JP5473266B2 - インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法 - Google Patents

インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法 Download PDF

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JP5473266B2
JP5473266B2 JP2008182297A JP2008182297A JP5473266B2 JP 5473266 B2 JP5473266 B2 JP 5473266B2 JP 2008182297 A JP2008182297 A JP 2008182297A JP 2008182297 A JP2008182297 A JP 2008182297A JP 5473266 B2 JP5473266 B2 JP 5473266B2
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Japan
Prior art keywords
pattern
processing
region
forming
resin
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Expired - Fee Related
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JP2008182297A
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English (en)
Japanese (ja)
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JP2009060084A (ja
JP2009060084A5 (enExample
Inventor
真吾 奥島
淳一 関
治人 小野
敦則 寺崎
七朗 中辻
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Canon Inc
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Canon Inc
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Priority to JP2008182297A priority Critical patent/JP5473266B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN2008801009858A priority patent/CN101765809B/zh
Priority to US12/282,454 priority patent/US8361336B2/en
Priority to PCT/JP2008/064265 priority patent/WO2009020196A1/en
Priority to KR1020107003787A priority patent/KR101155200B1/ko
Priority to EP08792322A priority patent/EP2176709B1/en
Publication of JP2009060084A publication Critical patent/JP2009060084A/ja
Publication of JP2009060084A5 publication Critical patent/JP2009060084A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008182297A 2007-08-03 2008-07-14 インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法 Expired - Fee Related JP5473266B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008182297A JP5473266B2 (ja) 2007-08-03 2008-07-14 インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法
US12/282,454 US8361336B2 (en) 2007-08-03 2008-08-01 Imprint method for imprinting a pattern of a mold onto a resin material of a substrate and related substrate processing method
PCT/JP2008/064265 WO2009020196A1 (en) 2007-08-03 2008-08-01 Imprint method and processing method of substrate using the imprint method
KR1020107003787A KR101155200B1 (ko) 2007-08-03 2008-08-01 임프린트 방법 및 임프린트 방법을 사용하는 기판의 가공 방법
CN2008801009858A CN101765809B (zh) 2007-08-03 2008-08-01 压印方法和使用压印方法的基板的处理方法
EP08792322A EP2176709B1 (en) 2007-08-03 2008-08-01 Imprint method and processing method of substrate using the imprint method

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007203050 2007-08-03
JP2007203044 2007-08-03
JP2007203050 2007-08-03
JP2007203044 2007-08-03
JP2008182297A JP5473266B2 (ja) 2007-08-03 2008-07-14 インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2009060084A JP2009060084A (ja) 2009-03-19
JP2009060084A5 JP2009060084A5 (enExample) 2011-08-11
JP5473266B2 true JP5473266B2 (ja) 2014-04-16

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JP2008182297A Expired - Fee Related JP5473266B2 (ja) 2007-08-03 2008-07-14 インプリント方法および基板の加工方法、基板の加工方法による半導体デバイスの製造方法

Country Status (6)

Country Link
US (1) US8361336B2 (enExample)
EP (1) EP2176709B1 (enExample)
JP (1) JP5473266B2 (enExample)
KR (1) KR101155200B1 (enExample)
CN (1) CN101765809B (enExample)
WO (1) WO2009020196A1 (enExample)

