JP5559203B2 - シリコン心棒を製造する方法及び装置 - Google Patents

シリコン心棒を製造する方法及び装置 Download PDF

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Publication number
JP5559203B2
JP5559203B2 JP2011546591A JP2011546591A JP5559203B2 JP 5559203 B2 JP5559203 B2 JP 5559203B2 JP 2011546591 A JP2011546591 A JP 2011546591A JP 2011546591 A JP2011546591 A JP 2011546591A JP 5559203 B2 JP5559203 B2 JP 5559203B2
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silicon
induction coil
mandrel
pulling
pulled
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Japanese (ja)
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JP2012515698A5 (enExample
JP2012515698A (ja
Inventor
リーマン ヘルゲ
シュルツェ フリードリヒ−ヴィルヘルム
フィッシャー イェルク
レナー マティアス
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PV Silicon Forschungs und Produktions GmbH
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PV Silicon Forschungs und Produktions GmbH
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2011546591A 2009-01-21 2010-01-19 シリコン心棒を製造する方法及び装置 Expired - Fee Related JP5559203B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009005837A DE102009005837B4 (de) 2009-01-21 2009-01-21 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
DE102009005837.0 2009-01-21
PCT/DE2010/000070 WO2010083818A1 (de) 2009-01-21 2010-01-19 Verfahren und vorrichtung zur herstellung von siliziumdünnstäben

Publications (3)

Publication Number Publication Date
JP2012515698A JP2012515698A (ja) 2012-07-12
JP2012515698A5 JP2012515698A5 (enExample) 2012-12-20
JP5559203B2 true JP5559203B2 (ja) 2014-07-23

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JP2011546591A Expired - Fee Related JP5559203B2 (ja) 2009-01-21 2010-01-19 シリコン心棒を製造する方法及び装置

Country Status (7)

Country Link
US (1) US8197595B2 (enExample)
EP (1) EP2379783B1 (enExample)
JP (1) JP5559203B2 (enExample)
CN (1) CN102292475B (enExample)
DE (1) DE102009005837B4 (enExample)
DK (1) DK2379783T3 (enExample)
WO (1) WO2010083818A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012003162T5 (de) * 2011-07-29 2014-04-17 Ats Automation Tooling Systems Inc. Systeme und Verfahren zum Herstellen dünner Siliziumstäbe
RU2507318C1 (ru) * 2012-08-14 2014-02-20 Закрытое Акционерное Общество "Валенсия" Способ получения кремниевых филаментов произвольного сечения (варианты)
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
CN103993352A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的硅芯拉制方法
CN105274616B (zh) * 2014-06-18 2018-03-09 四川永祥多晶硅有限公司 一种提高硅芯母料利用率的方法
KR101611053B1 (ko) * 2014-06-27 2016-04-11 오씨아이 주식회사 폴리실리콘 절편을 이용한 폴리실리콘 필라멘트 접합장치
CN104264221A (zh) * 2014-09-10 2015-01-07 河南协鑫光伏科技有限公司 一种生产原生多晶硅用方型硅芯材料及制备方法
DE102014226419A1 (de) * 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
CN106757310A (zh) * 2016-12-19 2017-05-31 洛阳金诺机械工程有限公司 一种硅芯拉制装置
CN109576778A (zh) * 2018-12-25 2019-04-05 内蒙古中环光伏材料有限公司 一种降低cz法制备单晶的杂质含量的方法
CN114455587B (zh) * 2022-01-26 2023-07-21 何良雨 一种高纯多晶硅生产装置和方法
WO2025060333A1 (zh) * 2023-09-22 2025-03-27 洛阳长缨新能源科技有限公司 多圈籽晶差动升降装置及使多圈籽晶差动升降的方法

Family Cites Families (12)

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DE1544301A1 (de) * 1966-09-28 1970-05-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
DE2458490A1 (de) 1974-12-10 1976-06-16 Siemens Ag Verfahren zum herstellen eines siliciumhalbleiterkristallstabes durch tiegelfreies zonenschmelzen
US4220839A (en) * 1978-01-05 1980-09-02 Topsil A/S Induction heating coil for float zone melting of semiconductor rods
DD141536A1 (de) * 1979-01-22 1980-05-07 Dietmar Taenzer Verfahren zur herstellung kristalliner staebchen aus einer schmelze
DE2952602A1 (de) 1979-12-28 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von silicium-duennstaeben
DD226599B1 (de) * 1984-09-10 1990-10-10 Spurenmetalle Freiberg Veb Kom Vorrichtung zur herstellung von silizium-duennstaeben
US7335257B2 (en) * 2003-02-11 2008-02-26 Topsil Semiconductor Materials A/S Apparatus for and method of manufacturing a single crystal rod
CN1247831C (zh) * 2003-11-14 2006-03-29 中国科学院物理研究所 一种碳化硅晶体生长装置
JP5080971B2 (ja) * 2004-06-18 2012-11-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ
DE102005016776B4 (de) 2005-04-06 2009-06-18 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd polygonalem Querschnitt
US20110204044A1 (en) * 2008-11-25 2011-08-25 Chaoxuan Liu High-frequency coil pulling holes arrangement for producing multiple silicon cores
JP5313354B2 (ja) * 2008-11-25 2013-10-09 ルオヤン ジンヌオ メカニカル エンジニアリング カンパニー リミテッド 複数のシリコン芯を製造する高周波コイル引き孔の配置

Also Published As

Publication number Publication date
EP2379783A1 (de) 2011-10-26
DE102009005837A1 (de) 2010-07-22
DK2379783T3 (da) 2014-09-08
CN102292475B (zh) 2014-05-28
US20110314869A1 (en) 2011-12-29
US8197595B2 (en) 2012-06-12
EP2379783B1 (de) 2014-05-28
DE102009005837B4 (de) 2011-10-06
JP2012515698A (ja) 2012-07-12
WO2010083818A1 (de) 2010-07-29
CN102292475A (zh) 2011-12-21

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