TWI410744B - 用於處理光微影倍縮光罩的方法 - Google Patents

用於處理光微影倍縮光罩的方法 Download PDF

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Publication number
TWI410744B
TWI410744B TW096139932A TW96139932A TWI410744B TW I410744 B TWI410744 B TW I410744B TW 096139932 A TW096139932 A TW 096139932A TW 96139932 A TW96139932 A TW 96139932A TW I410744 B TWI410744 B TW I410744B
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TW
Taiwan
Prior art keywords
gas
processing chamber
processing
reticle
sccm
Prior art date
Application number
TW096139932A
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English (en)
Chinese (zh)
Other versions
TW200819908A (en
Inventor
仙卓須德麥哈維Ｒ
沙巴瓦愛米塔
梁佟岳貝奇
格林柏恩麥克
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW200819908A publication Critical patent/TW200819908A/zh
Application granted granted Critical
Publication of TWI410744B publication Critical patent/TWI410744B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW096139932A 2006-10-30 2007-10-24 用於處理光微影倍縮光罩的方法 TWI410744B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86347406P 2006-10-30 2006-10-30

Publications (2)

Publication Number Publication Date
TW200819908A TW200819908A (en) 2008-05-01
TWI410744B true TWI410744B (zh) 2013-10-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096139932A TWI410744B (zh) 2006-10-30 2007-10-24 用於處理光微影倍縮光罩的方法

Country Status (6)

Country Link
US (1) US20080179282A1 (https=)
EP (1) EP1918775A3 (https=)
JP (1) JP5484666B2 (https=)
KR (2) KR100944846B1 (https=)
CN (1) CN101174081A (https=)
TW (1) TWI410744B (https=)

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WO2010141257A2 (en) * 2009-06-03 2010-12-09 Applied Materials, Inc. Method and apparatus for etching
CN103837938A (zh) * 2012-11-20 2014-06-04 上海华虹宏力半导体制造有限公司 光纤对准器件及其制造方法
CN103730720B (zh) * 2013-12-20 2016-04-13 上海安费诺永亿通讯电子有限公司 一种在有遮挡结构的天线载体表面制作天线线路的方法
CN108132579B (zh) * 2016-12-01 2020-09-25 清华大学 光刻掩模板
WO2019016224A1 (en) * 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK
KR102733170B1 (ko) 2018-09-21 2024-11-21 램 리써치 코포레이션 금속-산화물 에칭 및 챔버 컴포넌트들 보호
CN118380315A (zh) * 2018-10-29 2024-07-23 中微半导体设备(上海)股份有限公司 一种图形的修剪方法及等离子体处理装置
CN109557761B (zh) * 2018-12-07 2022-03-08 深圳市华星光电半导体显示技术有限公司 掩膜板制作方法
CN115039209A (zh) * 2019-12-31 2022-09-09 玛特森技术公司 用于硬掩模去除的系统和方法
US20220193828A1 (en) * 2020-12-23 2022-06-23 Amulaire Thermal Technology, Inc. Lift-off structure for sprayed thin layer on substrate surface and method for the same
US11915932B2 (en) * 2021-04-28 2024-02-27 Applied Materials, Inc. Plasma etching of mask materials
CN113517188B (zh) * 2021-06-29 2024-04-26 上海华力集成电路制造有限公司 采用多层掩模板的图形化工艺方法
CN118818889A (zh) * 2024-06-28 2024-10-22 长春理工大学 一种基于光电混合卷积神经网络的掩膜版制备方法

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Also Published As

Publication number Publication date
KR101333744B1 (ko) 2013-11-27
EP1918775A3 (en) 2012-06-06
EP1918775A2 (en) 2008-05-07
JP2008116949A (ja) 2008-05-22
JP5484666B2 (ja) 2014-05-07
CN101174081A (zh) 2008-05-07
TW200819908A (en) 2008-05-01
KR20080039205A (ko) 2008-05-07
KR100944846B1 (ko) 2010-03-04
US20080179282A1 (en) 2008-07-31
KR20090077736A (ko) 2009-07-15

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