WO2010060349A1 - 制造多根硅芯的高频线圈拉制孔布局 - Google Patents
制造多根硅芯的高频线圈拉制孔布局 Download PDFInfo
- Publication number
- WO2010060349A1 WO2010060349A1 PCT/CN2009/074838 CN2009074838W WO2010060349A1 WO 2010060349 A1 WO2010060349 A1 WO 2010060349A1 CN 2009074838 W CN2009074838 W CN 2009074838W WO 2010060349 A1 WO2010060349 A1 WO 2010060349A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- drawn
- holes
- hole
- frequency coil
- cooling water
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
- H05B6/42—Cooling of coils
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
Definitions
- Patent 11 Patent name, a high frequency coil capable of producing five silicon cores or other crystal materials at one time; Application date, February 13, 2007; Authorized announcement number, CN201024229Y;
- Patent 14 Patent name, a high frequency coil capable of producing seven silicon cores or other crystal materials at one time; application date, January 19, 2007; authorization notice number, CN200996059Y;
- the high-frequency coil drawing hole layout for manufacturing a plurality of silicon cores wherein the layout is to arrange a radial diverging groove between the drawing hole and the drawing hole; or to form a "C" shape on both sides of the drawing hole
- the shunting groove is assisted by the auxiliary current guiding hole; or a short groove is respectively arranged on both sides of the drawing hole; or a connecting line is formed between the two drawn holes to form a barbell-like uniformity at the outer end of the radial dividing groove
- the drawing of 2 to 8 and 13 or 16 or 19 or 22 silicon cores between the holes is substantially uniform due to the shunting of the shunting or shunting slots and the auxiliary current guiding holes during the operation of the current.
- Figure 24 is a schematic view showing the working principle of the sixteen drawn holes current operation of the present invention
- Figure 25 is a schematic view showing the structure of another embodiment of the sixteen drawn holes of the present invention
- the high frequency coil drawn hole layout of the plurality of silicon cores is manufactured; wherein FIGS. 1 to 30 are common portions of the embodiments of the present invention, the high The frequency coil drawing hole layout is arranged on one side of the high frequency coil 1 with adjacent current conveying and cooling water conveying copper tube A5 and current conveying and cooling water conveying copper tube B6, two adjacent current conveying and cooling water conveying copper An inwardly extending diversion groove 2 is disposed between the tube A5 and the current delivery and cooling water delivery copper tube B6.
- the draw holes 3 are at least two.
- crystal chuck 14 is only another auxiliary structure for the implementation of the present invention, and thus the present invention is not explained in detail, and the wafer chuck 14 and other devices are not within the scope of the present invention.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011529439A JP5313354B2 (ja) | 2008-11-25 | 2009-11-06 | 複数のシリコン芯を製造する高周波コイル引き孔の配置 |
KR1020107026853A KR101324582B1 (ko) | 2008-11-25 | 2009-11-06 | 복수 개의 실리콘 코어를 제조하기 위한 고주파 코일 인상홀 배열체 |
US13/125,973 US20110204044A1 (en) | 2008-11-25 | 2009-11-06 | High-frequency coil pulling holes arrangement for producing multiple silicon cores |
EP09828609.9A EP2366814A4 (en) | 2008-11-25 | 2009-11-06 | HIGH FREQUENCY PULLING PULL OVER ASSEMBLY FOR THE MANUFACTURE OF SEVERAL SILICON CORE |
Applications Claiming Priority (30)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810182055.3 | 2008-11-25 | ||
CN2008101820587A CN101457395B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产三根硅芯及其它晶体材料的高频线圈结构 |
CN200810182056.8 | 2008-11-25 | ||
CN200810182057.2 | 2008-11-25 | ||
CN200810182052.X | 2008-11-25 | ||
CN2008101820572A CN101457394B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产两根硅芯及其它晶体材料的高频线圈结构 |
CNA2008101820553A CN101457392A (zh) | 2008-11-25 | 2008-11-25 | 可同时生产五根硅芯及其它晶体材料的高频线圈结构 |
CN200810181999.9 | 2008-11-25 | ||
