JP5403262B2 - 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法 - Google Patents

化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法 Download PDF

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Publication number
JP5403262B2
JP5403262B2 JP2009506244A JP2009506244A JP5403262B2 JP 5403262 B2 JP5403262 B2 JP 5403262B2 JP 2009506244 A JP2009506244 A JP 2009506244A JP 2009506244 A JP2009506244 A JP 2009506244A JP 5403262 B2 JP5403262 B2 JP 5403262B2
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chemical mechanical
mechanical polishing
aqueous dispersion
silicon nitride
nitride film
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JPWO2008117592A1 (ja
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太一 松本
富和 植野
民智明 安藤
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JSR Corp
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JSR Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009506244A 2007-03-26 2008-02-20 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法 Active JP5403262B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009506244A JP5403262B2 (ja) 2007-03-26 2008-02-20 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007078748 2007-03-26
JP2007078748 2007-03-26
PCT/JP2008/052803 WO2008117592A1 (ja) 2007-03-26 2008-02-20 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法
JP2009506244A JP5403262B2 (ja) 2007-03-26 2008-02-20 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法

Publications (2)

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JPWO2008117592A1 JPWO2008117592A1 (ja) 2010-07-15
JP5403262B2 true JP5403262B2 (ja) 2014-01-29

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US (1) US8349207B2 (de)
EP (2) EP2131389A4 (de)
JP (1) JP5403262B2 (de)
KR (1) KR101431299B1 (de)
TW (1) TWI438251B (de)
WO (1) WO2008117592A1 (de)

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JP5240478B2 (ja) * 2008-02-18 2013-07-17 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
WO2009107472A1 (ja) * 2008-02-27 2009-09-03 Jsr株式会社 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の再生方法
JP5472585B2 (ja) 2008-05-22 2014-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
KR101588485B1 (ko) * 2008-09-19 2016-01-25 미츠비시 가스 가가쿠 가부시키가이샤 구리 배선 표면 보호액 및 반도체 회로의 제조 방법
US9054025B2 (en) * 2008-11-03 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Process for controlling shallow trench isolation step height
KR101285948B1 (ko) * 2009-07-21 2013-07-12 한양대학교 산학협력단 멀티 선택비를 갖는 연마 슬러리 조성물 및 이를 사용한 반도체 소자 제조방법
JP5601922B2 (ja) * 2010-07-29 2014-10-08 富士フイルム株式会社 研磨液及び研磨方法
JP5965907B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
SG11201606187RA (en) * 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
JP2012146972A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
KR101340551B1 (ko) * 2010-12-31 2013-12-11 제일모직주식회사 질화규소를 선택적으로 연마하는 ｃｍｐ 슬러리 조성물
JP6357296B2 (ja) * 2012-02-10 2018-07-11 株式会社フジミインコーポレーテッド 研磨用組成物、及び半導体基板の製造方法
WO2014119301A1 (ja) * 2013-02-01 2014-08-07 株式会社フジミインコーポレーテッド 表面選択性研磨組成物
JP6387634B2 (ja) * 2014-03-17 2018-09-12 日立化成株式会社 研磨方法及びｃｍｐ研磨液
US10507563B2 (en) 2015-04-22 2019-12-17 Jsr Corporation Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR102626655B1 (ko) * 2017-02-08 2024-01-17 제이에스알 가부시끼가이샤 반도체 처리용 조성물 및 처리 방법
US20190189631A1 (en) * 2017-12-15 2019-06-20 Soulbrain Co., Ltd. Composition for etching and manufacturing method of semiconductor device using the same
KR102723152B1 (ko) * 2018-03-23 2024-10-29 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
KR20200102492A (ko) * 2018-03-23 2020-08-31 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
JP7002635B2 (ja) * 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
EP3959291A4 (de) * 2019-03-11 2023-07-19 Versum Materials US, LLC Ätzlösung und verfahren für aluminiumnitrid

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JPH06124932A (ja) * 1992-10-12 1994-05-06 Toshiba Corp 研磨方法
JPH11176773A (ja) * 1997-12-12 1999-07-02 Toshiba Corp 研磨方法
JP2002313758A (ja) * 2001-04-18 2002-10-25 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2004214667A (ja) * 2002-12-30 2004-07-29 Hynix Semiconductor Inc ナイトライド用ｃｍｐスラリー及びこれを利用したｃｍｐ方法
JP2004269577A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
JP2004311652A (ja) * 2003-04-04 2004-11-04 Rodel Nitta Co 研磨用スラリー
JP2005082649A (ja) * 2003-09-05 2005-03-31 Nitta Haas Inc 研磨用スラリー
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DE602006002900D1 (de) 2005-03-09 2008-11-13 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren
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JP5013732B2 (ja) 2006-04-03 2012-08-29 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法、化学機械研磨用キット、および化学機械研磨用水系分散体を調製するためのキット
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JPH06124932A (ja) * 1992-10-12 1994-05-06 Toshiba Corp 研磨方法
JPH11176773A (ja) * 1997-12-12 1999-07-02 Toshiba Corp 研磨方法
JP2002313758A (ja) * 2001-04-18 2002-10-25 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2004214667A (ja) * 2002-12-30 2004-07-29 Hynix Semiconductor Inc ナイトライド用ｃｍｐスラリー及びこれを利用したｃｍｐ方法
JP2004269577A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
JP2004311652A (ja) * 2003-04-04 2004-11-04 Rodel Nitta Co 研磨用スラリー
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Also Published As

Publication number Publication date
JPWO2008117592A1 (ja) 2010-07-15
TWI438251B (zh) 2014-05-21
US20100099260A1 (en) 2010-04-22
WO2008117592A1 (ja) 2008-10-02
TW200914559A (en) 2009-04-01
EP2437285A2 (de) 2012-04-04
EP2131389A4 (de) 2011-06-22
EP2131389A1 (de) 2009-12-09
US8349207B2 (en) 2013-01-08
KR101431299B1 (ko) 2014-08-20
KR20100015753A (ko) 2010-02-12

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