JP5440438B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JP5440438B2 JP5440438B2 JP2010175372A JP2010175372A JP5440438B2 JP 5440438 B2 JP5440438 B2 JP 5440438B2 JP 2010175372 A JP2010175372 A JP 2010175372A JP 2010175372 A JP2010175372 A JP 2010175372A JP 5440438 B2 JP5440438 B2 JP 5440438B2
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- power module
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- 230000003071 parasitic effect Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000000052 comparative effect Effects 0.000 description 18
- 230000005855 radiation Effects 0.000 description 9
- 238000004088 simulation Methods 0.000 description 7
- 238000011084 recovery Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Inverter Devices (AREA)
- Electronic Switches (AREA)
Description
図1は、3相インバータを示す回路図である。U相アームにおいて、P端子とU端子の間にトランジスタQ1とダイオードD1〜D4が並列接続され、U端子とN端子の間にトランジスタQ2とダイオードD5〜D8が並列接続されている。V相アームにおいて、P端子とV端子の間にトランジスタQ3とダイオードD9〜D12が並列接続され、V端子とN端子の間にトランジスタQ4とダイオードD13〜D16が並列接続されている。W相アームにおいて、P端子とW端子の間にトランジスタQ5とダイオードD17〜D20が並列接続され、W端子とN端子の間にトランジスタ6とダイオードD21〜D24が並列接続されている。P端子とU端子の間にインダクタンス負荷(L負荷)が接続されている。トランジスタQ1〜Q6はIGBTであるが、MOSFET等でもよい。
図10は実施の形態2に係るパワーモジュールを示す上面図であり、図11は図10のA−A´に沿った断面図である。実施の形態1とは異なり、AlワイヤL1〜L4の長さが同じになるようにダイオードD1〜D4が一列に配置されているため、AlワイヤL1〜L4の寄生インダクタンスは同じである。ただし、ダイオードD1,D3のスイッチング特性(リカバリ特性)とダイオードD2,D4のスイッチング特性が異なる。
図16は実施の形態3に係るパワーモジュールを示す上面図であり、図17は図16のA−A´に沿った断面図である。ダイオードD1〜D4の配置は実施の形態1と同じであるが、AlワイヤL1〜L4,L9〜L12,L25,L26の代わりに1枚の金属板22を用いている。金属板22とダイオードD1〜D4ははんだ24等で接合されている。
図18は実施の形態4に係るパワーモジュールを示す上面図であり、図19は図18のA−A´に沿った断面図である。ダイオードD1〜D4の配置は実施の形態2と同じであるが、AlワイヤL1〜L4,L9〜L12,L25,L26の代わりに1枚の金属板22を用いている。この場合でも、実施の形態3と同様に放射ノイズを低減することができる。
図20は実施の形態5に係るパワーモジュールを示す上面図であり、図21は図20のA−A´に沿った断面図である。AlワイヤL1は、ダイオードD1のアノード電極18をU端子に接続する。AlワイヤL25は、ダイオードD1のアノード電極18をダイオードD2のアノード電極18に接続する。AlワイヤL1,L25が、ダイオードD2のアノード電極18をU端子に接続する。AlワイヤL3は、ダイオードD3のアノード電極18をU端子に接続する。AlワイヤL26は、ダイオードD1のアノード電極18をダイオードD4のアノード電極18に接続する。AlワイヤL3,L26が、ダイオードD4のアノード電極18をU端子に接続する。これにより、隣接するダイオード間(D1〜D2間,D3〜D4間)のインダクタンスが低減し、ダイオードD1〜D4間の高周波振動周波数が更に高域に遷移するため、放射ノイズを更に低減することができる。
12 導電板(第2の端子)
18 アノード電極(第1の電極)
14 カソード電極(第2の電極)
22 金属板
D1,D3,D5,D7 ダイオード(第1のスイッチング素子)
D2,D4,D6,D8 ダイオード(第2のスイッチング素子)
L1,L3,L5,L7 Alワイヤ(第1の配線、第1のワイヤ)
L2,L4,L6,L8 Alワイヤ(第2の配線)
L25,L26,L27,L28 Alワイヤ(第3の配線、第2のワイヤ)
U端子、N端子(第1の端子)
Claims (4)
- 第1及び第2の端子と、
第1の電極と、前記第2の端子に接続された第2の電極とを持つ第1及び第2のスイッチング素子と、
前記第1及び第2のスイッチング素子の前記第1の電極を前記第1の端子にそれぞれ接続する第1及び第2の配線と、
前記第1のスイッチング素子の前記第1の電極を前記第2のスイッチング素子の前記第1の電極に直接に接続する第3の配線とを備え、
前第1及び第2の配線の寄生インダクタンスが異なるか、又は、前記第1及び第2のスイッチング素子のスイッチング特性が異なり、
前記第1、第2及び第3の配線は1枚の金属板であることを特徴とするパワーモジュール。 - 前記第3の配線の寄生インダクタンスは、前記第1及び第2の配線の寄生インダクタンスよりも小さいことを特徴とする請求項1に記載のパワーモジュール。
- 前記第3の配線の抵抗値は、前記第1及び第2の配線の抵抗値よりも大きいことを特徴とする請求項1又は2に記載のパワーモジュール。
- 前記第1及び第2のスイッチング素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜3の何れか1項に記載のパワーモジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010175372A JP5440438B2 (ja) | 2010-08-04 | 2010-08-04 | パワーモジュール |
US13/097,389 US8421163B2 (en) | 2010-08-04 | 2011-04-29 | Power module |
