JP5395348B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5395348B2
JP5395348B2 JP2007300218A JP2007300218A JP5395348B2 JP 5395348 B2 JP5395348 B2 JP 5395348B2 JP 2007300218 A JP2007300218 A JP 2007300218A JP 2007300218 A JP2007300218 A JP 2007300218A JP 5395348 B2 JP5395348 B2 JP 5395348B2
Authority
JP
Japan
Prior art keywords
marker
substrate
film
laser
camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007300218A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008153638A5 (enExample
JP2008153638A (ja
Inventor
幸一郎 田中
貴嗣 小俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007300218A priority Critical patent/JP5395348B2/ja
Publication of JP2008153638A publication Critical patent/JP2008153638A/ja
Publication of JP2008153638A5 publication Critical patent/JP2008153638A5/ja
Application granted granted Critical
Publication of JP5395348B2 publication Critical patent/JP5395348B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Multimedia (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thin Film Transistor (AREA)
JP2007300218A 2006-11-24 2007-11-20 半導体装置の作製方法 Expired - Fee Related JP5395348B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007300218A JP5395348B2 (ja) 2006-11-24 2007-11-20 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006317496 2006-11-24
JP2006317496 2006-11-24
JP2007300218A JP5395348B2 (ja) 2006-11-24 2007-11-20 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008153638A JP2008153638A (ja) 2008-07-03
JP2008153638A5 JP2008153638A5 (enExample) 2010-10-21
JP5395348B2 true JP5395348B2 (ja) 2014-01-22

Family

ID=39462678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007300218A Expired - Fee Related JP5395348B2 (ja) 2006-11-24 2007-11-20 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8138058B2 (enExample)
JP (1) JP5395348B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809120B2 (en) 2011-02-17 2014-08-19 Infineon Technologies Ag Method of dicing a wafer
JP2012204485A (ja) * 2011-03-24 2012-10-22 Japan Steel Works Ltd:The レーザアニール装置
US10171734B2 (en) * 2012-02-27 2019-01-01 Ovio Technologies, Inc. Rotatable imaging system
KR20140017086A (ko) * 2012-07-30 2014-02-11 삼성디스플레이 주식회사 집적회로 및 이를 포함하는 표시 장치
US9040389B2 (en) 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
KR102227637B1 (ko) * 2013-11-07 2021-03-16 삼성디스플레이 주식회사 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법
CN106374335A (zh) * 2016-10-31 2017-02-01 中国科学院上海光学精密机械研究所 集成电极电光调谐回音壁模式微腔的制备方法
FR3073839B1 (fr) * 2017-11-23 2019-11-15 Saint-Gobain Glass France Systeme d’alignement d’un dispositif de traitement thermique et son fonctionnement
JP7018338B2 (ja) * 2018-03-19 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN208795984U (zh) * 2018-10-23 2019-04-26 北京京东方光电科技有限公司 电子墨水屏的显示基板和显示装置
CN109362024A (zh) * 2018-12-25 2019-02-19 深圳市宇道机电技术有限公司 扬声器振膜贴附设备
JP7384836B2 (ja) 2019-01-18 2023-11-21 株式会社半導体エネルギー研究所 表示装置、表示システム
CN112114435B (zh) * 2019-06-19 2022-10-21 武汉光谷航天三江激光产业技术研究院有限公司 用于红外仪器与激光仪器光轴调节的目标装置
EP3970899B1 (en) * 2020-09-18 2023-11-22 Laser Systems & Solutions of Europe Method of and system for uniformly irradiating a frame of a processed substrate having a plurality of frames
JP7071483B2 (ja) * 2020-12-04 2022-05-19 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
EP4270476A1 (en) * 2022-04-29 2023-11-01 Infineon Technologies Austria AG Semiconductor package and method for marking a semiconductor package
JP2024076171A (ja) * 2022-11-24 2024-06-05 三菱電機株式会社 半導体装置、真贋判定方法及び電力変換装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197816A (ja) * 1982-05-14 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 薄膜結晶の製造方法
JPH02260419A (ja) * 1989-03-30 1990-10-23 Matsushita Electric Ind Co Ltd レーザ照射方法
JPH04186725A (ja) * 1990-11-21 1992-07-03 Hitachi Ltd レーザアニール装置及びアライメント法
JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
JPH10163136A (ja) * 1996-12-04 1998-06-19 Unisia Jecs Corp シリコンウエハの加工方法
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
JPH11121517A (ja) * 1997-10-09 1999-04-30 Hitachi Ltd 半導体素子搭載装置および搭載方法
JP3356406B2 (ja) * 1999-03-24 2002-12-16 株式会社モリテックス 位置ずれ検出装置及びそれを用いた位置決め装置
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001148600A (ja) 1999-11-22 2001-05-29 Matsushita Electric Ind Co Ltd マーク認識方法及び位置合わせ装置
JP2001274086A (ja) * 2000-03-27 2001-10-05 Matsushita Electric Ind Co Ltd 多結晶シリコン薄膜の製造方法
WO2002071470A1 (fr) * 2001-03-02 2002-09-12 Toray Engineering Co., Ltd. Procede et dispositif de montage de puce
JP2002350800A (ja) 2001-05-30 2002-12-04 Matsushita Electric Ind Co Ltd 液晶パネルの製造方法
JP2003100653A (ja) * 2001-09-26 2003-04-04 Sharp Corp 加工装置および加工方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US6700096B2 (en) 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
JP3980465B2 (ja) 2001-11-09 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003224084A (ja) 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
EP1329946A3 (en) 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
DE10353901A1 (de) * 2002-11-25 2004-06-09 Advanced LCD Technologies Development Center Co., Ltd., Yokohama Verfahren und Vorrichtung zur Bildung eines Substrats für Halbleiter oder dergleichen
JP4515088B2 (ja) * 2002-12-25 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7223674B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Methods for forming backside alignment markers useable in semiconductor lithography
KR101248964B1 (ko) * 2005-03-29 2013-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 반도체 소자의 제조 방법
TWI498626B (zh) 2005-11-15 2015-09-01 Semiconductor Energy Lab 液晶顯示裝置
WO2007072744A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20080121819A1 (en) 2008-05-29
JP2008153638A (ja) 2008-07-03
US8138058B2 (en) 2012-03-20

