JP5543473B2 - 埋め込みプロセスの温度調整方法 - Google Patents
埋め込みプロセスの温度調整方法 Download PDFInfo
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- JP5543473B2 JP5543473B2 JP2011530165A JP2011530165A JP5543473B2 JP 5543473 B2 JP5543473 B2 JP 5543473B2 JP 2011530165 A JP2011530165 A JP 2011530165A JP 2011530165 A JP2011530165 A JP 2011530165A JP 5543473 B2 JP5543473 B2 JP 5543473B2
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- 238000000034 method Methods 0.000 title claims description 35
- 230000008569 process Effects 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 57
- 150000002500 ions Chemical class 0.000 claims description 26
- 238000005468 ion implantation Methods 0.000 claims description 25
- 239000002019 doping agent Substances 0.000 claims description 18
- 150000001793 charged compounds Chemical class 0.000 claims description 11
- 230000001965 increasing effect Effects 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 description 30
- 239000011737 fluorine Substances 0.000 description 30
- 230000007547 defect Effects 0.000 description 22
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 20
- 238000010884 ion-beam technique Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 13
- -1 B + Chemical class 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000005280 amorphization Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005742 Ge—C Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26593—Bombardment with radiation with high-energy radiation producing ion implantation at a temperature lower than room temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (6)
- イオン埋め込みプロセスの間に基板中の不要な二次ドーパントを最小限にする方法であって、
a.前記プロセスの第1の部分の間に第1の温度で前記基板に分子イオンを埋め込み、前記分子イオンを、前記基板との衝突により、所望の一次ドーパントおよび不要な二次ドーパントに分ける工程、および
b.前記埋め込みプロセスの第2の部分の間に前記基板の温度を上昇させ、前記不要な二次ドーパントを前記基板の表面から拡散させる工程、
を備えることを特徴とする方法。 - 前記第1の温度が室温未満である、請求項1に記載の方法。
- 前記第1の温度が−100℃と−10℃との間である、請求項2に記載の方法。
- 前記温度が室温を超えて上昇する、請求項1に記載の方法。
- 前記温度が100℃を超えた温度まで上昇する、請求項4に記載の方法。
- 埋め込みプロセスの間にイオンを基板に埋め込むための方法であって、
a.一定でない温度プロファイルを作製する工程、
b.第1の温度で前記イオン埋め込みプロセスの第1の部分を前記基板に埋め込む工程、および
c.第2の温度で前記イオン埋め込みプロセスの第2の部分を前記基板に埋め込む工程、
を備え、
前記プロファイルが正弦曲線である、ことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/243,992 US7868306B2 (en) | 2008-10-02 | 2008-10-02 | Thermal modulation of implant process |
US12/243,992 | 2008-10-02 | ||
PCT/US2009/058988 WO2010039807A2 (en) | 2008-10-02 | 2009-09-30 | Thermal modulation of implant process |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012506132A JP2012506132A (ja) | 2012-03-08 |
JP2012506132A5 JP2012506132A5 (ja) | 2012-10-25 |
JP5543473B2 true JP5543473B2 (ja) | 2014-07-09 |
Family
ID=42074178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011530165A Active JP5543473B2 (ja) | 2008-10-02 | 2009-09-30 | 埋め込みプロセスの温度調整方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7868306B2 (ja) |
JP (1) | JP5543473B2 (ja) |
KR (1) | KR20110074569A (ja) |
CN (1) | CN102203913B (ja) |
TW (1) | TWI451482B (ja) |
WO (1) | WO2010039807A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598006B2 (en) * | 2010-03-16 | 2013-12-03 | International Business Machines Corporation | Strain preserving ion implantation methods |
US8039374B2 (en) * | 2010-03-19 | 2011-10-18 | Advanced Ion Beam Technology, Inc. | Method for low temperature ion implantation |
US8124508B2 (en) | 2010-03-31 | 2012-02-28 | Advanced Ion Beam Technology, Inc. | Method for low temperature ion implantation |
US8586460B2 (en) * | 2010-09-23 | 2013-11-19 | Varian Semiconductor Equipment Associates, Inc. | Controlling laser annealed junction depth by implant modification |
KR101215649B1 (ko) * | 2011-02-14 | 2012-12-26 | 에스케이하이닉스 주식회사 | 반도체 소자의 형성방법 |
US8536072B2 (en) * | 2012-02-07 | 2013-09-17 | United Microelectronics Corp. | Semiconductor process |
