JP5484666B2 - マスクエッチングプロセス - Google Patents

マスクエッチングプロセス Download PDF

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Publication number
JP5484666B2
JP5484666B2 JP2007280804A JP2007280804A JP5484666B2 JP 5484666 B2 JP5484666 B2 JP 5484666B2 JP 2007280804 A JP2007280804 A JP 2007280804A JP 2007280804 A JP2007280804 A JP 2007280804A JP 5484666 B2 JP5484666 B2 JP 5484666B2
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JP
Japan
Prior art keywords
gas
etching
processing chamber
processing
reticle
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Expired - Fee Related
Application number
JP2007280804A
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English (en)
Japanese (ja)
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JP2008116949A (ja
JP2008116949A5 (https=
Inventor
アール チャンドラチュッド マドハビ
サバハルワル アミタブフ
ユエ ベッキー レウング トイ
グリムバーゲン マイケル
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of JP2008116949A5 publication Critical patent/JP2008116949A5/ja
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Publication of JP5484666B2 publication Critical patent/JP5484666B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2007280804A 2006-10-30 2007-10-29 マスクエッチングプロセス Expired - Fee Related JP5484666B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86347406P 2006-10-30 2006-10-30
US60/863,474 2006-10-30

Publications (3)

Publication Number Publication Date
JP2008116949A JP2008116949A (ja) 2008-05-22
JP2008116949A5 JP2008116949A5 (https=) 2010-12-16
JP5484666B2 true JP5484666B2 (ja) 2014-05-07

Family

ID=39052422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007280804A Expired - Fee Related JP5484666B2 (ja) 2006-10-30 2007-10-29 マスクエッチングプロセス

Country Status (6)

Country Link
US (1) US20080179282A1 (https=)
EP (1) EP1918775A3 (https=)
JP (1) JP5484666B2 (https=)
KR (2) KR100944846B1 (https=)
CN (1) CN101174081A (https=)
TW (1) TWI410744B (https=)

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CN103837938A (zh) * 2012-11-20 2014-06-04 上海华虹宏力半导体制造有限公司 光纤对准器件及其制造方法
CN103730720B (zh) * 2013-12-20 2016-04-13 上海安费诺永亿通讯电子有限公司 一种在有遮挡结构的天线载体表面制作天线线路的方法
CN108132579B (zh) * 2016-12-01 2020-09-25 清华大学 光刻掩模板
WO2019016224A1 (en) * 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK
KR102733170B1 (ko) 2018-09-21 2024-11-21 램 리써치 코포레이션 금속-산화물 에칭 및 챔버 컴포넌트들 보호
CN118380315A (zh) * 2018-10-29 2024-07-23 中微半导体设备(上海)股份有限公司 一种图形的修剪方法及等离子体处理装置
CN109557761B (zh) * 2018-12-07 2022-03-08 深圳市华星光电半导体显示技术有限公司 掩膜板制作方法
CN115039209A (zh) * 2019-12-31 2022-09-09 玛特森技术公司 用于硬掩模去除的系统和方法
US20220193828A1 (en) * 2020-12-23 2022-06-23 Amulaire Thermal Technology, Inc. Lift-off structure for sprayed thin layer on substrate surface and method for the same
US11915932B2 (en) * 2021-04-28 2024-02-27 Applied Materials, Inc. Plasma etching of mask materials
CN113517188B (zh) * 2021-06-29 2024-04-26 上海华力集成电路制造有限公司 采用多层掩模板的图形化工艺方法
CN118818889A (zh) * 2024-06-28 2024-10-22 长春理工大学 一种基于光电混合卷积神经网络的掩膜版制备方法

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Also Published As

Publication number Publication date
KR101333744B1 (ko) 2013-11-27
EP1918775A3 (en) 2012-06-06
EP1918775A2 (en) 2008-05-07
JP2008116949A (ja) 2008-05-22
CN101174081A (zh) 2008-05-07
TW200819908A (en) 2008-05-01
KR20080039205A (ko) 2008-05-07
KR100944846B1 (ko) 2010-03-04
US20080179282A1 (en) 2008-07-31
KR20090077736A (ko) 2009-07-15
TWI410744B (zh) 2013-10-01

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