JP5710272B2 - 希釈ガスを用いるエタン注入 - Google Patents
希釈ガスを用いるエタン注入 Download PDFInfo
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- JP5710272B2 JP5710272B2 JP2010546103A JP2010546103A JP5710272B2 JP 5710272 B2 JP5710272 B2 JP 5710272B2 JP 2010546103 A JP2010546103 A JP 2010546103A JP 2010546103 A JP2010546103 A JP 2010546103A JP 5710272 B2 JP5710272 B2 JP 5710272B2
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- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 title claims description 29
- 238000010790 dilution Methods 0.000 title description 10
- 239000012895 dilution Substances 0.000 title description 10
- 238000002347 injection Methods 0.000 title description 5
- 239000007924 injection Substances 0.000 title description 5
- 239000007789 gas Substances 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 48
- 229910052799 carbon Inorganic materials 0.000 claims description 48
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 27
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 229930195733 hydrocarbon Natural products 0.000 claims description 12
- 150000002430 hydrocarbons Chemical class 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 10
- 229910052756 noble gas Inorganic materials 0.000 claims description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000002835 noble gases Chemical class 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000004949 mass spectrometry Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 56
- 238000002513 implantation Methods 0.000 description 14
- 239000003085 diluting agent Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005465 channeling Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electron Tubes For Measurement (AREA)
- Materials For Medical Uses (AREA)
Description
Claims (13)
- 炭素含有イオン化種の生成を増加する方法であって、
炭化水素をイオンチャンバ内に供給するステップと、
希ガスを前記イオンチャンバ内に供給するステップと、
前記炭化水素及び前記希ガスをイオン化してイオンビームにするステップであって、前記炭化水素が、前記希ガスの存在により、前記希ガス無しで創出される電流よりも高い、炭素含有イオン化種の電流を前記イオンチャンバ内に創出し、前記希ガス無しで創出される電流よりも低い、水素のみで構成されるイオン化種の電流を前記イオンチャンバ内に創出するステップと、
前記炭素含有イオン化種の質量分析を行うステップと、
前記炭素含有イオン化種を基板に注入するステップと、を有することを特徴とする、炭素含有イオン化種の生成を増加する方法。 - 前記炭化水素は、アルカンを含む、請求項1に記載の方法。
- 前記炭化水素は、エタンを含む、請求項2に記載の方法。
- 前記希ガスは、アルゴンを含む、請求項1に記載の方法。
- 基板に注入される炭素含有イオン化種の電流を増加する方法であって、
炭化水素をイオン化してイオンビームにするのに適合されるイオンチャンバと、前記イオンビームの選択した種のみを通すのに適合される質量分析器とを備えている、イオン注入システムを利用するステップと、
前記炭化水素を前記イオンチャンバ内に入れるステップと、
希ガスを前記イオンチャンバ内に入れるステップと、
前記炭化水素及び前記希ガスをイオン化するステップであって、前記炭化水素が、前記希ガスの存在により、前記希ガス無しで創出される電流よりも高い、炭素含有イオン化種の電流を前記質量分析器の上流に創出し、前記希ガス無しで創出される電流よりも低い、水素のみで構成されるイオン化種の電流を前記質量分析器の上流に創出するステップと、
前記質量分析器を用いて炭素を含まない種を除去するステップと、を有することを特徴とする、基板に注入される炭素含有イオン化種の電流を増加する方法。 - 前記質量分析器を用いて前記希ガスを含む種を除去するステップをさらに有する、請求項5に記載の方法。
- 前記炭化水素は、アルカンを含む、請求項5に記載の方法。
- 前記炭化水素は、エタンを含む、請求項7に記載の方法。
- 前記希ガスは、アルゴンを含む、請求項5に記載の方法。
- 前記質量分析器を用いて炭素のみで構成されていない種を除去するステップをさらに有する、請求項5に記載の方法。
- 炭素含有イオン化種を基板に注入する方法であって、
エタンをイオン化してイオンビームにするのに適合されるイオンチャンバと、前記イオンビームの選択した種のみを通すのに適合される質量分析器とを備えている、イオン注入システムを利用するステップと、
エタンを前記イオンチャンバ内に供給するステップと、
アルゴンを前記イオンチャンバ内に供給するステップと、
エタン及びアルゴンをイオン化するステップであって、前記エタンは、前記アルゴンの存在により、前記アルゴン無しで創出される電流よりも高い炭素含有イオン化種の電流を前記イオンチャンバ内に創出し、前記アルゴン無しで創出される電流よりも低い、水素のみで構成されるイオン化種の電流を前記イオンチャンバ内に創出する、ステップと、
