JP5552256B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5552256B2
JP5552256B2 JP2009100063A JP2009100063A JP5552256B2 JP 5552256 B2 JP5552256 B2 JP 5552256B2 JP 2009100063 A JP2009100063 A JP 2009100063A JP 2009100063 A JP2009100063 A JP 2009100063A JP 5552256 B2 JP5552256 B2 JP 5552256B2
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JP
Japan
Prior art keywords
film
conductive film
wiring
insulating film
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009100063A
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English (en)
Japanese (ja)
Other versions
JP2009278078A5 (OSRAM
JP2009278078A (ja
Inventor
舜平 山崎
潤 小山
英明 宍戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009100063A priority Critical patent/JP5552256B2/ja
Publication of JP2009278078A publication Critical patent/JP2009278078A/ja
Publication of JP2009278078A5 publication Critical patent/JP2009278078A5/ja
Application granted granted Critical
Publication of JP5552256B2 publication Critical patent/JP5552256B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009100063A 2008-04-18 2009-04-16 半導体装置 Expired - Fee Related JP5552256B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009100063A JP5552256B2 (ja) 2008-04-18 2009-04-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008108896 2008-04-18
JP2008108896 2008-04-18
JP2009100063A JP5552256B2 (ja) 2008-04-18 2009-04-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2009278078A JP2009278078A (ja) 2009-11-26
JP2009278078A5 JP2009278078A5 (OSRAM) 2012-04-12
JP5552256B2 true JP5552256B2 (ja) 2014-07-16

Family

ID=41200418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009100063A Expired - Fee Related JP5552256B2 (ja) 2008-04-18 2009-04-16 半導体装置

Country Status (2)

Country Link
US (1) US8106474B2 (OSRAM)
JP (1) JP5552256B2 (OSRAM)

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US9180278B2 (en) * 2008-08-11 2015-11-10 Terumo Kabushiki Kaisha Medical instrument
KR101837102B1 (ko) * 2009-10-30 2018-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101945171B1 (ko) 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120106786A (ko) * 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011074409A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2012147393A (ja) * 2011-01-14 2012-08-02 Fujifilm Corp 放射線画像撮影装置、放射線画像撮影プログラム、及び放射線画像撮影方法
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
US9064694B2 (en) * 2012-07-12 2015-06-23 Tokyo Electron Limited Nitridation of atomic layer deposited high-k dielectrics using trisilylamine
JP2014120615A (ja) * 2012-12-17 2014-06-30 Fujitsu Semiconductor Ltd 容量素子、容量アレイおよびａ／ｄ変換器
EP2778715A1 (en) * 2013-03-14 2014-09-17 Agfa Healthcare A pixel unit for a radiographic image detecting apparatus
CN203811938U (zh) * 2014-05-14 2014-09-03 北京京东方光电科技有限公司 一种显示面板和显示装置
US11205669B2 (en) * 2014-06-09 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including photoelectric conversion element
US9431363B1 (en) * 2014-11-25 2016-08-30 Automated Assembly Corporation Wire bonded IC components to round wire
JP6426068B2 (ja) 2015-08-10 2018-11-21 朝日インテック株式会社 カテーテル及びバルーンカテーテル
US9911756B2 (en) * 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
US9595501B1 (en) 2015-10-30 2017-03-14 Automated Assembly Corporation Wire bonded electronic devices to round wire
US9484209B1 (en) 2015-11-20 2016-11-01 International Business Machines Corporation Flexible and stretchable sensors formed by patterned spalling
CN108511411B (zh) * 2017-02-28 2021-09-10 株式会社村田制作所 半导体装置
US11227862B2 (en) 2017-02-28 2022-01-18 Murata Manufacturing Co., Ltd. Semiconductor device
US10381325B1 (en) 2017-08-04 2019-08-13 Automated Assembly Corporation Guide posts for wire bonding
JP6991816B2 (ja) * 2017-09-29 2022-01-13 キヤノン株式会社 半導体装置および機器
US10171133B1 (en) 2018-02-20 2019-01-01 Automated Assembly Corporation Transponder arrangement
US20250169175A1 (en) * 2022-03-04 2025-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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JP2721909B2 (ja) * 1989-01-18 1998-03-04 三菱電機株式会社 半導体記憶装置
JPH0511667A (ja) 1991-07-02 1993-01-22 Mitsubishi Electric Corp 電子写真画像形成装置
JP3184251B2 (ja) * 1991-07-25 2001-07-09 株式会社日立製作所 半導体装置
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JP3522144B2 (ja) * 1999-02-25 2004-04-26 富士通株式会社 容量回路および半導体集積回路装置
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Also Published As

Publication number Publication date
US20090261444A1 (en) 2009-10-22
US8106474B2 (en) 2012-01-31
JP2009278078A (ja) 2009-11-26

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