JP5553478B2 - ナノワイヤーチャンネルとナノ粒子―フローティングゲートノードを具備した非揮発性メモリ電子素子及びその製造方法 - Google Patents
ナノワイヤーチャンネルとナノ粒子―フローティングゲートノードを具備した非揮発性メモリ電子素子及びその製造方法 Download PDFInfo
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- JP5553478B2 JP5553478B2 JP2008032320A JP2008032320A JP5553478B2 JP 5553478 B2 JP5553478 B2 JP 5553478B2 JP 2008032320 A JP2008032320 A JP 2008032320A JP 2008032320 A JP2008032320 A JP 2008032320A JP 5553478 B2 JP5553478 B2 JP 5553478B2
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Classifications
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Description
HMDS層の上部の上記半導体ナノワイヤーの両端にソース電極とドレーン電極を形成する段階;上記ソース電極とドレーン電極間の上記絶縁物層の上にゲート電極を形成する段階を含むことを特徴とする。
上記第2空間部及び第2フォトレジストの上に金属層を積層して上記第2フォトレジストを除去してゲート電極を形成する段階を含むことを特徴とする。
後述する ソース及びドレーン電極が形成する第1空間部(図示せず)を形成させる。一方、上記シリコン、半導体、ガラス及びプラスチック基板10と上記HMDS膜21の間にはSiO2及び絶縁物絶縁膜20をより形成させられる。
20 絶縁膜
31 ソース電極
33 ドレーン電極
35 ゲート電極
40 半導体ナノワイヤー複合体
41 半導体ナノワイヤー
42 トンネリング層
43 電荷貯蔵層
44 絶縁物層
51,53 第一フォトレジスト
52,54 第二フォトレジスト
60 超音波水槽
Claims (22)
- 基板の上部に形成されたソース電極及びドレイン電極と;
上記ソース電極及び上記ドレイン電極を上記基板から浮揚した状態又は上記基板に吸着された状態で互いに連結された半導体ナノワイヤー複合体及び
上記半導体ナノワイヤー複合体を包むように形成され、上記ソース電極及び上記ドレイン電極の間の基板の上部に形成されたゲート電極を含み、
上記半導体ナノワイヤー複合体は、
半導体ナノワイヤーと;
上記半導体ナノワイヤーの表面に吸着されるナノ粒子からなり、上記半導体ナノワイヤーを包むように形成された電荷蓄積層及び;
上記電荷蓄積層を包むように形成された絶縁体層を含み、
上記ナノ粒子は、
HgTe、HgSe、HgS、CdTe、CdSe、CdS、ZnTe、ZnSe、ZnS、PbTe、PbSe、PbS、Au、Pt、Co、W、Ni及びFeからなる群より選択される成分からなるコアと;
上記コアの上にSiO2の酸化物若しくはTiO2の酸化物又は上記コアよりエネルギーギャップが大きいナノ粒子からなるシェルとを含むコア−シェル構造を有することを特徴とするナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子。 - 上記半導体ナノワイヤーの材料は、Si、GaN、BN、InP、GaAs、GaP、Si3N4 、SiC、及びZnO並びにそれらの混合物からなる群より選択されることを特徴とする請求項1に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子。
- 上記絶縁体層の材料は、Al2O3、HfO2、SiO2、MgO、ZrO2、BaO、SrTiO3、La2O3、HfSiO4、ZrSiO4、CaO、LaAlO3、SrO、CaO及び有機絶縁体からなる群より選択されることを特徴とする請求項1に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子。
- 半導体ナノワイヤー複合体を形成する段階と;
上記半導体ナノワイヤー複合体の上にフォトリソグラフィ又は電子ビームリソグラフィ方式を利用して半導体ナノワイヤーの中央部分にゲート電極を形成する段階と;
上記半導体ナノワイヤー複合体/ゲート電極構造の試料をSiO2が形成されたシリコン、半導体、ガラス又はプラスチック基板に塗布する段階と;
上記シリコン、半導体、ガラス又はプラスチック基板の上部にフォトリソグラフィ又は電子ビームリソグラフィ方式を利用してソース電極及びドレイン電極を上記半導体ナノワイヤー両端に形成する段階とを含み、
上記半導体ナノワイヤー複合体を形成する段階は、
コア−シェル構造のナノ粒子を上記半導体ナノワイヤーの上に吸着する段階と;
