JP5534715B2 - 電子回路パターンの欠陥修正方法およびその装置 - Google Patents
電子回路パターンの欠陥修正方法およびその装置 Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims description 129
- 238000000034 method Methods 0.000 title claims description 52
- 239000010409 thin film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000007689 inspection Methods 0.000 claims description 30
- 238000003384 imaging method Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000002950 deficient Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000008685 targeting Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 61
- 239000010408 film Substances 0.000 description 31
- 239000004973 liquid crystal related substance Substances 0.000 description 28
- 238000010521 absorption reaction Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 206010027146 Melanoderma Diseases 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N2021/9513—Liquid crystal panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Description
前記検査装置から受けとる検査データ受信手段と、
前記電子回路パターンの欠陥部に対して、可視光領域と赤外光領域の波長の照射光を照射し、電子回路パターンからの可視光領域と赤外光領域の波長の反射光を受光する撮像手段と、
前記撮像手段により得られた撮像画像から電子回路パターンの欠陥部を抽出し、修正方法を判定する信号処理手段と、
前記電子回路パターンの欠陥部にレーザ光を照射するレーザ照射手段と、 を有することを特徴とする。
短絡欠陥部の原因となる導電性の高い材料に対して、可視光領域及び赤外光領域の波長の双方の波長の撮像信号から前記短絡欠陥を検出し、
前記検出結果に基づいて、前記短絡欠陥にレーザを照射することにより電子回路パターンを修正することを特徴とする。
ドレイン電極およびソース電極との間の半導体層上における前記高濃度半導体層の残渣の有無を赤外光領域の波長の照射光による撮像によって検出することを特徴とする。
Claims (8)
- 検査装置の検査データに基づいて、基板上に形成した電子回路パターンの欠陥を修正して正常化するパターン欠陥修正装置であって、
前記電子回路パターンの欠陥部に対して、可視光領域と赤外光領域の波長の照射光を照射し、電子回路パターンからの可視光領域と赤外光領域の波長の反射光を受光する撮像手段と、
前記撮像手段により得られた撮像画像から電子回路パターンの欠陥部を抽出し、修正方法を判定する信号処理手段と、
前記電子回路パターンの欠陥部にレーザ光を照射するレーザ照射手段と、
を有することを特徴とする電子回路パターンの欠陥修正装置。 - 前記レーザ照射手段によるレーザ照射前後に、前記撮像手段が受光した反射光に基づいて、前記電子回路パターンの欠陥修正の成否を判定する修正判定手段と、
を有することを特徴とする請求項1の電子回路パターンの欠陥修正装置。 - 前記レーザ照射手段は、金属配線上に半導体層と絶縁体層が積層してなる電子回路パターンに対して、半導体層と絶縁体層のみを加工除去することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 前記撮像手段は、170nmから1500nmの範囲の光を用いて撮像することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 前記撮像手段は、可視光領域と赤外光領域の波長から欠陥位置情報を補正するための光学素子を有することを特徴とする請求項1の電子回路パターンの欠陥修正装置。
- 基板上に、無機物もしくは有機物を成膜後、レジスト塗布、露光、現処理、エッチングを順次施すことによって形成した電子回路パターンを対象として、
短絡欠陥部の原因となる導電性の高い材料に対して、可視光領域及び赤外光領域の波長の双方の波長の撮像信号から前記短絡欠陥を検出し、
前記撮像信号に基づいて前記短絡欠陥を検出した結果に基づいて、前記短絡欠陥にレーザを照射することにより電子回路パターンを修正することを特徴とする電子回路パターンの欠陥修正方法。 - 前記レーザ照射は、金属配線上に、半導体層と絶縁体層が積層してなる電子回路パターンに対して、絶縁層を加工するためのレーザ波長と、半導体層を加工するためのレーザ波長の少なくとも2波長でのレーザ加工を行うことを特徴とする請求項6の電子回路パターンの欠陥修正方法。
- 半導体層の上面に高濃度半導体層を介してドレイン・ソース電極が形成された薄膜トランジスタを備える電子回路パターンの修正方法であって、
ドレイン電極およびソース電極との間の半導体層上における前記高濃度半導体層の残渣の有無を赤外光領域の波長の照射光による撮像によって検出することを特徴とする電子回路パターンの欠陥修正方法。
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JP2009127619A JP5534715B2 (ja) | 2009-05-27 | 2009-05-27 | 電子回路パターンの欠陥修正方法およびその装置 |
US12/784,936 US8957962B2 (en) | 2009-05-27 | 2010-05-21 | Defect correcting method and defect correcting device for an electronic circuit pattern |
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KR20170091706A (ko) * | 2014-12-02 | 2017-08-09 | 케이엘에이-텐코 코포레이션 | 검출이 향상된 검사 시스템 및 기술 |
KR102318273B1 (ko) | 2014-12-02 | 2021-10-26 | 케이엘에이 코포레이션 | 검출이 향상된 검사 시스템 및 기술 |
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