JP5395348B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5395348B2 JP5395348B2 JP2007300218A JP2007300218A JP5395348B2 JP 5395348 B2 JP5395348 B2 JP 5395348B2 JP 2007300218 A JP2007300218 A JP 2007300218A JP 2007300218 A JP2007300218 A JP 2007300218A JP 5395348 B2 JP5395348 B2 JP 5395348B2
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Description
本実施の形態では、本発明に係るマーカー付き基板について図1を参照して説明する。
本実施の形態では、実施の形態1で示したマーカー付き基板の所望の位置にレーザビームを照射し、基板表面の半導体膜を結晶化する工程について説明する。
本実施の形態では、実施の形態1で示したマーカー付き基板を、フォトリソグラフィー法を用いた露光工程に適用する場合を示す。
本実施の形態においては、図3に示したレーザ照射装置または図4に示した露光装置を用いて、薄膜トランジスタ(TFT)を作製する工程について説明する。なお、本実施の形態ではトップゲート型(順スタガ型)TFTの作製方法を記載しているが、トップゲート型TFTに限らず、ボトムゲート型(逆スタガ型)TFTなどでも同様に本発明を用いることができる。但し、本発明は多くの異なる態様で実施することが可能であり、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本実施の形態の記載内容に限定して解釈されるものではない。
本実施の形態では、薄膜集積回路または非接触型薄膜集積回路装置(無線チップ、無線ICタグ、RFID(無線認証、Radio Frequency Identification)とも呼ばれる)を図3のレーザ照射装置または図4の露光装置を用いて作製する過程を示す。但し、本発明は多くの異なる態様で実施することが可能であり、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本実施の形態の記載内容に限定して解釈されるものではない。
本発明により、基板上の所望の位置に精度良く光源からの光線を照射することができ、所望の位置を均一にアニールする、または所望の位置を正確にパターン化することができるため、半導体装置の生産性、集積度の向上が可能となる。本発明の半導体装置を用いることで電子機器をスループット良く、良好な品質で作製することが可能になる。その具体例を図14、図15を用いて説明する。但し、本発明は多くの異なる態様で実施することが可能であり、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本実施の形態の記載内容に限定して解釈されるものではない。
101 表面
102 裏面
103 窒化酸化珪素膜
104 酸化窒化珪素膜
105 半導体膜
106 マーカー形成膜
107 マーカー
108 マーカー
109 マーカー
110 マーカー
111 マーカー
120 マーカー
130 マーカー
Claims (1)
- 裏面に第1の開口部の縁からなるマーカーを有するマーカー形成膜を有し、且つ、表面に半導体層を有する基板を用意する第1の工程と、
前記半導体層の上方から赤外光を照射し、前記赤外光を前記マーカー形成膜で反射し、前記反射した前記赤外光を前記半導体層の上方に配置されたカメラで検知することによって、前記マーカーを検出して前記基板の位置合わせを行う第2の工程と、
前記位置合わせを行った後に、前記半導体層にレーザビームを照射し、前記半導体層を結晶化する第3の工程と、を有し、
前記第2の工程において、第2の開口部を有するステージの上方に前記基板が配置され、
前記第2の工程は、前記第1の開口部を前記第2の開口部と重ねた状態で行われることを特徴とする半導体装置の作製方法。
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JP2007300218A JP5395348B2 (ja) | 2006-11-24 | 2007-11-20 | 半導体装置の作製方法 |
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JP2007300218A JP5395348B2 (ja) | 2006-11-24 | 2007-11-20 | 半導体装置の作製方法 |
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JP2008153638A JP2008153638A (ja) | 2008-07-03 |
JP2008153638A5 JP2008153638A5 (ja) | 2010-10-21 |
JP5395348B2 true JP5395348B2 (ja) | 2014-01-22 |
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US8809120B2 (en) | 2011-02-17 | 2014-08-19 | Infineon Technologies Ag | Method of dicing a wafer |
JP2012204485A (ja) * | 2011-03-24 | 2012-10-22 | Japan Steel Works Ltd:The | レーザアニール装置 |
US10171734B2 (en) * | 2012-02-27 | 2019-01-01 | Ovio Technologies, Inc. | Rotatable imaging system |
KR20140017086A (ko) * | 2012-07-30 | 2014-02-11 | 삼성디스플레이 주식회사 | 집적회로 및 이를 포함하는 표시 장치 |
US9040389B2 (en) | 2012-10-09 | 2015-05-26 | Infineon Technologies Ag | Singulation processes |
KR102227637B1 (ko) * | 2013-11-07 | 2021-03-16 | 삼성디스플레이 주식회사 | 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법 |
CN106374335A (zh) * | 2016-10-31 | 2017-02-01 | 中国科学院上海光学精密机械研究所 | 集成电极电光调谐回音壁模式微腔的制备方法 |
FR3073839B1 (fr) * | 2017-11-23 | 2019-11-15 | Saint-Gobain Glass France | Systeme d’alignement d’un dispositif de traitement thermique et son fonctionnement |
JP7018338B2 (ja) * | 2018-03-19 | 2022-02-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
CN208795984U (zh) * | 2018-10-23 | 2019-04-26 | 北京京东方光电科技有限公司 | 电子墨水屏的显示基板和显示装置 |
CN109362024A (zh) * | 2018-12-25 | 2019-02-19 | 深圳市宇道机电技术有限公司 | 扬声器振膜贴附设备 |
WO2020148601A1 (ja) | 2019-01-18 | 2020-07-23 | 株式会社半導体エネルギー研究所 | 表示システム、表示装置、発光装置 |
CN112114435B (zh) * | 2019-06-19 | 2022-10-21 | 武汉光谷航天三江激光产业技术研究院有限公司 | 用于红外仪器与激光仪器光轴调节的目标装置 |
JP7071483B2 (ja) * | 2020-12-04 | 2022-05-19 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
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