JP5534298B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5534298B2
JP5534298B2 JP2009143591A JP2009143591A JP5534298B2 JP 5534298 B2 JP5534298 B2 JP 5534298B2 JP 2009143591 A JP2009143591 A JP 2009143591A JP 2009143591 A JP2009143591 A JP 2009143591A JP 5534298 B2 JP5534298 B2 JP 5534298B2
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Japan
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region
conductivity type
main surface
type
semiconductor device
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Expired - Fee Related
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JP2009143591A
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English (en)
Japanese (ja)
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JP2011003608A (ja
JP2011003608A5 (enExample
Inventor
振一郎 柳
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009143591A priority Critical patent/JP5534298B2/ja
Priority to US12/782,475 priority patent/US20100314683A1/en
Publication of JP2011003608A publication Critical patent/JP2011003608A/ja
Publication of JP2011003608A5 publication Critical patent/JP2011003608A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009143591A 2009-06-16 2009-06-16 半導体装置 Expired - Fee Related JP5534298B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009143591A JP5534298B2 (ja) 2009-06-16 2009-06-16 半導体装置
US12/782,475 US20100314683A1 (en) 2009-06-16 2010-05-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009143591A JP5534298B2 (ja) 2009-06-16 2009-06-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2011003608A JP2011003608A (ja) 2011-01-06
JP2011003608A5 JP2011003608A5 (enExample) 2012-04-12
JP5534298B2 true JP5534298B2 (ja) 2014-06-25

Family

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JP2009143591A Expired - Fee Related JP5534298B2 (ja) 2009-06-16 2009-06-16 半導体装置

Country Status (2)

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US (1) US20100314683A1 (enExample)
JP (1) JP5534298B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8629026B2 (en) * 2010-11-12 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Source tip optimization for high voltage transistor devices
JP5898473B2 (ja) * 2011-11-28 2016-04-06 ルネサスエレクトロニクス株式会社 半導体装置
JP5784512B2 (ja) * 2012-01-13 2015-09-24 株式会社東芝 半導体装置
US9412881B2 (en) 2012-07-31 2016-08-09 Silanna Asia Pte Ltd Power device integration on a common substrate
US10290702B2 (en) 2012-07-31 2019-05-14 Silanna Asia Pte Ltd Power device on bulk substrate
JP5887233B2 (ja) * 2012-09-10 2016-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6120586B2 (ja) 2013-01-25 2017-04-26 ローム株式会社 ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子
CN104241354B (zh) * 2013-06-09 2018-03-06 中芯国际集成电路制造(上海)有限公司 Ldmos晶体管及其形成方法
US20160284801A1 (en) 2013-11-27 2016-09-29 Renesas Electronics Corporation Semiconductor device
JP6285831B2 (ja) * 2014-09-12 2018-02-28 株式会社東芝 半導体素子
US9911845B2 (en) 2015-12-10 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage LDMOS transistor and methods for manufacturing the same
US9583612B1 (en) * 2016-01-21 2017-02-28 Texas Instruments Incorporated Drift region implant self-aligned to field relief oxide with sidewall dielectric
JP6591312B2 (ja) 2016-02-25 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置
US10083897B2 (en) 2017-02-20 2018-09-25 Silanna Asia Pte Ltd Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
US9923059B1 (en) 2017-02-20 2018-03-20 Silanna Asia Pte Ltd Connection arrangements for integrated lateral diffusion field effect transistors
JP6368393B2 (ja) * 2017-02-22 2018-08-01 キヤノン株式会社 記録素子基板、記録ヘッド及び記録装置
KR102642021B1 (ko) * 2019-01-31 2024-02-29 매그나칩 반도체 유한회사 반도체 소자 및 그 제조방법
JP7195167B2 (ja) 2019-02-08 2022-12-23 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP6745937B2 (ja) * 2019-04-02 2020-08-26 ルネサスエレクトロニクス株式会社 半導体装置
JP7734005B2 (ja) * 2021-06-28 2025-09-04 ローム株式会社 半導体装置
JP2025089810A (ja) 2023-12-04 2025-06-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3244412B2 (ja) * 1995-10-31 2002-01-07 三洋電機株式会社 半導体集積回路
JP3397999B2 (ja) * 1996-12-27 2003-04-21 三洋電機株式会社 半導体装置の製造方法
JP3308505B2 (ja) * 1999-04-19 2002-07-29 セイコーインスツルメンツ株式会社 半導体装置
JP2002353441A (ja) * 2001-05-22 2002-12-06 Denso Corp パワーｍｏｓトランジスタ
US6882023B2 (en) * 2002-10-31 2005-04-19 Motorola, Inc. Floating resurf LDMOSFET and method of manufacturing same
US7095092B2 (en) * 2004-04-30 2006-08-22 Freescale Semiconductor, Inc. Semiconductor device and method of forming the same
JP2005347367A (ja) * 2004-06-01 2005-12-15 Toyota Motor Corp 半導体装置とその製造方法
EP1908121A4 (en) * 2005-07-18 2009-09-30 Texas Instruments Inc EXTENDED DRAIN MOS TRANSISTORS WITH DIODE FIXATION
US7791161B2 (en) * 2005-08-25 2010-09-07 Freescale Semiconductor, Inc. Semiconductor devices employing poly-filled trenches

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JP2011003608A (ja) 2011-01-06

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