US8999800B2 (en) | 2012-12-12 | 2015-04-07 | Varian Semiconductor Equipment Associates, Inc. | Method of reducing contact resistance |
KR102274771B1 (ko) * | 2014-03-10 | 2021-07-09 | 에스케이하이닉스 주식회사 | 트랜지스터, 트랜지스터의 제조 방법 및 트랜지스터를 포함하는 전자장치 |
KR20160061615A (ko) * | 2014-11-24 | 2016-06-01 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
WO2016148855A1 (en) | 2015-03-19 | 2016-09-22 | Applied Materials, Inc. | Method and apparatus for reducing radiation induced change in semiconductor structures |
JP6508030B2 (ja) * | 2015-12-17 | 2019-05-08 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4453080A (en) * | 1981-07-20 | 1984-06-05 | Varian Associates, Inc. | Temperature control of a workpiece under ion implantation |
JPS62235726A (ja) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS6321825A (ja) * | 1986-07-15 | 1988-01-29 | Sony Corp | 半導体装置の製造方法 |
JP2664416B2 (ja) * | 1988-06-15 | 1997-10-15 | 三洋電機株式会社 | 半導体装置の製造方法 |
JPH03269940A (ja) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | イオン注入装置及びそれを用いた半導体集積回路装置の製造方法 |
JPH0366122A (ja) * | 1989-08-04 | 1991-03-20 | Hitachi Ltd | イオン打込み方法および装置ならびにそれを用いて製造される半導体集積回路装置 |
US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
JPH04196525A (ja) * | 1990-11-28 | 1992-07-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP3100230B2 (ja) * | 1992-07-16 | 2000-10-16 | 株式会社日立製作所 | 半導体基板への添加物イオン注入方法 |
JP3514912B2 (ja) * | 1995-08-31 | 2004-04-05 | 東芝電子エンジニアリング株式会社 | 薄膜トランジスタの製造方法 |
JPH09219173A (ja) * | 1996-02-09 | 1997-08-19 | Nissin Electric Co Ltd | イオン注入装置 |
US6239441B1 (en) * | 1997-01-20 | 2001-05-29 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device |
DE60211190T2 (de) * | 2001-10-12 | 2006-10-26 | Siltronic Ag | Verfahren zur herstellung einer halbleiter-schichtstruktur und entsprechende struktur |
US6703293B2 (en) * | 2002-07-11 | 2004-03-09 | Sharp Laboratories Of America, Inc. | Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates |
JP2005005406A (ja) * | 2003-06-10 | 2005-01-06 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
EP1787321A4 (en) * | 2004-12-03 | 2008-12-03 | Tel Epion Inc | TRAINING OF ULTRASONIC TRANSITIONS THROUGH GASCLUSTER ION RADIATION |
JP2007208023A (ja) * | 2006-02-02 | 2007-08-16 | Sumco Corp | Simoxウェーハの製造方法 |
TW200814162A (en) * | 2006-07-25 | 2008-03-16 | Silicon Genesis Corp | Method and system for continuous large-area scanning implantation process |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
US20080090393A1 (en) * | 2006-10-10 | 2008-04-17 | Wolfgang Aderhold | Ultra shallow junction with rapid thermal anneal |
US7642150B2 (en) * | 2006-11-08 | 2010-01-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming shallow junctions |
US7528392B2 (en) * | 2006-11-27 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for low-temperature ion implantation |
US7807961B2 (en) * | 2008-10-08 | 2010-10-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for ion implantation of molecular ions |
-
2008
- 2008-10-02 US US12/243,992 patent/US7868306B2/en active Active
-
2009
- 2009-09-30 WO PCT/US2009/058988 patent/WO2010039807A2/en active Application Filing
- 2009-09-30 JP JP2011530165A patent/JP5543473B2/ja active Active
- 2009-09-30 KR KR1020117009721A patent/KR20110074569A/ko active Search and Examination
- 2009-09-30 CN CN200980143910.2A patent/CN102203913B/zh active Active
- 2009-10-01 TW TW098133394A patent/TWI451482B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2012506132A (ja) | 2012-03-08 |
WO2010039807A3 (en) | 2010-07-15 |
CN102203913B (zh) | 2014-12-10 |
TW201019378A (en) | 2010-05-16 |
CN102203913A (zh) | 2011-09-28 |
US7868306B2 (en) | 2011-01-11 |
US20100084580A1 (en) | 2010-04-08 |
WO2010039807A2 (en) | 2010-04-08 |
TWI451482B (zh) | 2014-09-01 |
KR20110074569A (ko) | 2011-06-30 |
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