JP5498659B2 - レーザ照射位置安定性評価方法及びレーザ照射装置 - Google Patents

レーザ照射位置安定性評価方法及びレーザ照射装置 Download PDF

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Publication number
JP5498659B2
JP5498659B2 JP2008027735A JP2008027735A JP5498659B2 JP 5498659 B2 JP5498659 B2 JP 5498659B2 JP 2008027735 A JP2008027735 A JP 2008027735A JP 2008027735 A JP2008027735 A JP 2008027735A JP 5498659 B2 JP5498659 B2 JP 5498659B2
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Prior art keywords
laser
pulse laser
laser irradiation
irradiation
irradiation position
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Expired - Fee Related
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JP2008027735A
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English (en)
Japanese (ja)
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JP2009188251A5 (enExample
JP2009188251A (ja
Inventor
隆介 川上
みゆき 正木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008027735A priority Critical patent/JP5498659B2/ja
Priority to US12/361,284 priority patent/US8045184B2/en
Publication of JP2009188251A publication Critical patent/JP2009188251A/ja
Publication of JP2009188251A5 publication Critical patent/JP2009188251A5/ja
Priority to US13/279,559 priority patent/US8144341B2/en
Priority to US13/428,297 priority patent/US8339613B2/en
Application granted granted Critical
Publication of JP5498659B2 publication Critical patent/JP5498659B2/ja
Expired - Fee Related legal-status Critical Current
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2008027735A 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置 Expired - Fee Related JP5498659B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008027735A JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置
US12/361,284 US8045184B2 (en) 2008-02-07 2009-01-28 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof
US13/279,559 US8144341B2 (en) 2008-02-07 2011-10-24 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof
US13/428,297 US8339613B2 (en) 2008-02-07 2012-03-23 Making method of sample for evaluation of laser irradiation position and making apparatus thereof and evaluation method of stability of laser irradiation position and evaluation apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027735A JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置

Publications (3)

Publication Number Publication Date
JP2009188251A JP2009188251A (ja) 2009-08-20
JP2009188251A5 JP2009188251A5 (enExample) 2011-03-10
JP5498659B2 true JP5498659B2 (ja) 2014-05-21

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JP2008027735A Expired - Fee Related JP5498659B2 (ja) 2008-02-07 2008-02-07 レーザ照射位置安定性評価方法及びレーザ照射装置

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US (3) US8045184B2 (enExample)
JP (1) JP5498659B2 (enExample)

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Publication number Priority date Publication date Assignee Title
JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9255915B2 (en) 2012-05-11 2016-02-09 Siemens Energy, Inc. Evaluating a process effect of surface presentation angle
US9437041B2 (en) 2012-10-30 2016-09-06 The Penn State Research Foundation 3D laser ablation tomography
US9835532B2 (en) * 2012-10-30 2017-12-05 The Penn State Research Foundation 3D laser ablation tomography and spectrographic analysis
WO2015100716A1 (zh) * 2014-01-02 2015-07-09 清华大学 一种评价激光器稳定性的方法
KR20170037633A (ko) * 2014-07-21 2017-04-04 어플라이드 머티어리얼스, 인코포레이티드 스캐닝형 펄스 어닐링 장치 및 방법
DE102014013160B4 (de) * 2014-09-11 2018-01-11 ProASSORT GmbH Verfahren und Vorrichtung zur Sortierung von wiederverwertbaren Rohstoffstücken
CN105471064A (zh) * 2016-02-01 2016-04-06 李良杰 运动发电机
US11909091B2 (en) 2020-05-19 2024-02-20 Kymeta Corporation Expansion compensation structure for an antenna

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US4689491A (en) * 1985-04-19 1987-08-25 Datasonics Corp. Semiconductor wafer scanning system
US5091963A (en) 1988-05-02 1992-02-25 The Standard Oil Company Method and apparatus for inspecting surfaces for contrast variations
JPH02260419A (ja) * 1989-03-30 1990-10-23 Matsushita Electric Ind Co Ltd レーザ照射方法
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3343492B2 (ja) * 1997-04-02 2002-11-11 シャープ株式会社 薄膜半導体装置の製造方法
JP3679558B2 (ja) 1997-07-31 2005-08-03 アルプス電気株式会社 境界線の検出方法およびこの検出方法を用いた磁気ヘッドの位置決め方法および位置決め装置
JP2000031229A (ja) 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP4016504B2 (ja) 1998-10-05 2007-12-05 セイコーエプソン株式会社 半導体膜の製造方法及びアニール装置
JP2001023918A (ja) 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
JP4556266B2 (ja) 2000-01-07 2010-10-06 ソニー株式会社 ポリシリコン評価方法、ポリシリコン検査装置、薄膜トランジスタ製造方法、及び、アニール処理装置
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JP2002158186A (ja) 2000-11-21 2002-05-31 Toshiba Corp レーザアニール方法およびその装置
JP4586266B2 (ja) * 2000-12-18 2010-11-24 ソニー株式会社 薄膜トランジスタ製造システム及び物体表面の評価装置
SG103865A1 (en) 2001-06-01 2004-05-26 Toshiba Kk Film quality inspecting method and film quality inspecting apparatus
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JP5498659B2 (ja) * 2008-02-07 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射位置安定性評価方法及びレーザ照射装置

Also Published As

Publication number Publication date
US8144341B2 (en) 2012-03-27
US20120184055A1 (en) 2012-07-19
US8045184B2 (en) 2011-10-25
US20090219548A1 (en) 2009-09-03
US8339613B2 (en) 2012-12-25
JP2009188251A (ja) 2009-08-20
US20120033234A1 (en) 2012-02-09

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