CN2008101820549A CN101457391B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产四根硅芯及其它晶体材料的高频线圈结构 |
CN2008101820534A CN101457390B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产八根硅芯及其它晶体材料的高频线圈结构 |
CN 200810182052 CN101457389B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产七根硅芯及其它晶体材料的高频线圈结构 |
CN2008101820568A CN101457393B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产三根硅芯及其它晶体材料的高频线圈结构 |
CN200810182053.4 | 2008-11-25 | ||
CN2008101819984A CN101487136B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产六根硅芯或其它晶体材料的高频线圈结构 |
CN200810182058.7 | 2008-11-25 | ||
CN2008101820002A CN101457388B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产两根硅芯及其它晶体材料的高频线圈结构 |
CN200810182054.9 | 2008-11-25 | ||
CN200810182000.2 | 2008-11-25 | ||
CN200810181998.4 | 2008-11-25 | ||
CN2008101819999A CN101487137B (zh) | 2008-11-25 | 2008-11-25 | 可同时生产四根硅芯及其它晶体材料的高频线圈结构 |
CN200910064014.9 | 2009-01-06 | ||
CN200910064012.X | 2009-01-06 | ||
CN2009100640149A CN101570885B (zh) | 2009-01-06 | 2009-01-06 | 一次可同时拉制十三根硅芯或其它晶体材料的高频线圈 |
CN200910064015.3 | 2009-01-06 | ||
CN2009100640168A CN101570887B (zh) | 2009-01-06 | 2009-01-06 | 一种拉制十九根硅芯或其它晶体材料的高频线圈 |
CN 200910064015 CN101570886B (zh) | 2009-01-06 | 2009-01-06 | 可以拉制二十二根硅芯或其它晶体材料的高频线圈结构 |
CN200910064013.4 | 2009-01-06 | ||
CN200910064016.8 | 2009-01-06 | ||
CN2009100640134A CN101570884B (zh) | 2009-01-06 | 2009-01-06 | 一次可同时拉制十六根硅芯或其它晶体材料的高频线圈 |
CN200910064012XA CN101570883B (zh) | 2009-01-06 | 2009-01-06 | 可以同时拉制十九根硅芯或其它晶体材料的高频线圈结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010060349A1 true WO2010060349A1 (zh) | 2010-06-03 |
Family
ID=42225252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2009/074838 WO2010060349A1 (zh) | 2008-11-25 | 2009-11-06 | 制造多根硅芯的高频线圈拉制孔布局 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2366814A4 (zh) |
JP (1) | JP5313354B2 (zh) |
KR (1) | KR101324582B1 (zh) |
WO (1) | WO2010060349A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8197595B2 (en) | 2009-01-21 | 2012-06-12 | Pv Silicon Forschungs Und Produktions Gmbh | Method and device for producing thin silicon rods |
WO2013040735A1 (zh) * | 2011-09-20 | 2013-03-28 | 洛阳金诺机械工程有限公司 | 可同时生产五根至十根硅芯的高频线圈拉制孔结构 |
RU2507318C1 (ru) * | 2012-08-14 | 2014-02-20 | Закрытое Акционерное Общество "Валенсия" | Способ получения кремниевых филаментов произвольного сечения (варианты) |
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CN101457390A (zh) * | 2008-11-25 | 2009-06-17 | 刘朝轩 | 可同时生产八根硅芯及其它晶体材料的高频线圈结构 |
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2009
- 2009-11-06 WO PCT/CN2009/074838 patent/WO2010060349A1/zh active Application Filing
- 2009-11-06 JP JP2011529439A patent/JP5313354B2/ja not_active Expired - Fee Related
- 2009-11-06 KR KR1020107026853A patent/KR101324582B1/ko active IP Right Grant
- 2009-11-06 EP EP09828609.9A patent/EP2366814A4/en not_active Withdrawn
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CN200996057Y (zh) * | 2007-01-19 | 2007-12-26 | 刘朝轩 | 一种四个内孔呈四方形排列的高频线圈 |
CN200996059Y (zh) * | 2007-01-19 | 2007-12-26 | 刘朝轩 | 一种一次可生产七根硅芯或其它晶体材料的高频线圈 |
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CN101570885A (zh) * | 2009-01-06 | 2009-11-04 | 刘朝轩 | 一次可同时拉制十三根硅芯或其它晶体材料的高频线圈 |
CN101570883A (zh) * | 2009-01-06 | 2009-11-04 | 刘朝轩 | 可以同时拉制十九根硅芯或其它晶体材料的高频线圈结构 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8197595B2 (en) | 2009-01-21 | 2012-06-12 | Pv Silicon Forschungs Und Produktions Gmbh | Method and device for producing thin silicon rods |
WO2013040735A1 (zh) * | 2011-09-20 | 2013-03-28 | 洛阳金诺机械工程有限公司 | 可同时生产五根至十根硅芯的高频线圈拉制孔结构 |
RU2507318C1 (ru) * | 2012-08-14 | 2014-02-20 | Закрытое Акционерное Общество "Валенсия" | Способ получения кремниевых филаментов произвольного сечения (варианты) |
Also Published As
Publication number | Publication date |
---|---|
EP2366814A1 (en) | 2011-09-21 |
KR20110008306A (ko) | 2011-01-26 |
EP2366814A4 (en) | 2014-03-19 |
JP5313354B2 (ja) | 2013-10-09 |
KR101324582B1 (ko) | 2013-11-04 |
JP2012504098A (ja) | 2012-02-16 |
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