JP5520484B2 - ゲルマニウムまたはテルル含有量の少ないカルコゲナイドデバイス及びカルコゲナイド材料 - Google Patents

ゲルマニウムまたはテルル含有量の少ないカルコゲナイドデバイス及びカルコゲナイド材料 Download PDF

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JP5520484B2
JP5520484B2 JP2008545607A JP2008545607A JP5520484B2 JP 5520484 B2 JP5520484 B2 JP 5520484B2 JP 2008545607 A JP2008545607 A JP 2008545607A JP 2008545607 A JP2008545607 A JP 2008545607A JP 5520484 B2 JP5520484 B2 JP 5520484B2
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state
resistance
chalcogenide
chalcogenide material
reset
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JP2009524210A5 (zh
JP2009524210A (ja
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セルゲイ エイ． コスタイレヴ、
タイラー ロウレイ、
ガイ ウィッカー、
ウラジミール ズバティジ、
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オヴォニクス，インコーポレイテッド
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Priority claimed from US11/301,211 external-priority patent/US7525117B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

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JP2008545607A 2005-12-12 2006-11-16 ゲルマニウムまたはテルル含有量の少ないカルコゲナイドデバイス及びカルコゲナイド材料 Expired - Fee Related JP5520484B2 (ja)

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Application Number Priority Date Filing Date Title
US11/301,211 US7525117B2 (en) 2005-08-09 2005-12-12 Chalcogenide devices and materials having reduced germanium or telluruim content
US11/301,211 2005-12-12
PCT/US2006/044469 WO2007070218A2 (en) 2005-08-09 2006-11-16 Chalcogenide devices and materials having reduced germanium or telluruim content

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JP2009524210A JP2009524210A (ja) 2009-06-25
JP2009524210A5 JP2009524210A5 (zh) 2013-02-14
JP5520484B2 true JP5520484B2 (ja) 2014-06-11

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JP (1) JP5520484B2 (zh)
KR (2) KR101501980B1 (zh)
TW (1) TWI458147B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11004902B2 (en) 2016-06-14 2021-05-11 Sony Corporation Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element

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KR20120118060A (ko) 2006-11-02 2012-10-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
KR101177284B1 (ko) * 2007-01-18 2012-08-24 삼성전자주식회사 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법
KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
JP4929228B2 (ja) * 2008-01-23 2012-05-09 韓國電子通信研究院 相変化メモリー素子及びその製造方法
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US8891284B2 (en) * 2009-07-13 2014-11-18 Hewlett-Packard Development Company, L.P. Memristors based on mixed-metal-valence compounds
WO2011119175A1 (en) 2010-03-26 2011-09-29 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
WO2012138615A2 (en) * 2011-04-03 2012-10-11 Advanced Technology Materials, Inc. Oxic germanium-antimony-tellurium material and phase change memory comprising same
US8946666B2 (en) * 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US20140293676A1 (en) * 2013-03-03 2014-10-02 Adesto Technologies Corporation Programmable impedance memory elements and corresponding methods
US9564214B2 (en) * 2015-03-13 2017-02-07 Kabushiki Kaisha Toshiba Memory device
KR101889600B1 (ko) * 2016-03-31 2018-08-17 연세대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11004902B2 (en) 2016-06-14 2021-05-11 Sony Corporation Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element

Also Published As

Publication number Publication date
KR101501980B1 (ko) 2015-03-18
KR20080080273A (ko) 2008-09-03
TW200737557A (en) 2007-10-01
TWI458147B (zh) 2014-10-21
KR20130088175A (ko) 2013-08-07
KR101330769B1 (ko) 2013-11-18
JP2009524210A (ja) 2009-06-25

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