JP5430113B2 - 電界効果型トランジスタ及びその製造方法 - Google Patents

電界効果型トランジスタ及びその製造方法 Download PDF

Info

Publication number
JP5430113B2
JP5430113B2 JP2008261878A JP2008261878A JP5430113B2 JP 5430113 B2 JP5430113 B2 JP 5430113B2 JP 2008261878 A JP2008261878 A JP 2008261878A JP 2008261878 A JP2008261878 A JP 2008261878A JP 5430113 B2 JP5430113 B2 JP 5430113B2
Authority
JP
Japan
Prior art keywords
oxynitride
electrode
film
channel
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008261878A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010093070A (ja
JP2010093070A5 (cg-RX-API-DMAC7.html
Inventor
達哉 岩崎
奈穂 板垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008261878A priority Critical patent/JP5430113B2/ja
Priority to CN2009102044658A priority patent/CN101719514B/zh
Priority to US12/573,381 priority patent/US8164090B2/en
Priority to KR1020090094184A priority patent/KR101224943B1/ko
Priority to AT09012657T priority patent/ATE555503T1/de
Priority to EP09012657A priority patent/EP2175493B1/en
Publication of JP2010093070A publication Critical patent/JP2010093070A/ja
Publication of JP2010093070A5 publication Critical patent/JP2010093070A5/ja
Application granted granted Critical
Publication of JP5430113B2 publication Critical patent/JP5430113B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008261878A 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP5430113B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法
CN2009102044658A CN101719514B (zh) 2008-10-08 2009-09-29 场效应晶体管及其制造工艺
KR1020090094184A KR101224943B1 (ko) 2008-10-08 2009-10-05 전계효과형 트랜지스터 및 그 제조방법
US12/573,381 US8164090B2 (en) 2008-10-08 2009-10-05 Field effect transistor and process for production thereof
AT09012657T ATE555503T1 (de) 2008-10-08 2009-10-06 Feldeffekttransistor und verfahren zu seiner herstellung
EP09012657A EP2175493B1 (en) 2008-10-08 2009-10-06 Field effect transistor and process for production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008261878A JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2010093070A JP2010093070A (ja) 2010-04-22
JP2010093070A5 JP2010093070A5 (cg-RX-API-DMAC7.html) 2011-11-24
JP5430113B2 true JP5430113B2 (ja) 2014-02-26

Family

ID=41445710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008261878A Expired - Fee Related JP5430113B2 (ja) 2008-10-08 2008-10-08 電界効果型トランジスタ及びその製造方法

Country Status (6)

Country Link
US (1) US8164090B2 (cg-RX-API-DMAC7.html)
EP (1) EP2175493B1 (cg-RX-API-DMAC7.html)
JP (1) JP5430113B2 (cg-RX-API-DMAC7.html)
KR (1) KR101224943B1 (cg-RX-API-DMAC7.html)
CN (1) CN101719514B (cg-RX-API-DMAC7.html)
AT (1) ATE555503T1 (cg-RX-API-DMAC7.html)

