JP5503145B2 - 四面体炭素層および軟質外層を備える層状構造によって被覆された基板 - Google Patents
四面体炭素層および軟質外層を備える層状構造によって被覆された基板 Download PDFInfo
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- 229910052799 carbon Inorganic materials 0.000 title claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 title claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 16
- 230000001737 promoting effect Effects 0.000 claims description 15
- 150000001721 carbon Chemical class 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 11
- 229910021478 group 5 element Inorganic materials 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 10
- 229910021476 group 6 element Inorganic materials 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910021480 group 4 element Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000002114 nanocomposite Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
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- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/347—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with layers adapted for cutting tools or wear applications
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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- Y10T428/2495—Thickness [relative or absolute]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Description
四面体炭素層は、200GPaよりも高いヤング率を有する。好ましくは、ヤング率は、200GPaから800GPaの範囲内にある。さらに好ましくは、四面体炭素層は、少なくとも300GPa、例えば、400GPa、500GPa、または600GPaのヤング率を有する。
非晶質炭素層は、200GPaよりも低いヤング率を有する。
基板は、柔軟性または剛性のいずれかを有するどのような金属基板を含んでもよい。基板の例として、鋼基板、硬質金属基板、アルミニウム基板またはアルミニウム合金基板、チタン基板またはチタン合金基板、および銅基板または銅合金基板が挙げられる。
本発明の実施形態によれば、層状構造は、付着促進層を備えてもよい。この付着促進層は、中間層の堆積の前に、金属基板に堆積される。
本発明の他の実施形態によれば、層状構造は、上層をさらに備えてもよい。この上層は、非晶質炭素層に堆積される。
−四面体炭素皮膜によって被覆された金属基板を設けるステップと、
−前記四面体炭素皮膜の上に非晶質炭素層を施すステップであって、前記非晶質炭素層は、四面体炭素層の硬度よりも低い硬度を有するステップと、
を含むことを特徴とする。
−金属基板10に堆積された中間層14であって、四面体炭素層を含む中間層14と、
−中間層14に堆積された非晶質炭素層16であって、水素化非晶質炭素(a−C:H)層を含む非晶質炭素層16と、
を備えている。
−金属基板に堆積された付着促進層23であって、例えば、クロム層またはクロム基層またはチタン層またはチタン基層を含む付着促進層23と、
−付着促進層23に堆積された中間層24であって、四面体炭素層を含む中間層24と、
−中間層24に堆積された非晶質炭素層26であって、水素化非晶質炭素(a−C:H)層を含む非晶質炭素層26と、
を備えている。
11 金属基板
12 層状構造
14 中間層
16 非晶質炭素層
20 被覆金属基板
21 金属基板
22 層状構造
23 付着促進層
