JP5454558B2 - 結晶製造方法 - Google Patents
結晶製造方法 Download PDFInfo
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- JP5454558B2 JP5454558B2 JP2011258472A JP2011258472A JP5454558B2 JP 5454558 B2 JP5454558 B2 JP 5454558B2 JP 2011258472 A JP2011258472 A JP 2011258472A JP 2011258472 A JP2011258472 A JP 2011258472A JP 5454558 B2 JP5454558 B2 JP 5454558B2
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- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 56
- 239000012298 atmosphere Substances 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 229910052783 alkali metal Inorganic materials 0.000 claims description 8
- 150000001340 alkali metals Chemical class 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 75
- 229910002601 GaN Inorganic materials 0.000 description 72
- 239000007789 gas Substances 0.000 description 70
- 229910001873 dinitrogen Inorganic materials 0.000 description 47
- 239000002994 raw material Substances 0.000 description 39
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- 238000000034 method Methods 0.000 description 15
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- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
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- 239000001301 oxygen Substances 0.000 description 6
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- 230000008569 process Effects 0.000 description 6
- 102100039497 Choline transporter-like protein 3 Human genes 0.000 description 5
- 101000889279 Homo sapiens Choline transporter-like protein 3 Proteins 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 108091058543 REG3 Proteins 0.000 description 4
- 102100027336 Regenerating islet-derived protein 3-alpha Human genes 0.000 description 4
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- 101100120298 Rattus norvegicus Flot1 gene Proteins 0.000 description 3
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- 238000003776 cleavage reaction Methods 0.000 description 3
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- 229910052708 sodium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 102100023882 Endoribonuclease ZC3H12A Human genes 0.000 description 1
- 101710112715 Endoribonuclease ZC3H12A Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
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- 125000002524 organometallic group Chemical group 0.000 description 1
- QGVYYLZOAMMKAH-UHFFFAOYSA-N pegnivacogin Chemical compound COCCOC(=O)NCCCCC(NC(=O)OCCOC)C(=O)NCCCCCCOP(=O)(O)O QGVYYLZOAMMKAH-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- 238000000746 purification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
本発明の第1の実施形態を図1〜図11(B)を用いて説明する。図1には、本発明の第1の実施形態に係る結晶製造装置100の概略構成が示されている。
上記構成の結晶製造装置100を用いたGaN結晶の製造方法を図5〜図11(B)を用いて説明する。図5は、坩堝10及びGaN結晶6の温度変化を示すタイミングチャートである。なお、図5において、太線k1は坩堝10の温度変化を示し、細線k2及びk3は、いずれもGaN結晶6の温度変化(CaseAとCaseB)を示している。また、図10のフローチャートは、作業者によって行われる作業(操作)を示している。
本発明の第2の実施形態を図12〜図14を用いて説明する。図12には、本発明の第2の実施形態に係る結晶製造装置100Aの概略構成が示されている。
上記構成の結晶製造装置100Aを用いたGaN結晶の製造方法を図14を用いて説明する。図14のフローチャートは、作業者によって行われる処理あるいは動作を示している。図14のフローチャートは、上記第1の実施形態におけるステップS1〜ステップS3を、ステップS21〜ステップS23に変更し、ステップS12〜ステップS14を、ステップS24〜ステップS27に変更したものである。
本発明の第3の実施形態を図16〜図20を用いて説明する。図16には、本発明の第3の実施形態に係る結晶製造装置100Cの概略構成が示されている。
(3−1)密閉容器3000に設けられている手袋を利用して、密閉容器3000内で、ボルト1007Cをすべて外す。
本発明の第4の実施形態を図21を用いて説明する。図21には、本発明の第4の実施形態に係る結晶製造システムの概略構成が示されている。
Claims (4)
- III族窒化物結晶を製造する結晶製造方法であって、
坩堝が収容された反応容器を外部容器内の一の位置に位置させ、前記外部容器内の雰囲気を変化させることなく、前記坩堝内にアルカリ金属及びIII族金属を投入する工程と、
前記反応容器を前記外部容器内の他の位置に位置させ、前記反応容器を介して前記坩堝を加熱する工程と、
前記反応容器を前記一の位置に位置させ、前記外部容器内の雰囲気を変化させることなく、前記坩堝内で製造されたIII族窒化物結晶の取り出しを行う工程と、を含む結晶製造方法。 - 前記外部容器内の雰囲気は窒素または不活性ガスであることを特徴とする請求項1に記載の結晶製造方法。
- 前記外部容器内の圧力は大気圧よりも高いことを特徴とする請求項1又は2に記載の結晶製造方法。
- 前記反応容器は、前記坩堝を加熱するための加熱装置と一体的に設けられていることを特徴とする請求項1〜3のいずれか一項に記載の結晶製造方法。
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JP5200972B2 (ja) * | 2009-02-04 | 2013-06-05 | 株式会社Ihi | 基板製造装置 |
CN105189833A (zh) * | 2013-03-13 | 2015-12-23 | 先进可再生能源有限公司 | 使用用于石墨热区的部件的锅炉 |
KR101338625B1 (ko) * | 2013-03-28 | 2013-12-06 | 고광식 | 하폐수 슬러지를 이용한 세라믹블록의 제조방법 |
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JP2002068896A (ja) * | 2000-08-30 | 2002-03-08 | Kobe Steel Ltd | 窒化物単結晶製造方法及び製造装置 |
JP4323845B2 (ja) * | 2003-03-28 | 2009-09-02 | 住友電気工業株式会社 | Iii−v族化合物結晶の製造方法 |
JP2005263512A (ja) * | 2004-03-16 | 2005-09-29 | Ricoh Co Ltd | Iii族窒化物の結晶成長装置 |
JP4358033B2 (ja) * | 2004-05-25 | 2009-11-04 | パナソニック電工株式会社 | 結晶育成装置 |
JP4522836B2 (ja) * | 2004-12-08 | 2010-08-11 | 株式会社リコー | Iii族窒化物結晶製造方法及びiii族窒化物結晶成長装置 |
JP4878794B2 (ja) * | 2005-08-10 | 2012-02-15 | 株式会社リコー | 結晶成長装置および製造方法 |
JP4690850B2 (ja) * | 2005-10-14 | 2011-06-01 | 株式会社リコー | 結晶成長装置および製造方法 |
JP4631071B2 (ja) * | 2005-10-26 | 2011-02-16 | 株式会社リコー | 窒化ガリウム結晶の結晶成長装置および窒化ガリウム結晶の製造方法 |
JP2007246303A (ja) * | 2006-03-14 | 2007-09-27 | Ricoh Co Ltd | Iii族窒化物結晶およびその製造方法 |
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JP2012072060A (ja) | 2012-04-12 |
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