JP5546222B2 - 固体撮像装置及び製造方法 - Google Patents

固体撮像装置及び製造方法 Download PDF

Info

Publication number
JP5546222B2
JP5546222B2 JP2009276834A JP2009276834A JP5546222B2 JP 5546222 B2 JP5546222 B2 JP 5546222B2 JP 2009276834 A JP2009276834 A JP 2009276834A JP 2009276834 A JP2009276834 A JP 2009276834A JP 5546222 B2 JP5546222 B2 JP 5546222B2
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor region
region
solid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009276834A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011119543A5 (enExample
JP2011119543A (ja
Inventor
高典 渡邉
政次 板橋
昌弘 小林
秀央 小林
哲也 札場
武史 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009276834A priority Critical patent/JP5546222B2/ja
Priority to PCT/JP2010/006947 priority patent/WO2011067916A1/en
Priority to US13/512,313 priority patent/US20120267747A1/en
Priority to CN201080054061.6A priority patent/CN102630343B/zh
Publication of JP2011119543A publication Critical patent/JP2011119543A/ja
Publication of JP2011119543A5 publication Critical patent/JP2011119543A5/ja
Application granted granted Critical
Publication of JP5546222B2 publication Critical patent/JP5546222B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009276834A 2009-12-04 2009-12-04 固体撮像装置及び製造方法 Active JP5546222B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009276834A JP5546222B2 (ja) 2009-12-04 2009-12-04 固体撮像装置及び製造方法
PCT/JP2010/006947 WO2011067916A1 (en) 2009-12-04 2010-11-29 Solid-state image pickup device and method for manufacturing the same
US13/512,313 US20120267747A1 (en) 2009-12-04 2010-11-29 Solid-state image pickup device and method for manufacturing the same
CN201080054061.6A CN102630343B (zh) 2009-12-04 2010-11-29 固态图像拾取装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009276834A JP5546222B2 (ja) 2009-12-04 2009-12-04 固体撮像装置及び製造方法

Publications (3)

Publication Number Publication Date
JP2011119543A JP2011119543A (ja) 2011-06-16
JP2011119543A5 JP2011119543A5 (enExample) 2013-01-17
JP5546222B2 true JP5546222B2 (ja) 2014-07-09

Family

ID=43534367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009276834A Active JP5546222B2 (ja) 2009-12-04 2009-12-04 固体撮像装置及び製造方法

Country Status (4)