24 中間層
26 非晶質炭素層
27 上層
30 被覆金属基板
31 金属基板
32 層状構造
33 繰返し単位
34 中間層
36 非晶質炭素層
37 上層
Claims (15)
- 層状構造によって少なくとも部分的に被覆された金属基板であって、前記層状構造が、前記基板に堆積された中間層と、前記中間層に堆積された非晶質炭素層とを備え、前記非晶質炭素層が200GPaよりも低いヤング率を有し、前記中間層が200GPaよりも高いヤング率を有する四面体炭素層を含み、
前記四面体炭素層が、1μmよりも大きい厚みを有し、水素化四面体炭素(ta−C:H)であり、
前記水素化四面体炭素の水素濃度は、20原子%よりも小さく、
前記非晶質炭素層が、SiおよびOをさらに含む非晶質水素化炭素(a−C:H)であり、
前記四面体炭素のsp3結合炭素の比率が50%から90%の範囲内であり、
前記非晶質水素化炭素(a−C:H)層が40%よりも低い比率のsp3結合炭素を有し、
前記非晶質水素化炭素層の水素含量が20%から30%の範囲内である
ことを特徴とする金属基板。 - 前記層状構造が、多数の繰返し単位を備え、各繰返し単位が、200GPaよりも高いヤング率を有する少なくとも1つの四面体炭素層を含む中間層と、200GPaよりも低いヤング率を有する非晶質炭素層とを備え、前記繰返し単位の数が、2から100の範囲内にあることを特徴とする請求項1に記載の基板。
- 前記四面体炭素層が、200GPaから800GPaの範囲内にあるヤング率を有することを特徴とする請求項1あるいは2に記載の基板。
- 前記四面体炭素層が、20GPaよりも高い硬度を有することを特徴とする請求項1〜3のいずれかに記載の基板。
- 前記四面体炭素層に、少なくとも一種の金属がドープされることを特徴とする請求項1〜4のいずれかに記載の基板。
- SiおよびOをさらに含む前記非晶質炭素層が、2つの相互貫入ネットワーク、具体的には、水素によって安定化されたダイヤモンド状炭素ネットワーク内の主にsp3結合炭素からなる第1のネットワークおよび酸素によって安定化された珪素からなる第2のネットワークを含むことを特徴とする請求項1〜5のいずれかに記載の基板。
- 前記非晶質炭素層に、少なくとも一種の金属がドープされることを特徴とする請求項1〜6のいずれかに記載の基板。
- 前記層状構造が、前記中間層の堆積の前に前記基板に堆積された付着促進層を備えることを特徴とする請求項1〜7のいずれかに記載の基板。
- 前記付着促進層が、少なくとも1つの層を備え、前記少なくとも1つの層が、珪素、および周期表の第4族元素、第5族元素および第6族元素からなる群の少なくとも1つの元素を含むことを特徴とする請求項8に記載の基板。
- 前記中間層が、少なくとも1つの金属層を含み、前記金属層が、珪素、および周期表の第4族元素、第5族元素および第6族元素からなる群の少なくとも1つの元素を含むことを特徴とする請求項8あるいは9に記載の基板。
- 前記中間層が、珪素、および周期表の第4族元素、第5族元素および第6族元素からなる群の少なくとも1つの元素の炭化物、窒化物、炭窒化物、酸化炭化物、酸化窒化物、および酸化炭窒化物からなる群から選択される少なくとも1つの層を含むことを特徴とする請求項8あるいは9に記載の基板。
- 前記中間層が、珪素、および周期表の第4族元素、第5族元素および第6族元素からなる群から選択される金属の少なくとも1つの金属層と、珪素、および周期表の第4族元素、第5族元素および第6族元素からなる群から選択される金属の炭化物、窒化物、炭窒化物、酸化炭化物、酸化窒化物、および酸化炭窒化物の少なくとも1つの層と、の組合せを含むことを特徴とする請求項8〜11のいずれかに記載の基板。
- 前記層状構造が、上層をさらに備え、前記上層が、前記非晶質炭素層に堆積されることを特徴とする請求項1〜12のいずれかに記載の基板。
- 四面体炭素皮膜によって被覆された金属基板による被接触体の磨耗を低減させる方法であって、
1μmより大きい厚みを有し、水素濃度が20原子%よりも小さい水素化四面体炭素(ta−C:H)である四面体炭素皮膜によって被覆された金属基板を設けるステップと、
前記四面体炭素皮膜の上に、SiおよびOをさらに含む非晶質水素化炭素(a−C:H)を施すステップであって、前記非晶質水素化炭素層が前記四面体炭素層の硬度よりも低い硬度を有するステップと、
を含み、
前記四面体炭素のsp3結合炭素の比率が50%から90%の範囲内であり、
前記非晶質水素化炭素(a−C:H)層が40%よりも低い比率のsp3結合炭素を有し、
前記非晶質水素化炭素層の水素含量が20%から30%の範囲内であることを特徴とする方法。 - 前記非晶質水素化炭素層の硬度が、四面体炭素層の硬度と等しいかまたは近い硬度から前記四面体炭素層よりも低い硬度まで徐々に変化することを特徴とする請求項14に記載の方法。
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