上記コア−シェル構造のナノ粒子にスパッタリング、CVD及び原子層蒸着法からなる群より選択される方法を利用して絶縁体層をコーティングする段階とを含むことを特徴とするナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子製造方法。 - 不揮発性メモリー電子素子の製造方法において
半導体基板の上部にHMDS(ヘキサメチルジシラザン:Hexamethyldisilazane)層を塗布して半導体ナノワイヤーを上記HMDSの上に形成させる段階;
上記半導体ナノワイヤーが形成されたHMDS層の上部の上記半導体ナノワイヤーの両端にソース電極とドレイン電極を形成する段階;
上記半導体ナノワイヤーを包むようにスパッタリング、CVD及び原子層蒸着法からなる群より選択される方法を利用してトンネリング層を形成する段階;
上記半導体ナノワイヤーと異種の金属ナノ粒子を上記トンネリング層の表面に形成させて、上記トンネリング層を包むように電荷蓄積層を形成する段階;
上記電荷蓄積層を包むようにスパッタリング、CVD及び原子層蒸着法からなる群より選択される方法を利用して絶縁体層を形成する段階;
上記ソース電極とドレイン電極間の上記絶縁体層の上部にゲート電極を形成する段階を含み、
上記電荷蓄積層を形成する段階は、
上記トンネリングの表面に熱蒸着法を利用して金属ナノフィルムをコーティングする段階と;
急速熱処理機(RTA)で上記金属ナノフィルムを加熱して上記金属ナノ粒子を形成する段階とを含むことを特徴とするナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記半導体ナノワイヤーを形成する段階は、熱蒸発法によって半導体ナノワイヤーが半導体基板の上に成長させられることを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記半導体ナノワイヤーを形成する段階は、
エッチング法によって上記半導体基板をエッチングする段階を含むことを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記金属ナノフィルムをコーティングする段階は、金属ナノフィルムを2〜10nmの厚さでコーティングすることを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記金属ナノ粒子を形成する段階は、上記金属ナノフィルムを250℃〜450℃の温度で5〜30秒間加熱することを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 不揮発性メモリー電子素子の製造方法において、
半導体基板の上に成長させられた半導体ナノワイヤーの表面にスパッタリング、CVD及び原子層蒸着法からなる群より選択される方法を利用してトンネリング層をコーティングする段階;
上記半導体ナノワイヤーの表面にコーティングされたトンネリング層に、電荷蓄積層を構成するナノ粒子を吸着させる段階;
半導体基板の上部にHMDS(ヘキサメチルジシラザン:Hexamethyldisilazane)層を塗布して上記トンネリング層、上記電荷蓄積層及び絶縁体層が順次表面に形成された上記半導体ナノワイヤーを上記HMDSの上に形成させる段階;
上記半導体ナノワイヤーが形成されたHMDS層の上部の上記半導体ナノワイヤーの両端にソース電極とドレイン電極を形成する段階;及び
上記ソース電極とドレイン電極の間の絶縁体層の上にゲート電極を形成する段階を含み、
上記ソース電極とドレイン電極を形成する段階は、
第一のフォトレジストを塗布してフォトリソグラフィ法を利用して複数個の第一の空間部を形成する段階と;
上記第一の空間部及び上記第一のフォトレジストの上に金属層を積層して上記第一のフォトレジスト及び上記HMDS層を除去して上記半導体ナノワイヤーの両端にソース電極とドレイン電極を形成する段階とを含み、
上記ゲート電極を形成する段階は、
上記絶縁体層と上記ソース電極及び上記ドレイン電極が形成されている半導体基板の上部に、第二のフォトレジストを塗布してフォトリソグラフィ法を利用して上記ソース電極及び上記ドレイン電極の間に第二の空間部を形成する段階と;
上記第二の空間部及び第二のフォトレジストの上に金属層を積層して上記第二のフォトレジストを除去してゲート電極を形成する段階とを含むことを特徴とするナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記半導体基板は、Si及びAl2O3からなる群より選択される物質で構成されることを特徴とする請求項10に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記ナノ粒子を吸着させる段階は、
上記成長された半導体ナノワイヤーが付いた半導体基板を分散水溶液に浸してから超音波を利用して上記半導体ナノワイヤーを分散させる段階と;