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704217B2 (en) * 2008-01-17 2014-04-22 Idemitsu Kosan Co., Ltd. Field effect transistor, semiconductor device and semiconductor device manufacturing method
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
KR101895080B1 (ko) 2009-11-28 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101749944B1 (ko) * 2009-12-28 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
CN113540253A (zh) * 2010-02-26 2021-10-22 株式会社半导体能源研究所 制造半导体装置的方法
KR20130045418A (ko) 2010-04-23 2013-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9336739B2 (en) * 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5917035B2 (ja) * 2010-07-26 2016-05-11 株式会社半導体エネルギー研究所 半導体装置
KR101145916B1 (ko) * 2010-09-15 2012-05-15 경희대학교 산학협력단 플렉시블 다층 투명 전극의 제조 방법
US8546892B2 (en) * 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN102468162B (zh) * 2010-10-29 2014-03-12 中芯国际集成电路制造(北京)有限公司 Nmos晶体管的制作方法
TWI555205B (zh) * 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US8569754B2 (en) * 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8629496B2 (en) * 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8816425B2 (en) * 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
EP2660869B1 (en) * 2010-12-27 2020-10-21 Sharp Kabushiki Kaisha Semiconductor device
US9048142B2 (en) * 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012090974A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5784479B2 (ja) 2010-12-28 2015-09-24 株式会社半導体エネルギー研究所 半導体装置
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5975635B2 (ja) * 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012090973A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101800888B1 (ko) * 2010-12-29 2017-11-24 엘지디스플레이 주식회사 산화물 반도체를 포함한 박막 트랜지스터 기판
TWI416737B (zh) * 2010-12-30 2013-11-21 Au Optronics Corp 薄膜電晶體及其製造方法
TWI535032B (zh) * 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8575678B2 (en) * 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
TWI866652B (zh) * 2011-01-26 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
DE112012000601T5 (de) * 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012128030A1 (en) * 2011-03-18 2012-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
TWI545652B (zh) * 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) * 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
TWI532822B (zh) 2011-04-29 2016-05-11 半導體能源研究所股份有限公司 利用磷光之發光裝置，電子裝置及照明裝置
WO2012147896A1 (en) 2011-04-29 2012-11-01 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6009226B2 (ja) * 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6104522B2 (ja) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 半導体装置
US9001564B2 (en) * 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643008B2 (en) * 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) * 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2013054823A1 (en) * 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130046357A (ko) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130055521A (ko) * 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
US9076871B2 (en) * 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013147490A (ja) 2011-12-23 2013-08-01 Semiconductor Energy Lab Co Ltd イリジウム錯体、発光素子、発光装置、電子機器、及び照明装置
TWI569446B (zh) * 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
JP6053490B2 (ja) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6088142B2 (ja) * 2012-01-18 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220526B2 (ja) * 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6100071B2 (ja) * 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6117618B2 (ja) 2012-06-01 2017-04-19 株式会社半導体エネルギー研究所 有機金属錯体、発光素子、発光装置、電子機器、及び照明装置
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014027263A (ja) 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
DE112013003841T5 (de) * 2012-08-03 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI657539B (zh) 2012-08-31 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置
KR102679509B1 (ko) 2012-09-13 2024-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102680781B1 (ko) 2012-12-25 2024-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6217196B2 (ja) * 2013-07-11 2017-10-25 三菱電機株式会社 半導体材料、薄膜トランジスタ、および薄膜トランジスタの製造方法
JP2015065202A (ja) * 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
CN103500710B (zh) * 2013-10-11 2015-11-25 京东方科技集团股份有限公司 一种薄膜晶体管制作方法、薄膜晶体管及显示设备
KR102227637B1 (ko) 2013-11-07 2021-03-16 삼성디스플레이 주식회사 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법
JP2016027597A (ja) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
KR102704745B1 (ko) 2013-12-27 2024-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103715267A (zh) * 2013-12-30 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管、tft阵列基板及其制造方法和显示装置
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2015162633A (ja) * 2014-02-28 2015-09-07 株式会社東芝 半導体装置
JP6585354B2 (ja) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
CN104167448B (zh) * 2014-08-05 2017-06-30 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示装置
US20160225915A1 (en) * 2015-01-30 2016-08-04 Cindy X. Qiu Metal oxynitride transistor devices
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6697299B2 (ja) 2015-04-01 2020-05-20 株式会社半導体エネルギー研究所 有機金属錯体、発光素子、発光装置、電子機器、および照明装置
CN105161523B (zh) * 2015-08-13 2018-09-25 京东方科技集团股份有限公司 一种电极、薄膜晶体管、阵列基板及显示设备
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105977304B (zh) * 2016-05-31 2019-01-11 京东方科技集团股份有限公司 晶体管、其制造方法、阵列基板、显示面板及显示装置
JP6411556B2 (ja) * 2017-02-03 2018-10-24 株式会社半導体エネルギー研究所 半導体メモリ装置
CN107731929B (zh) * 2017-09-28 2019-12-13 信利（惠州）智能显示有限公司 薄膜晶体管的制作方法
JP6896020B2 (ja) * 2017-11-14 2021-06-30 株式会社半導体エネルギー研究所 半導体装置
CN110137355B (zh) * 2019-05-15 2021-05-25 华东师范大学 一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法
JP7209043B2 (ja) * 2019-06-12 2023-01-19 株式会社半導体エネルギー研究所 半導体装置
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN114152857A (zh) * 2021-12-07 2022-03-08 华东师范大学 一种二维材料场效应晶体管失效样品的制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3423896B2 (ja) * 1999-03-25 2003-07-07 科学技術振興事業団 半導体デバイス
JP2003060576A (ja) 2001-08-22 2003-02-28 Nec Corp 偏波スクランブラユニット及びこれを用いた多中継伝送システム
TWI221340B (en) 2003-05-30 2004-09-21 Ind Tech Res Inst Thin film transistor and method for fabricating thereof
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
EP2455975B1 (en) 2004-11-10 2015-10-28 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
KR101152128B1 (ko) * 2005-07-04 2012-07-02 삼성전자주식회사 액정 표시 장치 및 그 구동 방법
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
EP1998375A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method
KR101050767B1 (ko) 2005-11-15 2011-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP5250929B2 (ja) 2005-11-30 2013-07-31 凸版印刷株式会社 トランジスタおよびその製造方法
JP2007220818A (ja) * 2006-02-15 2007-08-30 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタ及びその製法
JP2007250982A (ja) 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
JP5016831B2 (ja) 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
JP2008112909A (ja) 2006-10-31 2008-05-15 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP2008276212A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体

Also Published As

Publication number Publication date
US20100084655A1 (en) 2010-04-08
CN101719514B (zh) 2012-06-27
KR20100039806A (ko) 2010-04-16
JP2010093070A (ja) 2010-04-22
ATE555503T1 (de) 2012-05-15
KR101224943B1 (ko) 2013-01-22
US8164090B2 (en) 2012-04-24
CN101719514A (zh) 2010-06-02
EP2175493A1 (en) 2010-04-14
EP2175493B1 (en) 2012-04-25

Similar Documents

Publication Publication Date Title
JP5430113B2 (ja) 電界効果型トランジスタ及びその製造方法
EP1984954B1 (en) Field effect transistor using oxide film for channel and method of manufacturing the same
CN101258607B (zh) 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
KR101194255B1 (ko) 아모르포스 산화물 반도체 및 그 아모르포스 산화물 반도체를 사용한 박막트랜지스터
CN101375405B (zh) 场效应晶体管
CN102496577B (zh) 非晶氧化物膜的制造方法
US8742412B2 (en) Thin film transistor using an oxide semiconductor and display
JP4332545B2 (ja) 電界効果型トランジスタ及びその製造方法
TWI405334B (zh) 場效電晶體
Wang Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20110112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111007

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111007

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131007

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131105

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131203

R151 Written notification of patent or utility model registration

Ref document number: 5430113

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees