JP5527729B2 - メモリ素子の駆動方法及びメモリ素子を備える記憶装置 - Google Patents

メモリ素子の駆動方法及びメモリ素子を備える記憶装置 Download PDF

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Publication number
JP5527729B2
JP5527729B2 JP2010189132A JP2010189132A JP5527729B2 JP 5527729 B2 JP5527729 B2 JP 5527729B2 JP 2010189132 A JP2010189132 A JP 2010189132A JP 2010189132 A JP2010189132 A JP 2010189132A JP 5527729 B2 JP5527729 B2 JP 5527729B2
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Japan
Prior art keywords
electrode
resistance state
memory element
nanogap
voltage
Prior art date
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Expired - Fee Related
Application number
JP2010189132A
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English (en)
Japanese (ja)
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JP2012048779A5 (enExample
JP2012048779A (ja
Inventor
剛 高橋
雄一郎 増田
成生 古田
透 角谷
雅敏 小野
豊 林
敏美 福岡
哲夫 清水
クマラグルバラン ソム
洋志 菅
泰久 内藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Funai Electric Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Funai Electric Advanced Applied Technology Research Institute Inc
Original Assignee
Funai Electric Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Funai Electric Advanced Applied Technology Research Institute Inc
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Filing date
Publication date
Application filed by Funai Electric Co Ltd, National Institute of Advanced Industrial Science and Technology AIST, Funai Electric Advanced Applied Technology Research Institute Inc filed Critical Funai Electric Co Ltd
Priority to JP2010189132A priority Critical patent/JP5527729B2/ja
Priority to PCT/JP2011/069113 priority patent/WO2012026506A1/ja
Priority to CN2011800413598A priority patent/CN103081016A/zh
Priority to US13/819,217 priority patent/US9135990B2/en
Priority to TW100130671A priority patent/TW201230036A/zh
Publication of JP2012048779A publication Critical patent/JP2012048779A/ja
Publication of JP2012048779A5 publication Critical patent/JP2012048779A5/ja
Application granted granted Critical
Publication of JP5527729B2 publication Critical patent/JP5527729B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Semiconductor Memories (AREA)
JP2010189132A 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置 Expired - Fee Related JP5527729B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010189132A JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置
PCT/JP2011/069113 WO2012026506A1 (ja) 2010-08-26 2011-08-25 メモリ素子の駆動方法及びメモリ素子を用いた記憶装置
CN2011800413598A CN103081016A (zh) 2010-08-26 2011-08-25 存储元件的驱动方法及使用存储元件的存储装置
US13/819,217 US9135990B2 (en) 2010-08-26 2011-08-25 Drive method for memory element, and storage device using memory element
TW100130671A TW201230036A (en) 2010-08-26 2011-08-26 Driving method of memory element, and storage device having memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010189132A JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置

Publications (3)

Publication Number Publication Date
JP2012048779A JP2012048779A (ja) 2012-03-08
JP2012048779A5 JP2012048779A5 (enExample) 2013-02-21
JP5527729B2 true JP5527729B2 (ja) 2014-06-25

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JP2010189132A Expired - Fee Related JP5527729B2 (ja) 2010-08-26 2010-08-26 メモリ素子の駆動方法及びメモリ素子を備える記憶装置

Country Status (5)

Country Link
US (1) US9135990B2 (enExample)
JP (1) JP5527729B2 (enExample)
CN (1) CN103081016A (enExample)
TW (1) TW201230036A (enExample)
WO (1) WO2012026506A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624837B (zh) * 2017-05-22 2018-05-21 旺宏電子股份有限公司 記憶體操作方法及記憶體操作裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7423787B2 (en) * 2001-03-01 2008-09-09 Ricoh Company, Ltd. Optical scanning module, device, and method, and imaging apparatus
US7443710B2 (en) 2004-09-28 2008-10-28 Spansion, Llc Control of memory devices possessing variable resistance characteristics
EP1895540A4 (en) * 2005-06-20 2008-07-09 Fujitsu Ltd NON-VOLATILE SEMICONDUCTOR MEMORY BLOCK AND WRITING PROCESS THEREFOR
JP4919146B2 (ja) 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
JPWO2007074504A1 (ja) 2005-12-26 2009-06-04 富士通株式会社 不揮発性半導体記憶装置及びその書き込み方法
WO2009034687A1 (ja) * 2007-09-10 2009-03-19 Panasonic Corporation 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法
JP5312782B2 (ja) * 2007-12-20 2013-10-09 株式会社船井電機新応用技術研究所 ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置
JP4544340B2 (ja) * 2008-01-24 2010-09-15 ソニー株式会社 電子素子およびその製造方法並びに記憶装置
JP5120883B2 (ja) * 2008-02-26 2013-01-16 株式会社船井電機新応用技術研究所 ナノギャップ素子の駆動方法及びナノギャップ素子を備える記憶装置
JP2010157568A (ja) 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
US8624217B2 (en) * 2010-06-25 2014-01-07 International Business Machines Corporation Planar phase-change memory cell with parallel electrical paths

Also Published As

Publication number Publication date
TW201230036A (en) 2012-07-16
JP2012048779A (ja) 2012-03-08
US20130155757A1 (en) 2013-06-20
CN103081016A (zh) 2013-05-01
WO2012026506A1 (ja) 2012-03-01
US9135990B2 (en) 2015-09-15

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