上記半導体ナノワイヤー分散水溶液とナノ粒子が入っている分散水溶液を混合する段階と;
超音波を利用して上記半導体ナノワイヤーにナノ粒子を吸着させる段階とを含むことを特徴とする請求項10に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記分散水溶液は、蒸留水、アルコール、メチル・アルコール及びアセトンからなる群より選択される一つを使用することを特徴とする請求項12に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記ナノ粒子を吸着させる段階は、上記半導体ナノワイヤーをナノ粒子が入っている溶液に混合させてナノ粒子を吸着させることを特徴とする請求項10に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記ナノ粒子を吸着させる段階は、上記半導体ナノワイヤーにLPCVD方法でSi層を蒸着してからウェットエッチング(wet etching)法でポリ(poly)−Siナノ粒子を生成させることを特徴とする請求項10に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記ソース電極及び上記ドレイン電極を形成する段階は、
第一のフォトレジストを塗布してフォトリソグラフィ法を利用して複数個の第一の空間部を形成する段階と;
上記第一の空間部及び上記第一のフォトレジストの上に金属層を積層して上記第一のフォトレジスト及び上記HMDS層を除去して上記半導体ナノワイヤーの両端にソース電極とドレイン電極を形成する段階とを含むことを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記トンネリング層及び絶縁体層を形成する段階は、Al2O3、HfO2及びSiO2からなる群より選択される物質を原子層蒸着法で形成することを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記トンネリング層及び絶縁体層をAl2O3に形成する場合、
TMA(トリメチルアルミニウム:Trimethylauminum)とH2Oが使用されることを特徴とする請求項17に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。 - 上記トンネリング層は、5〜30nmの厚さに形成されることを特徴とする請求項17に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記絶縁体層は、10〜60nmの厚さに形成されることを特徴とする請求項17に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記半導体ナノワイヤーを形成する段階は、上記半導体ナノワイヤーの代わりに炭素ナノチューブ(CNT)又は有機チューブを形成することを含むことを特徴とする請求項5又は10に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
- 上記ゲート電極を形成する段階は、
上記絶縁体層と上記ソース電極及び上記ドレイン電極が形成されている半導体基板の上部に第二のフォトレジストを塗布してフォトリソグラフィ法を利用して上記ソース電極及び上記ドレイン電極の間に第二の空間部を形成する段階と;
上記第二の空間部及び第二のフォトレジストの上に金属層を積層して上記第二のフォトレジストを除去してゲート電極を形成する段階とを含むことを特徴とする請求項5に記載のナノワイヤーチャンネルとナノ粒子−フローティングゲートノードを具備した不揮発性メモリー電子素子の製造方法。
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KR1020070018271A KR100850905B1 (ko) | 2007-02-23 | 2007-02-23 | 나노선나노입자 이종결합의 비휘발성 메모리 전자소자 및그 제조방법 |
KR1020070018259A KR100885193B1 (ko) | 2007-02-23 | 2007-02-23 | 나노선나노입자 이종결합의 비휘발성 메모리 전자소자 제조방법 |
KR10-2007-0018271 | 2007-02-23 | ||
KR10-2007-0018259 | 2007-02-23 |
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US8815683B2 (en) | 2014-08-26 |
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GB0802436D0 (en) | 2008-03-19 |
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