CN102630343B - 固态图像拾取装置及其制造方法 - Google Patents

固态图像拾取装置及其制造方法 Download PDF

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Publication number
CN102630343B
CN102630343B CN201080054061.6A CN201080054061A CN102630343B CN 102630343 B CN102630343 B CN 102630343B CN 201080054061 A CN201080054061 A CN 201080054061A CN 102630343 B CN102630343 B CN 102630343B
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type semiconductor
semiconductor region
image pickup
solid
state image
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Chinese (zh)
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CN102630343A (zh
Inventor
渡边高典
板桥政次
小林昌弘
小林秀央
札场哲也
市川武史
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201080054061.6A 2009-12-04 2010-11-29 固态图像拾取装置及其制造方法 Active CN102630343B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009276834A JP5546222B2 (ja) 2009-12-04 2009-12-04 固体撮像装置及び製造方法
JP2009-276834 2009-12-04
PCT/JP2010/006947 WO2011067916A1 (en) 2009-12-04 2010-11-29 Solid-state image pickup device and method for manufacturing the same

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Publication Number Publication Date
CN102630343A CN102630343A (zh) 2012-08-08
CN102630343B true CN102630343B (zh) 2015-09-30

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US (1) US20120267747A1 (enExample)
JP (1) JP5546222B2 (enExample)
CN (1) CN102630343B (enExample)
WO (1) WO2011067916A1 (enExample)

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US8742309B2 (en) 2011-01-28 2014-06-03 Aptina Imaging Corporation Imagers with depth sensing capabilities
US10015471B2 (en) * 2011-08-12 2018-07-03 Semiconductor Components Industries, Llc Asymmetric angular response pixels for single sensor stereo
US9554115B2 (en) * 2012-02-27 2017-01-24 Semiconductor Components Industries, Llc Imaging pixels with depth sensing capabilities
TWI595637B (zh) * 2012-09-28 2017-08-11 新力股份有限公司 半導體裝置及電子機器
JP6355311B2 (ja) 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
JP2016051896A (ja) * 2014-08-29 2016-04-11 キヤノン株式会社 固体撮像装置及びその製造方法ならびにカメラ
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
JP2018139328A (ja) * 2018-06-05 2018-09-06 キヤノン株式会社 固体撮像装置および撮像システム
WO2020095689A1 (ja) * 2018-11-06 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子、および電子機器

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JP4269033B2 (ja) * 2002-03-05 2009-05-27 シャープ株式会社 受光素子及びその製造方法、並びに、回路内蔵型受光素子及びその製造方法
US7230247B2 (en) * 2002-03-08 2007-06-12 Hamamatsu Photonics K.K. Detector
JP3840203B2 (ja) * 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP4208559B2 (ja) * 2002-12-03 2009-01-14 キヤノン株式会社 光電変換装置
JP4220818B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
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JP2004047985A (ja) * 2003-06-10 2004-02-12 Sony Corp 固体撮像装置
JP4046067B2 (ja) * 2003-11-04 2008-02-13 ソニー株式会社 固体撮像素子の製造方法
JP2005150521A (ja) * 2003-11-18 2005-06-09 Canon Inc 撮像装置およびその製造方法
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
WO2005109512A1 (en) * 2004-05-06 2005-11-17 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP5167693B2 (ja) 2007-05-24 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
JP5157259B2 (ja) * 2007-05-29 2013-03-06 ソニー株式会社 固体撮像素子及び撮像装置
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
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JP2009276834A (ja) 2008-05-12 2009-11-26 Burein:Kk クラッシュ加工シミュレーション画像生成方法、システム、プログラム及び記録媒体
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
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US5405803A (en) * 1992-09-25 1995-04-11 Sony Corporation Method of manufacturing a semiconductor device
CN1675771A (zh) * 2002-08-09 2005-09-28 浜松光子学株式会社 光电二极管阵列、其制造方法和放射线检测器
DE10306295A1 (de) * 2003-02-14 2004-09-02 Infineon Technologies Ag Photosensor-Anordnung und Verfahren zum Herstellen einer Photosensor-Anordnung
CN1716628A (zh) * 2004-06-30 2006-01-04 索尼株式会社 固态成像装置、相机及制造固态成像装置的方法
CN101312204A (zh) * 2007-05-24 2008-11-26 索尼株式会社 固态成像装置及其生产方法以及成像设备

Also Published As

Publication number Publication date
WO2011067916A1 (en) 2011-06-09
CN102630343A (zh) 2012-08-08
JP2011119543A (ja) 2011-06-16
JP5546222B2 (ja) 2014-07-09
US20120267747A1 (en) 2012-10-25

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