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JP5258635B2 (ja) * 2008-03-18 2013-08-07 キヤノン株式会社 ナノインプリント方法、ナノインプリントに用いられるモールド及び構造体の製造方法
GB2468635B (en) * 2009-02-05 2014-05-14 Api Group Plc Production of a surface relief on a substrate
US20110031650A1 (en) * 2009-08-04 2011-02-10 Molecular Imprints, Inc. Adjacent Field Alignment
DK2463073T3 (en) * 2009-08-07 2018-05-22 Soken Kagaku Kk RESINFORM FOR PRINTING AND PROCEDURE FOR PREPARING SAME
JP4963718B2 (ja) * 2009-10-23 2012-06-27 キヤノン株式会社 インプリント方法及びインプリント装置、それを用いた物品の製造方法
JP5546893B2 (ja) 2010-02-16 2014-07-09 東京エレクトロン株式会社 インプリント方法
JP5850717B2 (ja) * 2010-12-02 2016-02-03 キヤノン株式会社 インプリント装置、及びそれを用いた物品の製造方法
JP5558327B2 (ja) 2010-12-10 2014-07-23 株式会社東芝 パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法
JP5863286B2 (ja) * 2011-06-16 2016-02-16 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP6056294B2 (ja) * 2011-09-28 2017-01-11 大日本印刷株式会社 パターンの形成方法
TWI570771B (zh) 2011-12-19 2017-02-11 分子壓模公司 使用步進及重複工具之用於壓印微影術之無接縫大區域主模板之製造技術
WO2014145036A1 (en) * 2013-03-15 2014-09-18 The Trustees Of Princeton University Rapid and sensitive analyte measurement assay
JP2015028978A (ja) * 2013-07-30 2015-02-12 大日本印刷株式会社 異物検出方法、インプリント方法及びインプリントシステム
WO2016065308A1 (en) * 2014-10-23 2016-04-28 Board Of Regents, The University Of Texas System Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
DE102015118991A1 (de) * 2015-11-05 2017-05-11 Ev Group E. Thallner Gmbh Verfahren zur Behandlung von Millimeter- und/oder Mikrometer- und/oder Nanometerstrukturen an einer Oberfläche eines Substrats
JP6655988B2 (ja) * 2015-12-25 2020-03-04 キヤノン株式会社 インプリント装置の調整方法、インプリント方法および物品製造方法
KR102535820B1 (ko) 2016-05-19 2023-05-24 삼성디스플레이 주식회사 임프린트 리소그래피 방법, 임프린트용 마스터 템플릿, 이를 이용하여 제조된 와이어 그리드 편광소자 및 이를 포함하는 표시 기판
KR20180009825A (ko) * 2016-07-19 2018-01-30 삼성디스플레이 주식회사 롤 타입 임프린트 마스터 몰드, 이의 제조 방법 및 이를 이용한 임프린트 방법
MY193101A (en) * 2016-09-27 2022-09-26 Illumina Inc Imprinted substrates
KR20180039228A (ko) 2016-10-07 2018-04-18 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102256347B1 (ko) * 2017-03-08 2021-05-27 캐논 가부시끼가이샤 패턴 형성 방법, 및 가공 기판, 광학 부품 및 석영 몰드 레플리카의 제조 방법, 및 임프린트 전처리 코팅 재료 및 그와 임프린트 레지스트와의 세트
KR102350286B1 (ko) * 2017-05-15 2022-01-14 캐논 가부시끼가이샤 드롭 레시피를 결정하는 결정 방법, 임프린트 장치 및 물품 제조 방법
TWI646389B (zh) 2017-09-12 2019-01-01 友達光電股份有限公司 壓印模具以及壓印模具製造方法
KR102666843B1 (ko) * 2018-08-31 2024-05-21 삼성디스플레이 주식회사 나노 임프린트용 스탬프 및 이의 제조 방법
CN109188863B (zh) * 2018-11-05 2021-11-26 京东方科技集团股份有限公司 膜层图案化的方法
CN110764364B (zh) * 2019-11-01 2021-05-25 京东方科技集团股份有限公司 一种纳米图案的制作方法、纳米压印基板、显示基板
JP7619015B2 (ja) * 2020-11-18 2025-01-22 大日本印刷株式会社 インプリント装置、インプリント方法及び凹凸構造体の製造方法

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JP4002154B2 (ja) * 2002-08-13 2007-10-31 東芝松下ディスプレイテクノロジー株式会社 液晶表示素子の製造方法およびその装置
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US7435074B2 (en) * 2004-03-13 2008-10-14 International Business Machines Corporation Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning
US7241395B2 (en) * 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
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JP4736821B2 (ja) * 2006-01-24 2011-07-27 株式会社日立製作所 パターン形成方法およびパターン形成装置
JP4861044B2 (ja) 2006-04-18 2012-01-25 キヤノン株式会社 基板の加工方法、パターン領域を有する部材の製造方法
KR20070105040A (ko) * 2006-04-25 2007-10-30 엘지.필립스 엘시디 주식회사 레지스트 조성물, 이를 이용한 레지스트 패턴 형성방법 및이를 이용하여 제조된 어레이 기판

Also Published As

Publication number Publication date
US8361336B2 (en) 2013-01-29
EP2176709A1 (en) 2010-04-21
KR20100047268A (ko) 2010-05-07
US20110042352A1 (en) 2011-02-24
WO2009020196A1 (en) 2009-02-12
EP2176709B1 (en) 2012-07-18
CN101765809A (zh) 2010-06-30
JP2009060084A (ja) 2009-03-19
CN101765809B (zh) 2012-05-16
KR101155200B1 (ko) 2012-06-13

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