JP5534715B2 - 電子回路パターンの欠陥修正方法およびその装置 - Google Patents
電子回路パターンの欠陥修正方法およびその装置 Download PDFInfo
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
前記検査装置から受けとる検査データ受信手段と、
前記電子回路パターンの欠陥部に対して、可視光領域と赤外光領域の波長の照射光を照射し、電子回路パターンからの可視光領域と赤外光領域の波長の反射光を受光する撮像手段と、
前記撮像手段により得られた撮像画像から電子回路パターンの欠陥部を抽出し、修正方法を判定する信号処理手段と、
前記電子回路パターンの欠陥部にレーザ光を照射するレーザ照射手段と、 を有することを特徴とする。
短絡欠陥部の原因となる導電性の高い材料に対して、可視光領域及び赤外光領域の波長の双方の波長の撮像信号から前記短絡欠陥を検出し、
前記検出結果に基づいて、前記短絡欠陥にレーザを照射することにより電子回路パターンを修正することを特徴とする。
ドレイン電極およびソース電極との間の半導体層上における前記高濃度半導体層の残渣の有無を赤外光領域の波長の照射光による撮像によって検出することを特徴とする。
Claims (8)
- 検査装置の検査データに基づいて、基板上に形成した電子回路パターンの欠陥を修正して正常化するパターン欠陥修正装置であって、
前記電子回路パターンの欠陥部に対して、可視光領域と赤外光領域の波長の照射光を照射し、電子回路パターンからの可視光領域と赤外光領域の波長の反射光を受光する撮像手段と、
前記撮像手段により得られた撮像画像から電子回路パターンの欠陥部を抽出し、修正方法を判定する信号処理手段と、
前記電子回路パターンの欠陥部にレーザ光を照射するレーザ照射手段と、
を有することを特徴とする電子回路パターンの欠陥修正装置。 - 前記レーザ照射手段によるレーザ照射前後に、前記撮像手段が受光した反射光に基づいて、前記電子回路パターンの欠陥修正の成否を判定する修正判定手段と、
を有することを特徴とする請求項1の電子回路パターンの欠陥修正装置。 - 前記レーザ照射手段は、金属配線上に半導体層と絶縁体層が積層してなる電子回路パターンに対して、半導体層と絶縁体層のみを加工除去することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 前記撮像手段は、170nmから1500nmの範囲の光を用いて撮像することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 前記撮像手段は、可視光領域と赤外光領域の波長から欠陥位置情報を補正するための光学素子を有することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 基板上に、無機物もしくは有機物を成膜後、レジスト塗布、露光、現処理、エッチングを順次施すことによって形成した電子回路パターンを対象として、
短絡欠陥部の原因となる導電性の高い材料に対して、可視光領域及び赤外光領域の波長の双方の波長の撮像信号から前記短絡欠陥を検出し、
前記撮像信号に基づいて前記短絡欠陥を検出した結果に基づいて、前記短絡欠陥にレーザを照射することにより電子回路パターンを修正することを特徴とする電子回路パターンの欠陥修正方法。 - 前記レーザ照射は、金属配線上に、半導体層と絶縁体層が積層してなる電子回路パターンに対して、絶縁層を加工するためのレーザ波長と、半導体層を加工するためのレーザ波長の少なくとも2波長でのレーザ加工を行うことを特徴とする請求項6の電子回路パターンの欠陥修正方法。
- 半導体層の上面に高濃度半導体層を介してドレイン・ソース電極が形成された薄膜トランジスタを備える電子回路パターンの修正方法であって、
ドレイン電極およびソース電極との間の半導体層上における前記高濃度半導体層の残渣の有無を赤外光領域の波長の照射光による撮像によって検出することを特徴とする電子回路パターンの欠陥修正方法。
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JP2009127619A JP5534715B2 (ja) | 2009-05-27 | 2009-05-27 | 電子回路パターンの欠陥修正方法およびその装置 |
US12/784,936 US8957962B2 (en) | 2009-05-27 | 2010-05-21 | Defect correcting method and defect correcting device for an electronic circuit pattern |
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KR20170091706A (ko) * | 2014-12-02 | 2017-08-09 | 케이엘에이-텐코 코포레이션 | 검출이 향상된 검사 시스템 및 기술 |
KR102318273B1 (ko) | 2014-12-02 | 2021-10-26 | 케이엘에이 코포레이션 | 검출이 향상된 검사 시스템 및 기술 |
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