JP5545488B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5545488B2 JP5545488B2 JP2010227239A JP2010227239A JP5545488B2 JP 5545488 B2 JP5545488 B2 JP 5545488B2 JP 2010227239 A JP2010227239 A JP 2010227239A JP 2010227239 A JP2010227239 A JP 2010227239A JP 5545488 B2 JP5545488 B2 JP 5545488B2
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- tray
- temperature
- plasma processing
- wafer
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- 238000006243 chemical reaction Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 81
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010227239A JP5545488B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマ処理装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2010227239A JP5545488B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012084574A JP2012084574A (ja) | 2012-04-26 |
JP2012084574A5 JP2012084574A5 (fr) | 2013-08-15 |
JP5545488B2 true JP5545488B2 (ja) | 2014-07-09 |
Family
ID=46243179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010227239A Active JP5545488B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマ処理装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5545488B2 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014139980A (ja) * | 2013-01-21 | 2014-07-31 | Hitachi High-Technologies Corp | 試料処理装置およびその方法並びに荷電粒子線装置 |
JP6363927B2 (ja) * | 2014-10-07 | 2018-07-25 | 大陽日酸株式会社 | 気相成長装置における基板搬送方法及び装置 |
CN106505017B (zh) * | 2016-10-25 | 2019-06-25 | 通富微电子股份有限公司 | 用于面板级扇出表面处理的工艺系统及方法 |
WO2018185835A1 (fr) * | 2017-04-04 | 2018-10-11 | 株式会社Fuji | Système de génération de plasma |
CN111489994A (zh) * | 2019-01-25 | 2020-08-04 | 上海和辉光电有限公司 | 一种上料机构、邦定机和上料方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2988167B2 (ja) * | 1992-11-27 | 1999-12-06 | 安藤電気株式会社 | 高温槽に加熱キャリアが循環するic搬送機構 |
JP3404608B2 (ja) * | 1994-09-28 | 2003-05-12 | 東芝機械株式会社 | 荷電ビーム描画装置等の試料温度調整装置及びこの装置に用いられる試料ホルダ |
JP4083306B2 (ja) * | 1998-08-28 | 2008-04-30 | 松下電器産業株式会社 | プラズマ処理後におけるリンス方法 |
JP2001345313A (ja) * | 2000-05-31 | 2001-12-14 | Ebara Corp | 基板処理装置 |
JP2007109771A (ja) * | 2005-10-12 | 2007-04-26 | Matsushita Electric Ind Co Ltd | プラズマ処理装置用のトレイ |
JP5145126B2 (ja) * | 2008-06-11 | 2013-02-13 | 株式会社アルバック | 接着装置及び接着方法 |
JP5417751B2 (ja) * | 2008-06-30 | 2014-02-19 | 株式会社ニコン | 接合装置および接合方法 |
-
2010
- 2010-10-07 JP JP2010227239A patent/JP5545488B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2012084574A (ja) | 2012-04-26 |
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