JP5554753B2 - 露光方法及びその装置 - Google Patents

露光方法及びその装置 Download PDF

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Publication number
JP5554753B2
JP5554753B2 JP2011143904A JP2011143904A JP5554753B2 JP 5554753 B2 JP5554753 B2 JP 5554753B2 JP 2011143904 A JP2011143904 A JP 2011143904A JP 2011143904 A JP2011143904 A JP 2011143904A JP 5554753 B2 JP5554753 B2 JP 5554753B2
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JP
Japan
Prior art keywords
exposure
light
light source
information
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011143904A
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English (en)
Japanese (ja)
Other versions
JP2013011715A (ja
Inventor
佳奈 根本
聡 高橋
康裕 吉武
重信 丸山
恵子 吉水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011143904A priority Critical patent/JP5554753B2/ja
Priority to TW101117639A priority patent/TWI459155B/zh
Priority to CN201210224380.8A priority patent/CN102854754B/zh
Priority to KR1020120069763A priority patent/KR101432888B1/ko
Publication of JP2013011715A publication Critical patent/JP2013011715A/ja
Application granted granted Critical
Publication of JP5554753B2 publication Critical patent/JP5554753B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F5/00—Screening processes; Screens therefor
    • G03F5/02—Screening processes; Screens therefor by projection methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011143904A 2011-06-29 2011-06-29 露光方法及びその装置 Expired - Fee Related JP5554753B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011143904A JP5554753B2 (ja) 2011-06-29 2011-06-29 露光方法及びその装置
TW101117639A TWI459155B (zh) 2011-06-29 2012-05-17 Exposure method and device thereof
CN201210224380.8A CN102854754B (zh) 2011-06-29 2012-06-28 曝光方法及其装置
KR1020120069763A KR101432888B1 (ko) 2011-06-29 2012-06-28 노광 방법 및 그 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011143904A JP5554753B2 (ja) 2011-06-29 2011-06-29 露光方法及びその装置

Publications (2)

Publication Number Publication Date
JP2013011715A JP2013011715A (ja) 2013-01-17
JP5554753B2 true JP5554753B2 (ja) 2014-07-23

Family

ID=47401450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011143904A Expired - Fee Related JP5554753B2 (ja) 2011-06-29 2011-06-29 露光方法及びその装置

Country Status (4)

Country Link
JP (1) JP5554753B2 (zh)
KR (1) KR101432888B1 (zh)
CN (1) CN102854754B (zh)
TW (1) TWI459155B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6574087B2 (ja) * 2013-12-09 2019-09-11 株式会社ブイ・テクノロジー 露光装置、露光方法及びミラー曲げ機構付き反射鏡
KR102193996B1 (ko) * 2014-01-28 2020-12-22 엘지전자 주식회사 노광 장치 및 이를 이용한 노광 방법
JP6535197B2 (ja) * 2014-04-28 2019-06-26 株式会社ブイ・テクノロジー 露光装置及び露光方法
US20210024196A1 (en) * 2019-07-25 2021-01-28 Gulfstream Aerospace Corporation Aircraft, interior panels for aircfraft, and methods for making interior panels

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369209A (ja) * 1991-06-17 1992-12-22 Nikon Corp 露光用照明装置
JPH07201711A (ja) * 1993-12-29 1995-08-04 Dainippon Screen Mfg Co Ltd 近接露光方法及びその装置
JPH10242018A (ja) * 1997-02-21 1998-09-11 Mejiro Precision:Kk 露光光学系
JPH1197343A (ja) * 1997-09-24 1999-04-09 Canon Inc 露光装置
JP2004354909A (ja) * 2003-05-30 2004-12-16 Orc Mfg Co Ltd 投影露光装置および投影露光方法
JP2005183421A (ja) * 2003-12-16 2005-07-07 Nikon Corp 照明光学装置、露光装置、および露光方法
JP3972066B2 (ja) * 2004-03-16 2007-09-05 大日精化工業株式会社 光制御式光路切替型データ配信装置および配信方法
JP4475631B2 (ja) * 2004-03-16 2010-06-09 大日本印刷株式会社 プロキシミティ露光装置及びこのプロキシミティ露光装置を用いた露光方法
JP2005345591A (ja) * 2004-06-01 2005-12-15 Hitachi Displays Ltd 表示装置の製造方法及びその装置
CN100529970C (zh) * 2006-04-26 2009-08-19 株式会社Orc制作所 投影曝光装置
CN1896875A (zh) * 2006-06-02 2007-01-17 上海微电子装备有限公司 一种光刻机
JP2009095876A (ja) * 2007-10-18 2009-05-07 Olympus Corp レーザ加工装置、レーザ加工方法およびレーザ加工プログラム
KR101708943B1 (ko) * 2007-11-06 2017-02-21 가부시키가이샤 니콘 제어 장치, 노광 방법 및 노광 장치
JP5473350B2 (ja) * 2009-02-13 2014-04-16 キヤノン株式会社 照明光学系、露光装置及びデバイスの製造方法
JP5465024B2 (ja) * 2009-11-16 2014-04-09 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法
JP5464991B2 (ja) * 2009-12-07 2014-04-09 Ｎｓｋテクノロジー株式会社 近接露光装置及び近接露光方法
JP5499399B2 (ja) * 2009-07-28 2014-05-21 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
JP2013011715A (ja) 2013-01-17
TW201305740A (zh) 2013-02-01
CN102854754B (zh) 2014-09-03
KR20130002954A (ko) 2013-01-08
TWI459155B (zh) 2014-11-01
CN102854754A (zh) 2013-01-02
KR101432888B1 (ko) 2014-08-21

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