ポンプを用いて、前記イオンビーム内の、前記炭素含有イオン化種を増加し水素を減少するステップと、
前記質量分析器を用いて前記イオンビームから炭素を含まない種を除去するステップと、
前記炭素含有イオン化種を前記基板に注入するステップと、を有する、炭素含有イオン化種を基板に注入する方法。 - 前記質量分析器は、アルゴンを含む種を除去するために用いる、請求項11に記載の方法。
- 前記質量分析器は、炭素のみで構成されていない種を除去するために用いる、請求項11に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2754508P | 2008-02-11 | 2008-02-11 | |
US61/027,545 | 2008-02-11 | ||
US12/367,741 | 2009-02-09 | ||
US12/367,741 US8003957B2 (en) | 2008-02-11 | 2009-02-09 | Ethane implantation with a dilution gas |
PCT/US2009/033740 WO2009102754A2 (en) | 2008-02-11 | 2009-02-11 | Ethane implantation with a dilution gas |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011514668A JP2011514668A (ja) | 2011-05-06 |
JP2011514668A5 JP2011514668A5 (ja) | 2012-03-01 |
JP5710272B2 true JP5710272B2 (ja) | 2015-04-30 |
Family
ID=40938100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010546103A Expired - Fee Related JP5710272B2 (ja) | 2008-02-11 | 2009-02-11 | 希釈ガスを用いるエタン注入 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8003957B2 (ja) |
JP (1) | JP5710272B2 (ja) |
KR (1) | KR101524858B1 (ja) |
CN (1) | CN101939823B (ja) |
TW (1) | TWI443717B (ja) |
WO (1) | WO2009102754A2 (ja) |
Families Citing this family (8)
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US8524584B2 (en) | 2011-01-20 | 2013-09-03 | Axcelis Technologies, Inc. | Carbon implantation process and carbon ion precursor composition |
JP5665679B2 (ja) * | 2011-07-14 | 2015-02-04 | 住友重機械工業株式会社 | 不純物導入層形成装置及び静電チャック保護方法 |
US8937003B2 (en) | 2011-09-16 | 2015-01-20 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion implanting a target |
US9196452B2 (en) * | 2013-03-08 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for carbon ion source head |
US9524849B2 (en) | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
US9677171B2 (en) * | 2014-06-06 | 2017-06-13 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in a non-mass-analyzed ion implantation system |
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US7666771B2 (en) * | 2005-12-09 | 2010-02-23 | Semequip, Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
US20070178678A1 (en) | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
-
2009
- 2009-02-09 US US12/367,741 patent/US8003957B2/en not_active Expired - Fee Related
- 2009-02-11 CN CN2009801043529A patent/CN101939823B/zh not_active Expired - Fee Related
- 2009-02-11 KR KR1020107019482A patent/KR101524858B1/ko active IP Right Grant
- 2009-02-11 JP JP2010546103A patent/JP5710272B2/ja not_active Expired - Fee Related
- 2009-02-11 TW TW098104322A patent/TWI443717B/zh not_active IP Right Cessation
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WO2009102754A3 (en) | 2009-10-08 |
KR101524858B1 (ko) | 2015-06-01 |
CN101939823A (zh) | 2011-01-05 |
CN101939823B (zh) | 2012-07-18 |
WO2009102754A2 (en) | 2009-08-20 |
JP2011514668A (ja) | 2011-05-06 |
US20090200460A1 (en) | 2009-08-13 |
TWI443717B (zh) | 2014-07-01 |
US8003957B2 (en) | 2011-08-23 |
TW200947532A (en) | 2009-11-16 |
KR20100135733A (ko) | 2010-12-27 |
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