JP5520289B2 - 前方照明(frontlighting)を用いてディスプレイパネル上の欠陥の検出を向上させること - Google Patents
前方照明(frontlighting)を用いてディスプレイパネル上の欠陥の検出を向上させること Download PDFInfo
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- JP5520289B2 JP5520289B2 JP2011510678A JP2011510678A JP5520289B2 JP 5520289 B2 JP5520289 B2 JP 5520289B2 JP 2011510678 A JP2011510678 A JP 2011510678A JP 2011510678 A JP2011510678 A JP 2011510678A JP 5520289 B2 JP5520289 B2 JP 5520289B2
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- 230000007547 defect Effects 0.000 title claims description 151
- 238000001514 detection method Methods 0.000 title claims description 47
- 238000005286 illumination Methods 0.000 claims description 107
- 238000012360 testing method Methods 0.000 claims description 83
- 238000003384 imaging method Methods 0.000 claims description 73
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 60
- 230000003287 optical effect Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 23
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003796 beauty Effects 0.000 claims 2
- 230000009977 dual effect Effects 0.000 description 14
- 239000011521 glass Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Liquid Crystal (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5503108P | 2008-05-21 | 2008-05-21 | |
US61/055,031 | 2008-05-21 | ||
PCT/US2009/044667 WO2009143237A1 (en) | 2008-05-21 | 2009-05-20 | Enhancement of detection of defects on display panels using front lighting |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011521264A JP2011521264A (ja) | 2011-07-21 |
JP5520289B2 true JP5520289B2 (ja) | 2014-06-11 |
Family
ID=41340523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011510678A Active JP5520289B2 (ja) | 2008-05-21 | 2009-05-20 | 前方照明(frontlighting)を用いてディスプレイパネル上の欠陥の検出を向上させること |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5520289B2 (ko) |
KR (1) | KR101610821B1 (ko) |
CN (1) | CN102037371B (ko) |
TW (1) | TWI497060B (ko) |
WO (1) | WO2009143237A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109946589A (zh) * | 2019-04-08 | 2019-06-28 | 京东方科技集团股份有限公司 | 一种检测显示面板电学不良的方法及装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8866899B2 (en) * | 2011-06-07 | 2014-10-21 | Photon Dynamics Inc. | Systems and methods for defect detection using a whole raw image |
TWM467880U (zh) * | 2012-03-27 | 2013-12-11 | Photon Dynamics Inc | 用於對受測試電子器件進行電氣檢驗之裝置及包含電光調變器及調變器底座之電光調變器總成 |
KR101902500B1 (ko) * | 2012-04-16 | 2018-10-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 테스트 방법 |
CN103940832A (zh) * | 2013-01-17 | 2014-07-23 | 北京兆维电子(集团)有限责任公司 | 一种应用于平板显示屏自动光学检测的打光装置 |
KR101813784B1 (ko) | 2016-02-04 | 2017-12-29 | 연세대학교 산학협력단 | 데이터 신호의 진폭을 이용한 광 변조기의 바이어스 제어 장치 및 방법 |
CN106056608A (zh) * | 2016-06-01 | 2016-10-26 | 武汉精测电子技术股份有限公司 | 一种图像点线缺陷检测方法及装置 |
TWI717670B (zh) | 2018-12-21 | 2021-02-01 | 財團法人工業技術研究院 | 發光二極體的檢測方法及檢測裝置 |
TWI739376B (zh) * | 2019-12-13 | 2021-09-11 | 南臺學校財團法人南臺科技大學 | 光罩之保護膜的檢測方法及檢測系統 |
CN114930162A (zh) | 2020-02-27 | 2022-08-19 | 深圳帧观德芯科技有限公司 | 相位对比成像法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3683053D1 (de) * | 1986-10-23 | 1992-01-30 | Ibm | Verfahren zur kontaktfreien pruefung von platinen fuer integrierte schaltungen unter atmosphaerischen bedingungen. |
US5124635A (en) * | 1990-02-15 | 1992-06-23 | Photon Dynamics, Inc. | Voltage imaging system using electro-optics |
AU6942998A (en) * | 1997-03-31 | 1998-10-22 | Microtherm, Llc | Optical inspection module and method for detecting particles and defects on substrates in integrated process tools |
KR100243134B1 (ko) * | 1997-08-30 | 2000-02-01 | 윤종용 | 기록 재생용 광픽업 장치 |
JP4071331B2 (ja) * | 1997-12-12 | 2008-04-02 | フォトン・ダイナミクス・インコーポレーテッド | 液晶駆動基板の検査装置及びその検査方法 |
US6529018B1 (en) * | 1998-08-28 | 2003-03-04 | International Business Machines Corporation | Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light |
US20040076204A1 (en) * | 2002-10-16 | 2004-04-22 | Kruschwitz Brian E. | External cavity organic laser |
TW569479B (en) * | 2002-12-20 | 2004-01-01 | Ind Tech Res Inst | White-light LED applying omnidirectional reflector |
TWI281079B (en) * | 2004-01-12 | 2007-05-11 | Quanta Display Inc | Method for inspecting defects on a display panel |
TWI282852B (en) * | 2005-10-26 | 2007-06-21 | Chi Mei Optoelectronics Corp | Detecting system for sensing a defect of a panel |
TW200725015A (en) * | 2005-12-21 | 2007-07-01 | Chao-Chih Lai | LCD panel defect inspection system |
KR100788823B1 (ko) * | 2006-01-23 | 2007-12-27 | 한국원자력연구원 | 표면 결함 정보 추출을 위한 레이저-초음파 검사 장치 및방법 |
KR20070099398A (ko) * | 2006-04-03 | 2007-10-09 | 삼성전자주식회사 | 기판검사장치와 이를 이용한 기판검사방법 |
DE102006015714B4 (de) * | 2006-04-04 | 2019-09-05 | Applied Materials Gmbh | Lichtunterstütztes Testen eines optoelektronischen Moduls |
JP2007278928A (ja) * | 2006-04-10 | 2007-10-25 | Olympus Corp | 欠陥検査装置 |
-
2009
- 2009-05-20 KR KR1020107028192A patent/KR101610821B1/ko active IP Right Grant
- 2009-05-20 TW TW098116693A patent/TWI497060B/zh active
- 2009-05-20 WO PCT/US2009/044667 patent/WO2009143237A1/en active Application Filing
- 2009-05-20 JP JP2011510678A patent/JP5520289B2/ja active Active
- 2009-05-20 CN CN200980118535.6A patent/CN102037371B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109946589A (zh) * | 2019-04-08 | 2019-06-28 | 京东方科技集团股份有限公司 | 一种检测显示面板电学不良的方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
KR101610821B1 (ko) | 2016-04-20 |
KR20110015633A (ko) | 2011-02-16 |
TWI497060B (zh) | 2015-08-21 |
WO2009143237A1 (en) | 2009-11-26 |
TW201003063A (en) | 2010-01-16 |
CN102037371A (zh) | 2011-04-27 |
CN102037371B (zh) | 2015-11-25 |
JP2011521264A (ja) | 2011-07-21 |
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