DE102009005837B4 - Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben - Google Patents

Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben Download PDF

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Publication number
DE102009005837B4
DE102009005837B4 DE102009005837A DE102009005837A DE102009005837B4 DE 102009005837 B4 DE102009005837 B4 DE 102009005837B4 DE 102009005837 A DE102009005837 A DE 102009005837A DE 102009005837 A DE102009005837 A DE 102009005837A DE 102009005837 B4 DE102009005837 B4 DE 102009005837B4
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DE
Germany
Prior art keywords
induction coil
silicon
rod
rods
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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DE102009005837A
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German (de)
English (en)
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DE102009005837A1 (de
Inventor
Dr. Riemann Helge
Dr. Schulze Friedrich-Wilhelm
Matthias Renner
Jörg Fischer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pv Crystalox Solar Silicon De GmbH
Original Assignee
PV Silicon Forschungs und Produktions GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009005837A priority Critical patent/DE102009005837B4/de
Application filed by PV Silicon Forschungs und Produktions GmbH filed Critical PV Silicon Forschungs und Produktions GmbH
Priority to PCT/DE2010/000070 priority patent/WO2010083818A1/de
Priority to US13/143,738 priority patent/US8197595B2/en
Priority to JP2011546591A priority patent/JP5559203B2/ja
Priority to DK10706486.7T priority patent/DK2379783T3/da
Priority to EP10706486.7A priority patent/EP2379783B1/de
Priority to CN201080004883.3A priority patent/CN102292475B/zh
Publication of DE102009005837A1 publication Critical patent/DE102009005837A1/de
Application granted granted Critical
Publication of DE102009005837B4 publication Critical patent/DE102009005837B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE102009005837A 2009-01-21 2009-01-21 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben Expired - Fee Related DE102009005837B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102009005837A DE102009005837B4 (de) 2009-01-21 2009-01-21 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
US13/143,738 US8197595B2 (en) 2009-01-21 2010-01-19 Method and device for producing thin silicon rods
JP2011546591A JP5559203B2 (ja) 2009-01-21 2010-01-19 シリコン心棒を製造する方法及び装置
DK10706486.7T DK2379783T3 (da) 2009-01-21 2010-01-19 Fremgangsmåde og apparat til fremstilling af tynde siliciumstænger
PCT/DE2010/000070 WO2010083818A1 (de) 2009-01-21 2010-01-19 Verfahren und vorrichtung zur herstellung von siliziumdünnstäben
EP10706486.7A EP2379783B1 (de) 2009-01-21 2010-01-19 Verfahren und vorrichtung zur herstellung von siliziumdünnstäben
CN201080004883.3A CN102292475B (zh) 2009-01-21 2010-01-19 用于生产硅细棒的方法和设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009005837A DE102009005837B4 (de) 2009-01-21 2009-01-21 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben

Publications (2)

Publication Number Publication Date
DE102009005837A1 DE102009005837A1 (de) 2010-07-22
DE102009005837B4 true DE102009005837B4 (de) 2011-10-06

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Country Status (7)

Country Link
US (1) US8197595B2 (enExample)
EP (1) EP2379783B1 (enExample)
JP (1) JP5559203B2 (enExample)
CN (1) CN102292475B (enExample)
DE (1) DE102009005837B4 (enExample)
DK (1) DK2379783T3 (enExample)
WO (1) WO2010083818A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103781587B (zh) * 2011-07-29 2016-09-07 Ats自动化加工系统公司 用于生产硅细棒的系统和方法
RU2507318C1 (ru) * 2012-08-14 2014-02-20 Закрытое Акционерное Общество "Валенсия" Способ получения кремниевых филаментов произвольного сечения (варианты)
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
CN103993352A (zh) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 一种使籽晶转动的硅芯拉制方法
CN105274616B (zh) * 2014-06-18 2018-03-09 四川永祥多晶硅有限公司 一种提高硅芯母料利用率的方法
KR101611053B1 (ko) * 2014-06-27 2016-04-11 오씨아이 주식회사 폴리실리콘 절편을 이용한 폴리실리콘 필라멘트 접합장치
CN104264221A (zh) * 2014-09-10 2015-01-07 河南协鑫光伏科技有限公司 一种生产原生多晶硅用方型硅芯材料及制备方法
DE102014226419A1 (de) * 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
CN106757310A (zh) * 2016-12-19 2017-05-31 洛阳金诺机械工程有限公司 一种硅芯拉制装置
CN109576778A (zh) * 2018-12-25 2019-04-05 内蒙古中环光伏材料有限公司 一种降低cz法制备单晶的杂质含量的方法
CN114455587B (zh) * 2022-01-26 2023-07-21 何良雨 一种高纯多晶硅生产装置和方法
WO2025060333A1 (zh) * 2023-09-22 2025-03-27 洛阳长缨新能源科技有限公司 多圈籽晶差动升降装置及使多圈籽晶差动升降的方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
DD141536A1 (de) * 1979-01-22 1980-05-07 Dietmar Taenzer Verfahren zur herstellung kristalliner staebchen aus einer schmelze
DD226599A1 (de) * 1984-09-10 1985-08-28 Spurenmetalle Freiberg Veb Kom Verfahren und vorrichtung zur herstellung von silizium-duennstaeben

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DE1544301A1 (de) * 1966-09-28 1970-05-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
DE2458490A1 (de) 1974-12-10 1976-06-16 Siemens Ag Verfahren zum herstellen eines siliciumhalbleiterkristallstabes durch tiegelfreies zonenschmelzen
US4220839A (en) * 1978-01-05 1980-09-02 Topsil A/S Induction heating coil for float zone melting of semiconductor rods
DE2952602A1 (de) 1979-12-28 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von silicium-duennstaeben
ATE332990T1 (de) * 2003-02-11 2006-08-15 Topsil Semiconductor Materials Vorrichtung und verfahren zur herstellung eines einkristallstabs
CN1247831C (zh) * 2003-11-14 2006-03-29 中国科学院物理研究所 一种碳化硅晶体生长装置
JP5080971B2 (ja) * 2004-06-18 2012-11-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ
DE102005063346B4 (de) 2005-04-06 2010-10-28 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt
US20110204044A1 (en) * 2008-11-25 2011-08-25 Chaoxuan Liu High-frequency coil pulling holes arrangement for producing multiple silicon cores
WO2010060349A1 (zh) 2008-11-25 2010-06-03 Liu Chaoxuan 制造多根硅芯的高频线圈拉制孔布局

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
DD141536A1 (de) * 1979-01-22 1980-05-07 Dietmar Taenzer Verfahren zur herstellung kristalliner staebchen aus einer schmelze
DD226599A1 (de) * 1984-09-10 1985-08-28 Spurenmetalle Freiberg Veb Kom Verfahren und vorrichtung zur herstellung von silizium-duennstaeben
DD226599B1 (de) 1984-09-10 1990-10-10 Spurenmetalle Freiberg Veb Kom Vorrichtung zur herstellung von silizium-duennstaeben

Also Published As

Publication number Publication date
DE102009005837A1 (de) 2010-07-22
EP2379783B1 (de) 2014-05-28
JP5559203B2 (ja) 2014-07-23
CN102292475B (zh) 2014-05-28
CN102292475A (zh) 2011-12-21
US8197595B2 (en) 2012-06-12
WO2010083818A1 (de) 2010-07-29
JP2012515698A (ja) 2012-07-12
EP2379783A1 (de) 2011-10-26
DK2379783T3 (da) 2014-09-08
US20110314869A1 (en) 2011-12-29

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