JP5419525B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5419525B2 JP5419525B2 JP2009092014A JP2009092014A JP5419525B2 JP 5419525 B2 JP5419525 B2 JP 5419525B2 JP 2009092014 A JP2009092014 A JP 2009092014A JP 2009092014 A JP2009092014 A JP 2009092014A JP 5419525 B2 JP5419525 B2 JP 5419525B2
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- semiconductor substrate
- barrier metal
- metal pattern
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- 239000004065 semiconductor Substances 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000010410 layer Substances 0.000 claims description 299
- 239000000758 substrate Substances 0.000 claims description 157
- 230000004888 barrier function Effects 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000012535 impurity Substances 0.000 claims description 47
- 239000010949 copper Substances 0.000 claims description 46
- 238000009792 diffusion process Methods 0.000 claims description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 26
- 238000007747 plating Methods 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 137
- 229910052710 silicon Inorganic materials 0.000 description 135
- 239000010703 silicon Substances 0.000 description 135
- 239000010408 film Substances 0.000 description 29
- 239000011229 interlayer Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Images
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009092014A JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
| US12/752,736 US8598684B2 (en) | 2009-04-06 | 2010-04-01 | Semiconductor device, and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009092014A JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010245263A JP2010245263A (ja) | 2010-10-28 |
| JP2010245263A5 JP2010245263A5 (enrdf_load_stackoverflow) | 2012-04-05 |
| JP5419525B2 true JP5419525B2 (ja) | 2014-02-19 |
Family
ID=43097963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009092014A Active JP5419525B2 (ja) | 2009-04-06 | 2009-04-06 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5419525B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012090292A1 (ja) * | 2010-12-28 | 2012-07-05 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR101278442B1 (ko) | 2012-01-19 | 2013-07-01 | 한국과학기술원 | 관통 실리콘 비아를 이용한 수동 이퀄라이저를 구비하는 인터포저, 그 제조 방법, 인터포저를 포함하는 적층 칩 패키지, 및 그 제조 방법 |
| JP2015153978A (ja) * | 2014-02-18 | 2015-08-24 | キヤノン株式会社 | 貫通配線の作製方法 |
| JP6611703B2 (ja) * | 2014-03-12 | 2019-11-27 | 株式会社ＴｈｒｕＣｈｉｐ Ｊａｐａｎ | 積層半導体集積回路装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131648B2 (ja) * | 2002-07-10 | 2008-08-13 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP4327644B2 (ja) * | 2004-03-31 | 2009-09-09 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006278646A (ja) * | 2005-03-29 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP5394617B2 (ja) * | 2006-06-16 | 2014-01-22 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法及び基板 |
-
2009
- 2009-04-06 JP JP2009092014A patent/JP5419525B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2010245263A (ja) | 2010-10-28 |
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