JP5509393B1 - 薄膜サーミスタ素子およびその製造方法 - Google Patents
薄膜サーミスタ素子およびその製造方法 Download PDFInfo
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- JP5509393B1 JP5509393B1 JP2013547042A JP2013547042A JP5509393B1 JP 5509393 B1 JP5509393 B1 JP 5509393B1 JP 2013547042 A JP2013547042 A JP 2013547042A JP 2013547042 A JP2013547042 A JP 2013547042A JP 5509393 B1 JP5509393 B1 JP 5509393B1
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- electrodes
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- 239000010409 thin film Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 72
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 37
- 239000001301 oxygen Substances 0.000 claims abstract description 37
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 abstract description 46
- 238000010438 heat treatment Methods 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- 239000002131 composite material Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910018669 Mn—Co Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
子及び薄膜サーミスタ素子の製造方法に関する。
なっていることがわかる。
Claims (2)
- 基体と、
前記基体上に形成されたサーミスタ薄膜と、
前記サーミスタ薄膜の膜上、膜下又は膜中に形成された少なくとも一対の電極と、
を備えた薄膜サーミスタ素子であって、
前記一対の電極が、白金又は少なくとも白金を含む合金等からなる電極層と、を備え、前記電極層が、結晶状態が<111>配向のみであり、
前記電極層における酸素及び窒素の少なくとも一方の含有量が、0.01重量%以上、かつ4.9重量%以下であることを特徴とする薄膜サーミスタ素子。 - 請求項1に記載の薄膜サーミスタ素子において、
前記電極層の結晶が少なくとも粒状結晶を含んでいることを特徴とする薄膜サーミスタ素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013547042A JP5509393B1 (ja) | 2012-07-13 | 2013-07-09 | 薄膜サーミスタ素子およびその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012157278 | 2012-07-13 | ||
JP2012157278 | 2012-07-13 | ||
JP2013547042A JP5509393B1 (ja) | 2012-07-13 | 2013-07-09 | 薄膜サーミスタ素子およびその製造方法 |
PCT/JP2013/068749 WO2014010591A1 (ja) | 2012-07-13 | 2013-07-09 | 薄膜サーミスタ素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP5509393B1 true JP5509393B1 (ja) | 2014-06-04 |
JPWO2014010591A1 JPWO2014010591A1 (ja) | 2016-06-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013547042A Active JP5509393B1 (ja) | 2012-07-13 | 2013-07-09 | 薄膜サーミスタ素子およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9659691B2 (ja) |
JP (1) | JP5509393B1 (ja) |
KR (1) | KR101886400B1 (ja) |
CN (1) | CN103688320B (ja) |
DE (1) | DE112013003510T5 (ja) |
WO (1) | WO2014010591A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11088242B2 (en) | 2019-03-29 | 2021-08-10 | Flosfia Inc. | Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409420B (zh) * | 2014-10-11 | 2017-06-06 | 北京工业大学 | 一种GaAs功率器件、微波单片电路的片上Pt薄膜热敏电阻的制备工艺 |
DE102016101246A1 (de) | 2015-11-02 | 2017-05-04 | Epcos Ag | Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung |
WO2018207676A1 (ja) * | 2017-05-09 | 2018-11-15 | 株式会社Flosfia | サーミスタ膜およびその成膜方法 |
WO2019208616A1 (ja) * | 2018-04-27 | 2019-10-31 | 株式会社Flosfia | サーミスタ膜、サーミスタ膜を有するサーミスタ素子、およびサーミスタ膜の成膜方法 |
KR102007446B1 (ko) | 2018-05-21 | 2019-10-21 | 해성디에스 주식회사 | 센서 유닛, 이를 포함하는 온도 센서, 센서 유닛의 제조방법 및 이를 이용하여 제조된 온도 센서 |
JP7074209B2 (ja) * | 2018-12-28 | 2022-05-24 | 株式会社村田製作所 | 複合体ならびにそれを用いた構造体およびサーミスタ |