CN201110220746.XA CN102377330B (zh) | 2010-08-04 | 2011-08-03 | 功率模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010175372A JP5440438B2 (ja) | 2010-08-04 | 2010-08-04 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2012038803A JP2012038803A (ja) | 2012-02-23 |
JP5440438B2 true JP5440438B2 (ja) | 2014-03-12 |
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ID=45555709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010175372A Active JP5440438B2 (ja) | 2010-08-04 | 2010-08-04 | パワーモジュール |
Country Status (3)
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US (1) | US8421163B2 (ja) |
JP (1) | JP5440438B2 (ja) |
CN (1) | CN102377330B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104704736B (zh) * | 2012-09-28 | 2018-11-23 | 株式会社日立制作所 | 半导体器件和使用它的电力转换装置 |
US9231565B2 (en) | 2013-05-14 | 2016-01-05 | Infineon Technologies Austria Ag | Circuit with a plurality of bipolar transistors and method for controlling such a circuit |
US8917135B2 (en) * | 2013-05-14 | 2014-12-23 | Infineon Technologies Austria Ag | Circuit with a plurality of diodes and method for controlling such a circuit |
JP6328002B2 (ja) | 2013-09-20 | 2018-05-23 | 株式会社東芝 | 電力変換装置 |
DE112020003931T5 (de) | 2019-08-21 | 2022-05-25 | Rohm Co., Ltd. | Leistungsmodul |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04199567A (ja) | 1990-11-29 | 1992-07-20 | Toshiba Corp | 半導体スイッチ |
JPH07273276A (ja) | 1994-03-28 | 1995-10-20 | Nissan Motor Co Ltd | パワー素子とスナバ素子の接続構造及びその実装構造 |
JP3269745B2 (ja) | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | モジュール型半導体装置 |
JP3521651B2 (ja) | 1996-10-18 | 2004-04-19 | 株式会社日立製作所 | パワー半導体装置 |
EP1143604B1 (en) * | 1999-06-29 | 2007-09-26 | Mitsubishi Denki Kabushiki Kaisha | Power conversion device |
JP3525823B2 (ja) | 1999-09-13 | 2004-05-10 | 株式会社日立製作所 | 相補型igbtの実装構造 |
JP2002033446A (ja) | 2000-05-10 | 2002-01-31 | Nissan Motor Co Ltd | 半導体装置 |
US20020024134A1 (en) * | 2000-08-28 | 2002-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JP2002141465A (ja) * | 2000-10-31 | 2002-05-17 | Toshiba Corp | 電力用半導体モジュール |
DE10159851B4 (de) * | 2001-12-06 | 2006-05-24 | Infineon Technologies Ag | Halbleiterbauelementanordnung mit verminderter Oszillationsneigung |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP4142539B2 (ja) * | 2003-09-25 | 2008-09-03 | 三菱電機株式会社 | 電力用半導体装置 |
JP4547231B2 (ja) * | 2004-10-22 | 2010-09-22 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP4815933B2 (ja) | 2005-08-02 | 2011-11-16 | 富士電機株式会社 | 半導体パワーモジュール。 |
-
2010
- 2010-08-04 JP JP2010175372A patent/JP5440438B2/ja active Active
-
2011
- 2011-04-29 US US13/097,389 patent/US8421163B2/en active Active
- 2011-08-03 CN CN201110220746.XA patent/CN102377330B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8421163B2 (en) | 2013-04-16 |
JP2012038803A (ja) | 2012-02-23 |
CN102377330A (zh) | 2012-03-14 |
US20120032725A1 (en) | 2012-02-09 |
CN102377330B (zh) | 2015-06-03 |
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