JP5481104B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5481104B2
JP5481104B2 JP2009140454A JP2009140454A JP5481104B2 JP 5481104 B2 JP5481104 B2 JP 5481104B2 JP 2009140454 A JP2009140454 A JP 2009140454A JP 2009140454 A JP2009140454 A JP 2009140454A JP 5481104 B2 JP5481104 B2 JP 5481104B2
Authority
JP
Japan
Prior art keywords
lead
semiconductor device
semiconductor
semiconductor package
induction conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009140454A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010287737A5 (enExample
JP2010287737A (ja
Inventor
健太郎 越智
彰 三島
拓朗 金澤
哲郎 飯島
勝男 石坂
則夫 城戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009140454A priority Critical patent/JP5481104B2/ja
Priority to US12/797,317 priority patent/US7872348B2/en
Priority to US12/968,534 priority patent/US8035222B2/en
Publication of JP2010287737A publication Critical patent/JP2010287737A/ja
Priority to US13/244,133 priority patent/US8466549B2/en
Publication of JP2010287737A5 publication Critical patent/JP2010287737A5/ja
Application granted granted Critical
Publication of JP5481104B2 publication Critical patent/JP5481104B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/115—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
JP2009140454A 2009-06-11 2009-06-11 半導体装置 Expired - Fee Related JP5481104B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009140454A JP5481104B2 (ja) 2009-06-11 2009-06-11 半導体装置
US12/797,317 US7872348B2 (en) 2009-06-11 2010-06-09 Semiconductor device
US12/968,534 US8035222B2 (en) 2009-06-11 2010-12-15 Semiconductor device
US13/244,133 US8466549B2 (en) 2009-06-11 2011-09-23 Semiconductor device for power conversion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009140454A JP5481104B2 (ja) 2009-06-11 2009-06-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2010287737A JP2010287737A (ja) 2010-12-24
JP2010287737A5 JP2010287737A5 (enExample) 2012-05-31
JP5481104B2 true JP5481104B2 (ja) 2014-04-23

Family

ID=43306262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009140454A Expired - Fee Related JP5481104B2 (ja) 2009-06-11 2009-06-11 半導体装置

Country Status (2)

Country Link
US (3) US7872348B2 (enExample)
JP (1) JP5481104B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5488638B2 (ja) 2012-04-11 2014-05-14 株式会社デンソー 電力変換装置
DE112012006842B4 (de) 2012-08-24 2022-06-09 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6186183B2 (ja) * 2013-06-13 2017-08-23 株式会社日立製作所 電力変換装置
US20170133316A1 (en) * 2015-09-25 2017-05-11 Tesla Motors, Inc. Semiconductor device with stacked terminals
CN107546214B (zh) * 2016-06-23 2020-02-07 台达电子工业股份有限公司 功率模块封装结构
JP2019134080A (ja) * 2018-01-31 2019-08-08 株式会社デンソー 半導体モジュール
WO2020144907A1 (ja) * 2019-01-08 2020-07-16 トヨタ自動車株式会社 半導体装置
WO2021220357A1 (ja) 2020-04-27 2021-11-04 三菱電機株式会社 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3366192B2 (ja) 1995-09-08 2003-01-14 株式会社日立製作所 配線基板及びそれを用いた電力変換装置
WO2001082376A1 (fr) * 2000-04-25 2001-11-01 Kabushiki Kaisha Toyota Jidoshokki Dispositif a semi-conducteur
JP2002246515A (ja) * 2001-02-20 2002-08-30 Mitsubishi Electric Corp 半導体装置
JP4610106B2 (ja) * 2001-02-28 2011-01-12 スリーエム イノベイティブ プロパティズ カンパニー 熱伝導性シートの製造方法及び製造装置
US7045890B2 (en) * 2001-09-28 2006-05-16 Intel Corporation Heat spreader and stiffener having a stiffener extension
JP3668708B2 (ja) * 2001-10-22 2005-07-06 株式会社日立製作所 故障検知システム
JP2003168769A (ja) * 2001-11-30 2003-06-13 Mitsubishi Electric Corp 電力用半導体装置
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
JP2004241734A (ja) * 2003-02-10 2004-08-26 Toyota Industries Corp 半導体モジュール
JP3941728B2 (ja) * 2003-04-07 2007-07-04 富士電機ホールディングス株式会社 電力用半導体装置
JP4096831B2 (ja) * 2003-07-09 2008-06-04 日産自動車株式会社 半導体装置の実装構造
EP1657750B1 (en) * 2003-08-18 2018-12-05 Sanken Electric Co., Ltd. Semiconductor device
US7034394B2 (en) * 2003-10-08 2006-04-25 Intel Corporation Microelectronic assembly having thermoelectric elements to cool a die and a method of making the same
JP4244318B2 (ja) * 2003-12-03 2009-03-25 株式会社ルネサステクノロジ 半導体装置
US7173823B1 (en) * 2004-12-18 2007-02-06 Rinehart Motion Systems, Llc Fluid cooled electrical assembly
US7569927B2 (en) * 2005-09-21 2009-08-04 Microsemi Corporation RF power transistor package
WO2008142760A1 (ja) * 2007-05-18 2008-11-27 Sansha Electric Manufacturing Co., Ltd. 電力用半導体モジュール
US7705447B2 (en) * 2008-09-29 2010-04-27 Intel Corporation Input/output package architectures, and methods of using same
JP2010092977A (ja) * 2008-10-06 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US8202765B2 (en) * 2009-01-22 2012-06-19 International Business Machines Corporation Achieving mechanical and thermal stability in a multi-chip package

Also Published As

Publication number Publication date
US8035222B2 (en) 2011-10-11
US20100315786A1 (en) 2010-12-16
US7872348B2 (en) 2011-01-18
US8466549B2 (en) 2013-06-18
JP2010287737A (ja) 2010-12-24
US20120012978A1 (en) 2012-01-19
US20110084359A1 (en) 2011-04-14

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