Similar Documents

Publication Publication Date Title
JP5395348B2 (ja) 半導体装置の作製方法
US8525070B2 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
KR101299604B1 (ko) 반도체 장치 및 그 제조 방법
US8304313B2 (en) Semiconductor device and its manufacturing method
US7649698B2 (en) Laser light irradiation apparatus and laser light irradiation method
US7706078B2 (en) Laser light irradiation apparatus and laser light irradiation method
JP5383113B2 (ja) 半導体装置の作製方法
EP2275222A1 (en) Laser irradiation apparatuses and methods using a beam expander with two lenses, the position of the latter with respect to the laser oscillator governed by an equation
JP2007258691A (ja) レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法
US8835800B2 (en) Laser irradiation apparatus and method for manufacturing semiconductor device
US20070063226A1 (en) Laser irradiation apparatus and laser irradiation method
US20110318908A1 (en) Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
US8173977B2 (en) Laser irradiation apparatus and laser irradiation method
JP5388433B2 (ja) 半導体装置の作製方法
JP5352040B2 (ja) 半導体装置の作製方法
JP5227499B2 (ja) レーザ照射装置
JP5116232B2 (ja) レーザ照射装置およびレーザ照射方法
JP5089077B2 (ja) 半導体装置の作製方法
JP2006339630A (ja) レーザ照射装置、およびレーザ照射方法
JP2006066904A (ja) レーザ照射装置およびレーザ照射方法
JP2007194605A (ja) レーザ照射装置、及び半導体装置の作製方法
JP2006203189A (ja) 露光装置、およびこれを用いた半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100907

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121225

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130429

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131008

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131018

R150 Certificate of patent or registration of utility model

Ref document number: 5395348

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees