害してV欠陥147の成長を制限するようになる。
Claims (13)
- 基板と、
電子を放出する第1半導体層、ホールを放出する第2半導体層、及び前記電子とホール
との結合により光を出す活性層を含む発光構造層と、を含み、
前記発光構造層のうち、少なくとも一つの層は少数キャリヤを含み、
前記第1半導体層は、第1導電型半導体層と、前記第1導電型半導体層より前記活性層から遠く離れて形成されている第1アンドープド半導体層と、を含み、
前記第1アンドープド半導体層は少数ホールを含み、
前記第2導半導体層は、第2導電型半導体層を含み、
前記第1アンドープド半導体層は、前記第1導電型半導体層と前記基板との間に形成されており、
前記第1アンドープド半導体層は、複数の欠陥を有し、
前記第1アンドープド半導体層は、前記複数の欠陥が存在する第1領域と前記欠陥が存在しない第2領域とを含み、
前記第2領域の厚さは前記第1領域の厚さよりも薄く、
前記第1アンドープド半導体層の表面は、前記第1領域の表面が前記第2領域の表面より突出した凹凸形状に形成されることを特徴とする半導体発光素子。 - 前記基板の表面は凹凸形状であることを特徴とする請求項1に記載の半導体発光素子。
- 前記基板と前記第1アンドープド半導体層との間にバッファ層を含むことを特徴とする請求項1又は2に記載の半導体発光素子。
- 前記第1アンドープド半導体層は、GaN層を含み、1〜5μmの厚さを有することを特徴とする請求項1乃至3のいずれかに記載の半導体発光素子。
- 前記第1導電型半導体層と前記活性層との間に形成されたインジウム含有量の低い低モルInGaN層を含み、
前記低モルInGaN層は、V欠陥を有することを特徴とする請求項1乃至4のいずれかに記載の半導体発光素子。 - 前記第1導電型半導体層はn型半導体層を含み、
前記第2導電型半導体層はp型半導体層を含むことを特徴とする請求項1乃至5のいずれかに記載の半導体発光素子。 - 前記活性層と前記第2導電型半導体層との間に第2アンドープド半導体層とを含むことを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第2アンドープド半導体層の厚さは10Å〜500Åであり、
前記第2導電型半導体層の厚さは10Å〜2000Åであることを特徴とする請求項7に記載の半導体発光素子。 - 前記第2導電型半導体層上に第3アンドープド半導体層を含むことを特徴とする請求項7又は8に記載の半導体発光素子。
- 前記第2および第3アンドープド半導体層はGaN層を含むことを特徴とする請求項9に記載の半導体発光素子。
- 基板上に第1半導体層を形成するステップと、
前記第1半導体層の上に活性層を形成するステップと、
前記活性層の上に第2半導体層を形成するステップと、を含み、
前記第1半導体層を形成するステップは、第1アンドープド半導体層を形成するステッ
プと、前記第1アンドープド半導体層の上に第1導電型半導体層を形成するステップとを含み、
前記第1アンドープド半導体層の成長時に、露光により少数ホールを形成し、
前記第1アンドープド半導体層は欠陥を有し、
前記第1アンドープド半導体層は、前記欠陥が存在する第1領域と前記欠陥が存在しない第2領域とを含み、
前記第2領域の厚さは前記第1領域の厚さより薄く形成され、
前記第1アンドープド半導体層の表面は、前記第1領域の表面が前記第2領域の表面より突出して凹凸形状に形成される、ことを特徴とする半導体発光素子の製造方法。 - 前記第1半導体層と前記活性層との間にインジウム含有量の低い低モルInGaN層を形成するステップを含むことを特徴とする請求項11に記載の半導体発光素子の製造方法。
- 前記第2半導体層を形成するステップは、前記活性層の上に第2アンドープド半導体層と、前記第2アンドープド半導体層の上に第2導電型半導体層を形成するステップとを含み、
前記第2導電型半導体層の成長時、前記露光により少数電子が形成されることを特徴とする請求項11又は12に記載の半導体発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020070075908A KR100916489B1 (ko) | 2007-07-27 | 2007-07-27 | 반도체 발광소자 및 그 제조방법 |
KR10-2007-0075908 | 2007-07-27 | ||
PCT/KR2008/004359 WO2009017338A2 (en) | 2007-07-27 | 2008-07-25 | Semiconductor light emitting device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
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JP2010534933A JP2010534933A (ja) | 2010-11-11 |
JP5568009B2 true JP5568009B2 (ja) | 2014-08-06 |
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JP2010518126A Active JP5568009B2 (ja) | 2007-07-27 | 2008-07-25 | 半導体発光素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7875874B2 (ja) |
EP (1) | EP2174358B1 (ja) |
JP (1) | JP5568009B2 (ja) |
KR (1) | KR100916489B1 (ja) |
CN (1) | CN101765924B (ja) |
WO (1) | WO2009017338A2 (ja) |
Families Citing this family (7)
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JP2010205988A (ja) * | 2009-03-04 | 2010-09-16 | Panasonic Corp | 窒化物半導体素子及びその製造方法 |
DE102011012928A1 (de) | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper |
JP5437538B1 (ja) | 2012-02-28 | 2014-03-12 | パナソニック株式会社 | 窒化物半導体発光素子およびその窒化物半導体発光素子を備えた光源 |
CN103390699A (zh) * | 2012-05-09 | 2013-11-13 | 华夏光股份有限公司 | 发光二极管及其制造方法 |
DE102012104671B4 (de) * | 2012-05-30 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer aktiven Zone für einen optoelektronischen Halbleiterchip |
KR102369933B1 (ko) * | 2015-08-03 | 2022-03-04 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조 방법 |
US11063231B2 (en) | 2018-10-05 | 2021-07-13 | Samsung Electronics Co., Ltd. | Light emitting device and display device including the same |
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- 2007-07-27 KR KR1020070075908A patent/KR100916489B1/ko active IP Right Grant
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2008
- 2008-07-25 WO PCT/KR2008/004359 patent/WO2009017338A2/en active Application Filing
- 2008-07-25 CN CN200880100742.4A patent/CN101765924B/zh active Active
- 2008-07-25 EP EP08792900.6A patent/EP2174358B1/en active Active
- 2008-07-25 JP JP2010518126A patent/JP5568009B2/ja active Active
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Also Published As
Publication number | Publication date |
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KR20090011885A (ko) | 2009-02-02 |
WO2009017338A3 (en) | 2009-04-09 |
JP2010534933A (ja) | 2010-11-11 |
EP2174358B1 (en) | 2018-10-17 |
KR100916489B1 (ko) | 2009-09-08 |
US20100187495A1 (en) | 2010-07-29 |
WO2009017338A2 (en) | 2009-02-05 |
US7875874B2 (en) | 2011-01-25 |
EP2174358A4 (en) | 2010-07-28 |
EP2174358A2 (en) | 2010-04-14 |
CN101765924B (zh) | 2013-03-13 |
CN101765924A (zh) | 2010-06-30 |
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