JP7375331B2 (ja) | 2019-04-26 | 2023-11-08 | セイコーエプソン株式会社 | 振動デバイスおよび電子機器 |
JP7434724B2 (ja) | 2019-05-23 | 2024-02-21 | セイコーエプソン株式会社 | 振動デバイス、電子機器および移動体 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH07201521A (ja) * | 1993-12-28 | 1995-08-04 | Ricoh Co Ltd | Pt薄膜およびその製膜方法 |
JP2003059704A (ja) * | 2001-06-04 | 2003-02-28 | Ngk Insulators Ltd | 感温性抵抗素子及びこれを用いた熱式流量センサ |
JP2007115938A (ja) * | 2005-10-21 | 2007-05-10 | Ishizuka Electronics Corp | 薄膜サーミスタ |
JP2008244344A (ja) * | 2007-03-28 | 2008-10-09 | Mitsubishi Materials Corp | 薄膜サーミスタ素子及び薄膜サーミスタ素子の製造方法 |
JP2008294288A (ja) * | 2007-05-25 | 2008-12-04 | Mitsubishi Materials Corp | 薄膜サーミスタ素子及びその製造方法 |
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JPS4811316B1 (ja) | 1970-09-25 | 1973-04-12 | ||
JPH0354841A (ja) | 1989-07-21 | 1991-03-08 | Fujitsu Ltd | BiCMOS半導体装置 |
JP3312752B2 (ja) | 1992-08-11 | 2002-08-12 | 石塚電子株式会社 | 薄膜サーミスタ |
CN1052299C (zh) * | 1995-05-11 | 2000-05-10 | 松下电器产业株式会社 | 温度传感元件和装有它的温度传感器及温度传感元件的制造方法 |
JP3520403B2 (ja) * | 1998-01-23 | 2004-04-19 | セイコーエプソン株式会社 | 圧電体薄膜素子、アクチュエータ、インクジェット式記録ヘッド、及びインクジェット式記録装置 |
JP2000164404A (ja) | 1998-11-27 | 2000-06-16 | Matsushita Electric Ind Co Ltd | 正特性サーミスタの製造方法 |
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JP5044902B2 (ja) * | 2005-08-01 | 2012-10-10 | 日立電線株式会社 | 圧電薄膜素子 |
JP5525143B2 (ja) * | 2008-06-05 | 2014-06-18 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
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-
2013
- 2013-07-09 DE DE112013003510.3T patent/DE112013003510T5/de active Pending
- 2013-07-09 WO PCT/JP2013/068749 patent/WO2014010591A1/ja active Application Filing
- 2013-07-09 US US14/111,932 patent/US9659691B2/en active Active
- 2013-07-09 CN CN201380001059.6A patent/CN103688320B/zh active Active
- 2013-07-09 JP JP2013547042A patent/JP5509393B1/ja active Active
- 2013-07-09 KR KR1020137025978A patent/KR101886400B1/ko active IP Right Grant
Patent Citations (5)
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JPH07201521A (ja) * | 1993-12-28 | 1995-08-04 | Ricoh Co Ltd | Pt薄膜およびその製膜方法 |
JP2003059704A (ja) * | 2001-06-04 | 2003-02-28 | Ngk Insulators Ltd | 感温性抵抗素子及びこれを用いた熱式流量センサ |
JP2007115938A (ja) * | 2005-10-21 | 2007-05-10 | Ishizuka Electronics Corp | 薄膜サーミスタ |
JP2008244344A (ja) * | 2007-03-28 | 2008-10-09 | Mitsubishi Materials Corp | 薄膜サーミスタ素子及び薄膜サーミスタ素子の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11088242B2 (en) | 2019-03-29 | 2021-08-10 | Flosfia Inc. | Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device |
Also Published As
Publication number | Publication date |
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KR101886400B1 (ko) | 2018-08-08 |
CN103688320B (zh) | 2018-04-03 |
US20150170805A1 (en) | 2015-06-18 |
KR20150035348A (ko) | 2015-04-06 |
JPWO2014010591A1 (ja) | 2016-06-23 |
CN103688320A (zh) | 2014-03-26 |
DE112013003510T5 (de) | 2015-04-30 |
WO2014010591A1 (ja) | 2014-01-16 |
US9659691B2 (en) | 2017-05-23 |
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