Country Link
US (1) US20120267747A1 (enExample)
JP (1) JP5546222B2 (enExample)
CN (1) CN102630343B (enExample)
WO (1) WO2011067916A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8742309B2 (en) 2011-01-28 2014-06-03 Aptina Imaging Corporation Imagers with depth sensing capabilities
US10015471B2 (en) * 2011-08-12 2018-07-03 Semiconductor Components Industries, Llc Asymmetric angular response pixels for single sensor stereo
US9554115B2 (en) * 2012-02-27 2017-01-24 Semiconductor Components Industries, Llc Imaging pixels with depth sensing capabilities
TWI595637B (zh) * 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6355311B2 (ja) 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
JP2016051896A (ja) * 2014-08-29 2016-04-11 キヤノン株式会社 固体撮像装置及びその製造方法ならびにカメラ
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
JP2018139328A (ja) * 2018-06-05 2018-09-06 キヤノン株式会社 固体撮像装置および撮像システム
WO2020095689A1 (ja) * 2018-11-06 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子、および電子機器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3353277B2 (ja) * 1992-09-25 2002-12-03 ソニー株式会社 エピタキシャルウェハの製造方法
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP4269033B2 (ja) * 2002-03-05 2009-05-27 シャープ株式会社 受光素子及びその製造方法、並びに、回路内蔵型受光素子及びその製造方法
US7230247B2 (en) * 2002-03-08 2007-06-12 Hamamatsu Photonics K.K. Detector
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
EP1548836B1 (en) * 2002-08-09 2008-06-18 Hamamatsu Photonics K. K. Photodiode array and radiation detector
JP4208559B2 (ja) * 2002-12-03 2009-01-14 キヤノン株式会社 光電変換装置
DE10306295A1 (de) * 2003-02-14 2004-09-02 Infineon Technologies Ag Photosensor-Anordnung und Verfahren zum Herstellen einer Photosensor-Anordnung
JP4220818B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JP3977285B2 (ja) * 2003-05-15 2007-09-19 キヤノン株式会社 固体撮像素子の製造方法
JP2004047985A (ja) * 2003-06-10 2004-02-12 Sony Corp 固体撮像装置
JP4046067B2 (ja) * 2003-11-04 2008-02-13 ソニー株式会社 固体撮像素子の製造方法
JP2005150521A (ja) * 2003-11-18 2005-06-09 Canon Inc 撮像装置およびその製造方法
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
WO2005109512A1 (en) * 2004-05-06 2005-11-17 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP4211696B2 (ja) * 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
JP5104036B2 (ja) * 2007-05-24 2012-12-19 ソニー株式会社 固体撮像素子とその製造方法及び撮像装置
JP5167693B2 (ja) 2007-05-24 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
JP5157259B2 (ja) * 2007-05-29 2013-03-06 ソニー株式会社 固体撮像素子及び撮像装置
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
US20090242939A1 (en) * 2008-03-25 2009-10-01 Sumco Corporation Wafer for backside illumination type solid imaging device, production method thereof and backside illumination solid imaging device
JP2009276834A (ja) 2008-05-12 2009-11-26 Burein:Kk クラッシュ加工シミュレーション画像生成方法、システム、プログラム及び記録媒体
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
US8618458B2 (en) * 2008-11-07 2013-12-31 Omnivision Technologies, Inc. Back-illuminated CMOS image sensors

Also Published As

Publication number Publication date
CN102630343B (zh) 2015-09-30
WO2011067916A1 (en) 2011-06-09
CN102630343A (zh) 2012-08-08
JP2011119543A (ja) 2011-06-16
US20120267747A1 (en) 2012-10-25

Similar Documents

Publication Publication Date Title
US11276722B2 (en) Solid-state image sensor and method of manufacturing the same
JP5546222B2 (ja) 固体撮像装置及び製造方法
US7855407B2 (en) CMOS image sensor and method for manufacturing the same
CN1812112B (zh) 具有非平面晶体管的固态图像传感器设备及其制造方法
US8754458B2 (en) Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and electronic unit
JP2010003928A (ja) 固体撮像装置及びその製造方法
US20140191290A1 (en) Solid-state imaging element
JP6612139B2 (ja) 半導体装置
CN1638134B (zh) 固态图像拾取装置
JP2010278472A (ja) 固体撮像装置の製造方法
JP2013157639A (ja) 固体撮像装置
US20100140668A1 (en) Shallow trench isolation regions in image sensors
TWI254450B (en) Photoelectric conversion device and manufacturing method thereof
JP2006049888A (ja) イメージセンサー及びその製造方法
CN101221968B (zh) 固态成像装置、电子模块和电子设备
KR100640980B1 (ko) 씨모스 이미지 센서의 제조방법
JP5450633B2 (ja) 固体撮像装置およびその製造方法
JP2010267709A (ja) 固体撮像装置、電子機器、固体撮像装置の製造方法および電子機器の製造方法
JP2010251628A (ja) 固体撮像装置およびその製造方法
JP4115446B2 (ja) Ｃｍｏｓイメージセンサの製造方法
KR20100025873A (ko) 혼색 방지 불순물 격리 구조를 갖는 이미지 센서 및 그 제조 방법
KR100644523B1 (ko) 암신호를 감소시킬 수 있는 이미지센서의 제조 방법
CN118053885A (zh) 图像传感器和制造图像传感器的方法
US20080157149A1 (en) CMOS image sensor and method for manufacturing the same
JP2017143159A (ja) 撮像装置、及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140324

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140415

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140513

R151 Written notification of patent or utility model registration

Ref document number: 5546222

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151